NRVTS2H60ESFT1G
  • Share:

onsemi NRVTS2H60ESFT1G

Manufacturer No:
NRVTS2H60ESFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY SOD123
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NRVTS2H60ESFT1G is a trench-based Schottky rectifier produced by onsemi. This component is designed to offer very low forward voltage and low leakage, making it highly efficient for various applications. It features fine lithography trench-based Schottky technology, which ensures fast switching with exceptional temperature stability. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. It is also Pb-free, halogen-free/BFR-free, and RoHS compliant.

Key Specifications

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 60 V
Average Rectified Forward Current (TL = 125°C) IO 2.0 A
Peak Repetitive Forward Current (Square Wave, 20 kHz, TL = 139°C) IFRM 4.0 A
Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 50 A
Storage and Operating Junction Temperature Range Tstg, TJ -65 to +175 °C
Maximum Instantaneous Forward Voltage (IF = 1.0 A, TJ = 25°C) VF 0.55 V
Thermal Resistance, Junction-to-Ambient (Note 2) RθJA 85 °C/W
Case Molded Epoxy
Weight 11.7 mg (Approximately)
Lead and Mounting Surface Temperature for Soldering Purposes 260°C Maximum for 10 Seconds

Key Features

  • Fine lithography trench-based Schottky technology for very low forward voltage and low leakage.
  • Fast switching with exceptional temperature stability.
  • Low power loss and lower operating temperature.
  • Higher efficiency for achieving regulatory compliance.
  • Low thermal resistance.
  • High surge capability.
  • AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.

Applications

  • Switching power supplies including compact adapters and flat panel displays.
  • High frequency and DC-DC converters.
  • Freewheeling and OR-ing diodes.
  • Reverse battery protection.
  • Instrumentation.

Q & A

  1. What is the peak repetitive reverse voltage of the NRVTS2H60ESFT1G?

    The peak repetitive reverse voltage is 60 V.

  2. What is the average rectified forward current at TL = 125°C?

    The average rectified forward current is 2.0 A.

  3. What is the maximum instantaneous forward voltage at IF = 1.0 A and TJ = 25°C?

    The maximum instantaneous forward voltage is 0.55 V.

  4. What is the thermal resistance, junction-to-ambient, for the SOD-123FL package?

    The thermal resistance, junction-to-ambient, is 85 °C/W.

  5. Is the NRVTS2H60ESFT1G RoHS compliant?
  6. What are the typical applications of the NRVTS2H60ESFT1G?

    Typical applications include switching power supplies, high frequency and DC-DC converters, freewheeling and OR-ing diodes, reverse battery protection, and instrumentation.

  7. What is the storage and operating junction temperature range?

    The storage and operating junction temperature range is -65 to +175 °C.

  8. What is the non-repetitive peak surge current rating?

    The non-repetitive peak surge current is 50 A.

  9. Is the device AEC-Q101 qualified?
  10. What is the lead and mounting surface temperature for soldering purposes?

    The lead and mounting surface temperature for soldering purposes is 260°C maximum for 10 seconds.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):60 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:650 mV @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:12 µA @ 60 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:SOD-123F
Supplier Device Package:SOD-123FL
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.41
30

Please send RFQ , we will respond immediately.

Same Series
DD15S20Z00
DD15S20Z00
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HT20/AA
CBC13W3S10HT20/AA
CONN D-SUB RCPT 13POS CRIMP
DD26M20HE20/AA
DD26M20HE20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S20000/AA
DD26S20000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S000
DD26S2S000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S500X
DD26S2S500X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T2X
DD26S200T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V30
DD26S200V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32000X/AA
DD44S32000X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
RD50S1S500S
RD50S1S500S
CONN D-SUB RCPT 50POS CRIMP
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5W0X/AA
DD26S2S5W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number NRVTS2H60ESFT1G NRVTS2H60ESFT3G NRVTS260ESFT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 60 V 60 V 60 V
Current - Average Rectified (Io) 2A 2A 2A
Voltage - Forward (Vf) (Max) @ If 650 mV @ 2 A 650 mV @ 2 A 650 mV @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 12 µA @ 60 V - 12 µA @ 60 V
Capacitance @ Vr, F - - -
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SOD-123F SOD-123F SOD-123F
Supplier Device Package SOD-123FL SOD-123FL SOD-123FL
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

1SS400T1G
1SS400T1G
onsemi
DIODE GEN PURP 100V 200MA SOD523
BAT43W_R1_00001
BAT43W_R1_00001
Panjit International Inc.
SOD-123, SKY
MUR180EG
MUR180EG
onsemi
DIODE GEN PURP 800V 1A AXIAL
BAS521-7
BAS521-7
Diodes Incorporated
DIODE GEN PURP 300V 250MA SOD523
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
MUR1520G
MUR1520G
onsemi
DIODE GEN PURP 200V 15A TO220-2
BAS21Q-7-F
BAS21Q-7-F
Diodes Incorporated
DIODE GP SW SOT23
BAS40WQ-7-F
BAS40WQ-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT323 T&R 3K
MURS260-M3/5BT
MURS260-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
STTH30L06G
STTH30L06G
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
MBRM120LT3
MBRM120LT3
onsemi
DIODE SCHOTTKY 1A 20V POWERMITE
STTH3R02Q
STTH3R02Q
STMicroelectronics
DIODE GEN PURP 200V 3A DO15

Related Product By Brand

1N5353BRLG
1N5353BRLG
onsemi
DIODE ZENER 16V 5W AXIAL
1SMB5934BT3G
1SMB5934BT3G
onsemi
DIODE ZENER 24V 3W SMB
BC856BDW1T1G
BC856BDW1T1G
onsemi
TRANS 2PNP 65V 0.1A SC88/SC70-6
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
NJW21193G
NJW21193G
onsemi
TRANS PNP 250V 16A TO3P-3L
BC81740MTF
BC81740MTF
onsemi
TRANS NPN 45V 0.8A SOT23-3
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
FDS8935
FDS8935
onsemi
MOSFET 2P-CH 80V 2.1A 8SOIC
NCV33274ADR2G
NCV33274ADR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
NC7SZ57P6X
NC7SZ57P6X
onsemi
IC LOGIC GATE UNIV 2INPUT SC70-6
NL17SZ04XV5T2G
NL17SZ04XV5T2G
onsemi
IC INVERTER 1CH 1-INP SOT553
MC78PC30NTRG
MC78PC30NTRG
onsemi
IC REG LINEAR 3V 150MA 5TSOP