Overview
The MSB1218A-RT1G is a PNP silicon general-purpose amplifier transistor manufactured by onsemi. This transistor is designed for a wide range of applications requiring reliable and efficient amplification. It is known for its robust performance and versatility, making it a popular choice among engineers and designers.
Key Specifications
| Parameter | Value |
|---|---|
| Collector Base Voltage (VCBO) | 45 V |
| Collector Emitter Breakdown Voltage | 45 V |
| Collector Emitter Saturation Voltage | 500 mV |
| Current Gain (hFE) | 100 to 300 (typical at IC = 10 mA, VCE = 10 V) |
| Base Emitter Saturation Voltage | 1.5 V (typical at IC = 10 mA, IB = 1 mA) |
Key Features
- PNP silicon transistor for general-purpose amplification
- High collector base and collector emitter breakdown voltages (45 V each)
- Low collector emitter saturation voltage (500 mV)
- Wide range of current gain (100 to 300)
- Robust and reliable performance
Applications
The MSB1218A-RT1G is suitable for various applications, including but not limited to:
- General-purpose amplification in audio and signal processing circuits
- Switching and driver circuits
- Automotive and industrial control systems
- Consumer electronics and appliances
Q & A
- What is the collector base voltage (VCBO) of the MSB1218A-RT1G?
The collector base voltage (VCBO) is 45 V. - What is the collector emitter breakdown voltage of the MSB1218A-RT1G?
The collector emitter breakdown voltage is 45 V. - What is the typical current gain (hFE) of the MSB1218A-RT1G?
The typical current gain (hFE) is between 100 to 300 at IC = 10 mA, VCE = 10 V. - What is the collector emitter saturation voltage of the MSB1218A-RT1G?
The collector emitter saturation voltage is 500 mV. - What are some common applications of the MSB1218A-RT1G?
Common applications include general-purpose amplification, switching and driver circuits, automotive and industrial control systems, and consumer electronics. - Who is the manufacturer of the MSB1218A-RT1G?
The MSB1218A-RT1G is manufactured by onsemi. - What type of transistor is the MSB1218A-RT1G?
The MSB1218A-RT1G is a PNP silicon general-purpose amplifier transistor. - What is the base emitter saturation voltage of the MSB1218A-RT1G?
The base emitter saturation voltage is typically 1.5 V at IC = 10 mA, IB = 1 mA. - Where can I find detailed specifications for the MSB1218A-RT1G?
Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics. - Is the MSB1218A-RT1G suitable for high-voltage applications?
Yes, the MSB1218A-RT1G is suitable for applications involving high voltages up to 45 V.
