Overview
The NCP81253MNTBG is a high-performance dual MOSFET gate driver produced by onsemi. It is designed to drive the gates of both high-side and low-side power MOSFETs in a synchronous buck converter. The device is packaged in a small 2 mm x 2 mm DFN-8 package, making it ideal for space-constrained applications. The NCP81253MNTBG features an integrated boost diode, which minimizes the number of external components required. Additionally, it includes a VCC undervoltage lockout (UVLO) function to ensure the outputs are low when the supply voltage is low.
Key Specifications
| Parameter | Value |
|---|---|
| Package Type | DFN-8 |
| Package Size | 2 mm x 2 mm |
| Number of Outputs | 2 |
| Topology | Half-Bridge |
| Isolation Type | Junction Isolation |
| Vin Max (V) | 35 |
| VCC Max (V) | 5.5 |
| Drive Source Current Typ (A) | DRVH: 16 / DRVL: 11 |
| Drive Sink Current Typ (A) | DRVH: 11 / DRVL: 8 |
| Turn On Prop. Delay Typ (ns) | - |
| Turn Off Prop. Delay Typ (ns) | - |
Key Features
- Integrated boost diode to minimize external components
- VCC undervoltage lockout (UVLO) function to ensure outputs are low when supply voltage is low
- 5 V 3-stage PWM input
- Adaptive anti-cross-conduction circuit
- Diode braking capability
- Output disable control
Applications
The NCP81253MNTBG is particularly suited for power solutions in notebook and desktop systems. Its compact package and integrated features make it an ideal choice for space-constrained and high-performance applications.
Q & A
- What is the package type of the NCP81253MNTBG?
The NCP81253MNTBG is packaged in a DFN-8 package.
- What is the maximum input voltage for the NCP81253MNTBG?
The maximum input voltage (Vin) is 35 V.
- Does the NCP81253MNTBG have an integrated boost diode?
Yes, the NCP81253MNTBG includes an integrated boost diode.
- What is the purpose of the VCC undervoltage lockout (UVLO) function?
The VCC UVLO function ensures that the outputs are low when the supply voltage is low.
- What type of PWM input does the NCP81253MNTBG support?
The NCP81253MNTBG supports a 5 V 3-stage PWM input.
- Is the NCP81253MNTBG suitable for high-side and low-side MOSFETs?
Yes, it is designed to drive both high-side and low-side power MOSFETs in a synchronous buck converter.
- What are some key applications of the NCP81253MNTBG?
It is particularly suited for power solutions in notebook and desktop systems.
- Does the NCP81253MNTBG have adaptive anti-cross-conduction circuitry?
Yes, it features an adaptive anti-cross-conduction circuit.
- Can the outputs of the NCP81253MNTBG be placed into a high-impedance state?
Yes, the outputs can be placed into a high-impedance state via the tri-state PWM and EN inputs.
- What is the typical drive source current for the high-side and low-side outputs?
The typical drive source current is 16 A for the high-side (DRVH) and 11 A for the low-side (DRVL).
