MPSA14G
  • Share:

onsemi MPSA14G

Manufacturer No:
MPSA14G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN DARL 30V 0.5A TO92
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MPSA14G is a Darlington transistor from onsemi, designed to provide high current gain and robust performance in various electronic applications. This NPN silicon transistor is part of the MPSA13 and MPSA14 series, with the MPSA14G being a Pb-free version, making it compliant with current environmental regulations. The device is housed in a TO-92 package, which is widely used in electronic circuits due to its compact size and ease of use.

Key Specifications

CharacteristicSymbolValueUnit
Collector-Emitter VoltageVCES30Vdc
Collector-Base VoltageVCBO30Vdc
Emitter-Base VoltageVEBO10Vdc
Collector Current - ContinuousIC500mAdc
Total Device Dissipation @ TA = 25°CPD625mW
Total Device Dissipation @ TC = 25°CPD1.5W
Operating and Storage Junction Temperature RangeTJ, Tstg-55 to +150°C
Thermal Resistance, Junction-to-AmbientRθJA200°C/mW
Thermal Resistance, Junction-to-CaseRθJC83.3°C/mW
DC Current Gain (IC = 100 mAdc, VCE = 5.0 Vdc)hFE10,000 to 20,000
Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc)VCE(sat)1.5Vdc
Base-Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc)VBE(on)2.0Vdc

Key Features

  • High Current Gain: The MPSA14G offers a high DC current gain (hFE) ranging from 10,000 to 20,000, making it suitable for applications requiring significant amplification.
  • Pb-Free Package: This transistor is available in a Pb-free TO-92 package, ensuring compliance with environmental regulations.
  • High Collector Current: It can handle a continuous collector current of up to 500 mA.
  • Wide Operating Temperature Range: The device operates over a junction temperature range of -55°C to +150°C.
  • Low Saturation Voltage: The collector-emitter saturation voltage is as low as 1.5 Vdc, which is beneficial for reducing power consumption.

Applications

The MPSA14G Darlington transistor is versatile and can be used in a variety of applications, including:

  • Power Amplifiers: Due to its high current gain and ability to handle significant collector currents, it is suitable for power amplifier circuits.
  • Switching Circuits: The low saturation voltage and high current gain make it ideal for switching applications.
  • Motor Control: It can be used in motor control circuits where high current and reliability are required.
  • Audio Amplifiers: The transistor's characteristics make it a good choice for audio amplifier stages.

Q & A

  1. What is the maximum collector-emitter voltage for the MPSA14G?
    The maximum collector-emitter voltage (VCES) is 30 Vdc.
  2. What is the continuous collector current rating of the MPSA14G?
    The continuous collector current (IC) is 500 mAdc.
  3. What is the thermal resistance from junction to ambient for the MPSA14G?
    The thermal resistance from junction to ambient (RθJA) is 200 °C/mW.
  4. What is the DC current gain range for the MPSA14G?
    The DC current gain (hFE) ranges from 10,000 to 20,000.
  5. What is the collector-emitter saturation voltage for the MPSA14G?
    The collector-emitter saturation voltage (VCE(sat)) is 1.5 Vdc.
  6. Is the MPSA14G available in a Pb-free package?
    Yes, the MPSA14G is available in a Pb-free TO-92 package.
  7. What is the operating junction temperature range for the MPSA14G?
    The operating junction temperature range is -55°C to +150°C.
  8. What are some common applications for the MPSA14G?
    Common applications include power amplifiers, switching circuits, motor control, and audio amplifiers.
  9. What is the base-emitter on voltage for the MPSA14G?
    The base-emitter on voltage (VBE(on)) is 2.0 Vdc.
  10. How much total device dissipation can the MPSA14G handle at TA = 25°C?
    The total device dissipation at TA = 25°C is 625 mW.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:20000 @ 100mA, 5V
Power - Max:625 mW
Frequency - Transition:125MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 Long Body
Supplier Device Package:TO-92 (TO-226)
0 Remaining View Similar

In Stock

-
512

Please send RFQ , we will respond immediately.

Same Series
MPSA13RLRA
MPSA13RLRA
TRANS NPN DARL 30V 0.5A TO92
MPSA13RLRAG
MPSA13RLRAG
TRANS NPN DARL 30V 0.5A TO92
MPSA13G
MPSA13G
TRANS NPN DARL 30V 0.5A TO92
MPSA14RLRPG
MPSA14RLRPG
TRANS NPN DARL 30V 0.5A TO92
MPSA14RLRAG
MPSA14RLRAG
TRANS NPN DARL 30V 0.5A TO92
MPSA13RLRMG
MPSA13RLRMG
TRANS NPN DARL 30V 0.5A TO92
MPSA13RLRPG
MPSA13RLRPG
TRANS NPN DARL 30V 0.5A TO92
MPSA13ZL1G
MPSA13ZL1G
TRANS NPN DARL 30V 0.5A TO92

Similar Products

Part Number MPSA14G MPSA18G MPSA44G MPSA12G MPSA13G MPSA14
Manufacturer onsemi onsemi onsemi onsemi onsemi Fairchild Semiconductor
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN - Darlington NPN NPN NPN - Darlington NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 500 mA 200 mA 300 mA - 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 45 V 400 V 20 V 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA 300mV @ 5mA, 50mA 750mV @ 5mA, 50mA 1V @ 10µA, 10mA 1.5V @ 100µA, 100mA 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO) 50nA (ICBO) 500nA 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA, 5V 500 @ 10mA, 5V 50 @ 10mA, 10V 20000 @ 10mA, 5V 10000 @ 100mA, 5V 20000 @ 100mA, 5V
Power - Max 625 mW 625 mW 625 mW 625 mW 625 mW 625 mW
Frequency - Transition 125MHz 160MHz - - 125MHz 125MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92 (TO-226) TO-92 (TO-226) TO-92 (TO-226) TO-92 (TO-226) TO-92 (TO-226) TO-92 (TO-226)

Related Product By Categories

MMBT100
MMBT100
onsemi
TRANS NPN 45V 0.5A SOT23-3
BC858BMTF
BC858BMTF
Fairchild Semiconductor
TRANS PNP 30V 0.1A SOT23-3
BC848B-TP
BC848B-TP
Micro Commercial Co
TRANS NPN 30V 0.1A SOT23
MMBT5088LT1G
MMBT5088LT1G
onsemi
TRANS NPN 30V 0.05A SOT23-3
SMMBT2222ALT3G
SMMBT2222ALT3G
onsemi
TRANS NPN 40V 0.6A SOT23-3
NSS20200LT1G
NSS20200LT1G
onsemi
TRANS PNP 20V 2A SOT23-3
BD140G
BD140G
onsemi
TRANS PNP 80V 1.5A TO126
STN2580
STN2580
STMicroelectronics
TRANS NPN 400V 1A SOT223
BC857CW-G
BC857CW-G
Comchip Technology
TRANS PNP 45V 0.1A SOT323
BC857C TR PBFREE
BC857C TR PBFREE
Central Semiconductor Corp
TRANS PNP 45V 0.1A SOT23
NJVMJD350T4G
NJVMJD350T4G
onsemi
TRANS PNP 300V 0.5A DPAK
S8050-D-AP
S8050-D-AP
Micro Commercial Co
TRANS NPN 25V 0.5A TO92

Related Product By Brand

MJD44H11G
MJD44H11G
onsemi
TRANS NPN 80V 8A DPAK
BD682T
BD682T
onsemi
TRANS PNP DARL 100V 4A TO126
NSS60600MZ4T3G
NSS60600MZ4T3G
onsemi
TRANS PNP 60V 6A SOT223
FDG6332C
FDG6332C
onsemi
MOSFET N/P-CH 20V SC70-6
FDA28N50F
FDA28N50F
onsemi
MOSFET N-CH 500V 28A TO3PN
FGHL75T65MQD
FGHL75T65MQD
onsemi
IGBT 650V 75A TO247
NLV17SZU04DFT2G
NLV17SZU04DFT2G
onsemi
IC INVERTER 1CH 1-INP SC88A
FAN3224TMX-F085
FAN3224TMX-F085
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
ADP3110AKRZ
ADP3110AKRZ
onsemi
IC GATE DRVR HALF-BRIDGE 8SOIC
NCP45495XMNTWG
NCP45495XMNTWG
onsemi
L MANGO
FAN48610BUC33X
FAN48610BUC33X
onsemi
IC REG BOOST 3.3V 1A 9WLCSP
NCP163AFCT280T2G
NCP163AFCT280T2G
onsemi
IC REG LINEAR 2.8V 250MA 4WLCSP