NRVTS2H60ESFT1G
  • Share:

onsemi NRVTS2H60ESFT1G

Manufacturer No:
NRVTS2H60ESFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY SOD123
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NRVTS2H60ESFT1G is a trench-based Schottky rectifier produced by onsemi. This component is designed to offer very low forward voltage and low leakage, making it highly efficient for various applications. It features fine lithography trench-based Schottky technology, which ensures fast switching with exceptional temperature stability. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. It is also Pb-free, halogen-free/BFR-free, and RoHS compliant.

Key Specifications

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 60 V
Average Rectified Forward Current (TL = 125°C) IO 2.0 A
Peak Repetitive Forward Current (Square Wave, 20 kHz, TL = 139°C) IFRM 4.0 A
Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 50 A
Storage and Operating Junction Temperature Range Tstg, TJ -65 to +175 °C
Maximum Instantaneous Forward Voltage (IF = 1.0 A, TJ = 25°C) VF 0.55 V
Thermal Resistance, Junction-to-Ambient (Note 2) RθJA 85 °C/W
Case Molded Epoxy
Weight 11.7 mg (Approximately)
Lead and Mounting Surface Temperature for Soldering Purposes 260°C Maximum for 10 Seconds

Key Features

  • Fine lithography trench-based Schottky technology for very low forward voltage and low leakage.
  • Fast switching with exceptional temperature stability.
  • Low power loss and lower operating temperature.
  • Higher efficiency for achieving regulatory compliance.
  • Low thermal resistance.
  • High surge capability.
  • AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.

Applications

  • Switching power supplies including compact adapters and flat panel displays.
  • High frequency and DC-DC converters.
  • Freewheeling and OR-ing diodes.
  • Reverse battery protection.
  • Instrumentation.

Q & A

  1. What is the peak repetitive reverse voltage of the NRVTS2H60ESFT1G?

    The peak repetitive reverse voltage is 60 V.

  2. What is the average rectified forward current at TL = 125°C?

    The average rectified forward current is 2.0 A.

  3. What is the maximum instantaneous forward voltage at IF = 1.0 A and TJ = 25°C?

    The maximum instantaneous forward voltage is 0.55 V.

  4. What is the thermal resistance, junction-to-ambient, for the SOD-123FL package?

    The thermal resistance, junction-to-ambient, is 85 °C/W.

  5. Is the NRVTS2H60ESFT1G RoHS compliant?
  6. What are the typical applications of the NRVTS2H60ESFT1G?

    Typical applications include switching power supplies, high frequency and DC-DC converters, freewheeling and OR-ing diodes, reverse battery protection, and instrumentation.

  7. What is the storage and operating junction temperature range?

    The storage and operating junction temperature range is -65 to +175 °C.

  8. What is the non-repetitive peak surge current rating?

    The non-repetitive peak surge current is 50 A.

  9. Is the device AEC-Q101 qualified?
  10. What is the lead and mounting surface temperature for soldering purposes?

    The lead and mounting surface temperature for soldering purposes is 260°C maximum for 10 seconds.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):60 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:650 mV @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:12 µA @ 60 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:SOD-123F
Supplier Device Package:SOD-123FL
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.41
30

Please send RFQ , we will respond immediately.

Same Series
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
DD15S10LVLS
DD15S10LVLS
CONN D-SUB HD RCPT 15POS CRIMP
DD26M2S5WV5Z/AA
DD26M2S5WV5Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC13W3S10HT20/AA
CBC13W3S10HT20/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S200ES
DD15S200ES
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0TX
DD26S2S0TX
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HE2S/AA
CBC13W3S10HE2S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S5000/AA
DD26S2S5000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HV5S/AA
CBC9W4S10HV5S/AA
CONN D-SUB RCPT 9POS CRIMP
DD44S32S0T2X
DD44S32S0T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S600X/AA
DD44S32S600X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V30
DD44S32S60V30
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number NRVTS2H60ESFT1G NRVTS2H60ESFT3G NRVTS260ESFT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 60 V 60 V 60 V
Current - Average Rectified (Io) 2A 2A 2A
Voltage - Forward (Vf) (Max) @ If 650 mV @ 2 A 650 mV @ 2 A 650 mV @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 12 µA @ 60 V - 12 µA @ 60 V
Capacitance @ Vr, F - - -
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SOD-123F SOD-123F SOD-123F
Supplier Device Package SOD-123FL SOD-123FL SOD-123FL
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
1N4148W_R1_00001
1N4148W_R1_00001
Panjit International Inc.
SOD-123, SWITCHING
BAT5403WE6327HTSA1
BAT5403WE6327HTSA1
Infineon Technologies
DIODE SCHOT 30V 200MA SOD323-2
BAW56B5000
BAW56B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODES
B360A-13-F
B360A-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
MUR240
MUR240
onsemi
DIODE GEN PURP 400V 2A AXIAL
STTH20R04G
STTH20R04G
STMicroelectronics
DIODE GEN PURP 400V 20A D2PAK
BYC10X-600PQ
BYC10X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 10A TO220F
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35
PMEG3005AEA/ZLX
PMEG3005AEA/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 30V 500MA SC76
BAT54T-HF
BAT54T-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23

Related Product By Brand

MR2835SKG
MR2835SKG
onsemi
TVS DIODE 23VWM TOP CAN
NRVBD1035VCTLT4G
NRVBD1035VCTLT4G
onsemi
DIODE SCHOTTKY DPAK
SMUN5313DW1T1G
SMUN5313DW1T1G
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
NB3N551MNR4G
NB3N551MNR4G
onsemi
IC CLK BUFFER 1:4 180MHZ 8DFN
MC100EP195FAR2
MC100EP195FAR2
onsemi
IC DELAY LINE 1024TAP 32-LQFP
NCD9830DBR2G
NCD9830DBR2G
onsemi
IC ADC 8BIT SAR 16TSSOP
MC14050BDTEL
MC14050BDTEL
onsemi
BUFFER, 6-FUNC
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
NCS29001DR2G
NCS29001DR2G
onsemi
IC LED DRIVER CTRLR PWM 14SOIC
MC33375D-3.0
MC33375D-3.0
onsemi
IC REG LINEAR 3V 300MA 8SOIC