Overview
The NBRS2H100T3G is a surface mount Schottky power rectifier produced by onsemi. This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier, featuring epitaxial construction with oxide passivation and metal overlay contact. It is designed for low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. The compact SMA/SMB package with J-bend leads makes it ideal for automated handling and integration into various electronic systems.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Peak Repetitive Reverse Voltage (VRRM) | 100 | V |
| Average Rectified Forward Current (IO) | 2.0 | A |
| Non-Repetitive Peak Surge Current (IFSM) | 130 | A |
| Storage Temperature Range (Tstg) | −65 to +175 | °C |
| Operating Junction Temperature (TJ) | −65 to +175 | °C |
| Maximum Instantaneous Forward Voltage (VF) at 2.0 A | 0.79 (TJ = 25°C), 0.65 (TJ = 125°C) | V |
| Maximum Instantaneous Reverse Current (IR) at 100 V | 0.008 (TJ = 25°C), 1.5 (TJ = 125°C) | mA |
| Thermal Resistance, Junction-to-Ambient (RJA) | 71 (SMB), 75 (SMA) | °C/W |
| Case Material | Molded Epoxy | |
| Weight | 70 mg (SMA), 95 mg (SMB) | mg |
| Lead and Mounting Surface Temperature | 260°C Max. for 10 Seconds | °C |
| ESD Ratings | Charged Device Model > 1000 V (Class C5), Human Body Model = 3B |
Key Features
- Compact Package with J-Bend Leads Ideal for Automated Handling
- Highly Stable Oxide Passivated Junction
- Guard-Ring for Overvoltage Protection
- Low Forward Voltage Drop
- Pb-Free and RoHS Compliant
- ESD Ratings: Charged Device Model > 1000 V (Class C5), Human Body Model = 3B
- Device Meets MSL1 Requirements
- NBR and NRVB Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
Applications
- Power Conversion Circuits
- Reverse Battery Protection
- Gate Driving Circuits
- Protection and Free-Wheeling Diodes
Q & A
- What is the peak repetitive reverse voltage of the NBRS2H100T3G?
The peak repetitive reverse voltage (VRRM) is 100 V.
- What is the average rectified forward current of the NBRS2H100T3G?
The average rectified forward current (IO) is 2.0 A.
- What is the maximum instantaneous forward voltage of the NBRS2H100T3G at 2.0 A?
The maximum instantaneous forward voltage (VF) at 2.0 A is 0.79 V at TJ = 25°C and 0.65 V at TJ = 125°C.
- Is the NBRS2H100T3G Pb-Free and RoHS compliant?
- What are the ESD ratings for the NBRS2H100T3G?
The ESD ratings are Charged Device Model > 1000 V (Class C5) and Human Body Model = 3B.
- What are the typical applications of the NBRS2H100T3G?
The device is typically used in power conversion circuits, reverse battery protection, gate driving circuits, and as protection and free-wheeling diodes.
- What is the operating junction temperature range of the NBRS2H100T3G?
The operating junction temperature range (TJ) is −65 to +175 °C.
- Is the NBRS2H100T3G suitable for automotive applications?
- What is the thermal resistance, junction-to-ambient (RJA) of the NBRS2H100T3G?
The thermal resistance, junction-to-ambient (RJA) is 71 °C/W for SMB and 75 °C/W for SMA packages.
- What is the weight of the NBRS2H100T3G in SMA and SMB packages?
The weight is approximately 70 mg for SMA and 95 mg for SMB packages.
