MURA120T3H
  • Share:

onsemi MURA120T3H

Manufacturer No:
MURA120T3H
Manufacturer:
onsemi
Package:
Tray
Description:
DIODE GEN PURPOSE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURA120T3H is a high-performance, ultra-fast recovery power rectifier produced by onsemi. This component is designed for high voltage, high frequency rectification and is suitable for use as free-wheeling and protection diodes in surface mount applications. The MURA120T3H features a compact, rectangular package with J-bend leads, making it ideal for systems where space and weight are critical.

Key Specifications

Parameter Value Unit
Peak Repetitive Reverse Voltage (VRRM) 200 V
Working Peak Reverse Voltage (VRWM) 200 V
DC Blocking Voltage (VR) 200 V
Average Rectified Forward Current (IF(AV)) @ TL = 155°C 1.0 A
Average Rectified Forward Current (IF(AV)) @ TL = 135°C 2.0 A
Non-Repetitive Peak Surge Current (IFSM) 40 A
Operating Junction Temperature Range (TJ) -65 to +175 °C
Maximum Instantaneous Forward Voltage (VF) @ 1 A, TJ = 150°C 0.71 V
Maximum Reverse Recovery Time (trr) @ iF = 1.0 A, di/dt = 50 A/μs 35 ns
ESD Protection (Human Body Model) > 4000 V (Class 3) V
ESD Protection (Charged Device Model) > 1000 V V
Package Type SMA (Pb-Free)
Weight Approximately 70 mg mg

Key Features

  • Small compact surface mountable package with J-bend leads, ideal for automated handling.
  • High temperature glass passivated junction for enhanced reliability.
  • Low forward voltage drop (0.71 V Max @ 1.0 A, TJ = 150°C) for efficient operation.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other critical applications.
  • Pb-free and RoHS compliant, ensuring environmental sustainability.
  • Corrosion-resistant finish and readily solderable terminal leads.
  • High-speed switching with a maximum reverse recovery time of 35 ns.

Applications

The MURA120T3H is ideally suited for various applications, including:

  • High voltage, high frequency rectification.
  • Free-wheeling and protection diodes in surface mount applications.
  • Automotive systems requiring AEC-Q101 qualified components.
  • High-density PC boards in cell phones, handheld portables, and other electronic devices.

Q & A

  1. What is the peak repetitive reverse voltage (VRRM) of the MURA120T3H?

    The peak repetitive reverse voltage (VRRM) is 200 V.

  2. What is the average rectified forward current (IF(AV)) at TL = 155°C?

    The average rectified forward current (IF(AV)) at TL = 155°C is 1.0 A.

  3. What is the maximum instantaneous forward voltage (VF) at 1 A and TJ = 150°C?

    The maximum instantaneous forward voltage (VF) at 1 A and TJ = 150°C is 0.71 V.

  4. What is the maximum reverse recovery time (trr) of the MURA120T3H?

    The maximum reverse recovery time (trr) is 35 ns.

  5. Is the MURA120T3H Pb-free and RoHS compliant?
  6. What is the operating junction temperature range (TJ) of the MURA120T3H?

    The operating junction temperature range (TJ) is -65 to +175°C.

  7. What is the non-repetitive peak surge current (IFSM) of the MURA120T3H?

    The non-repetitive peak surge current (IFSM) is 40 A.

  8. Is the MURA120T3H suitable for automotive applications?
  9. What is the package type of the MURA120T3H?

    The package type is SMA (Pb-Free).

  10. What is the weight of the MURA120T3H?

    The weight is approximately 70 mg.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:2 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AC, SMA
Supplier Device Package:SMA
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
430

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV30/AA
DD15S20LV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
CBC46W4S1S500S
CBC46W4S1S500S
CONN D-SUB RCPT 46POS CRIMP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JV5S
DD15S20JV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0T0
DD26S2S0T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10H00/AA
DD26S10H00/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S0T2X/AA
DD26S2S0T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10H0S/AA
CBC13W3S10H0S/AA
CONN D-SUB RCPT 13POS CRIMP
DD44S32S000
DD44S32S000
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S500X
DD44S32S500X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number MURA120T3H MURA160T3H MURS120T3H MURA120T3G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 600 V 200 V 200 V
Current - Average Rectified (Io) 2A 2A 2A 1A (DC)
Voltage - Forward (Vf) (Max) @ If 875 mV @ 1 A 1.25 V @ 1 A 875 mV @ 1 A 875 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 75 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 2 µA @ 200 V 5 µA @ 600 V 2 µA @ 200 V 2 µA @ 200 V
Capacitance @ Vr, F - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AC, SMA DO-214AC, SMA DO-214AA, SMB DO-214AC, SMA
Supplier Device Package SMA SMA SMB SMA
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

1N4148UR-1
1N4148UR-1
Microchip Technology
DIODE GEN PURP 75V 200MA DO213AA
BAT54WS_R1_00001
BAT54WS_R1_00001
Panjit International Inc.
SOD-323, SKY
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
STPS20SM100ST
STPS20SM100ST
STMicroelectronics
DIODE SCHOTTKY 100V 20A TO220AB
PMEG2010ER,115
PMEG2010ER,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A CFP3
SS16FP
SS16FP
onsemi
DIODE SCHOTTKY 60V 1A SOD123HE
MBRM120LT3
MBRM120LT3
onsemi
DIODE SCHOTTKY 1A 20V POWERMITE
STTH8R06G
STTH8R06G
STMicroelectronics
DIODE GEN PURP 600V 8A D2PAK
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK
SURA8120T3G
SURA8120T3G
onsemi
DIODE GEN PURP 200V 2A SMA
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

SBC847BPDXV6T1G
SBC847BPDXV6T1G
onsemi
TRANS NPN/PNP 45V 0.1A SOT-363
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
NTMFS015N15MC
NTMFS015N15MC
onsemi
MOSFET N-CH 150V 9.2A/61A 8PQFN
LM301ADR2G
LM301ADR2G
onsemi
IC OPAMP GP 1 CIRCUIT 8SOIC
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
CAT24C16YI-GT3JN
CAT24C16YI-GT3JN
onsemi
IC EEPROM 16KBIT I2C 8TSSOP
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
NCP335FCT2G
NCP335FCT2G
onsemi
IC PWR SWITCH P-CHAN 1:1 4WLCSP
REF3033TB-GT3
REF3033TB-GT3
onsemi
IC VREF SERIES 0.2% SOT23-3
NCP715SQ33T2G
NCP715SQ33T2G
onsemi
IC REG LINEAR 3.3V 50MA SC88A
MC7812BTG
MC7812BTG
onsemi
IC REG LINEAR 12V 1A TO220AB
MC33375D-3.0
MC33375D-3.0
onsemi
IC REG LINEAR 3V 300MA 8SOIC