MPSA14G
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onsemi MPSA14G

Manufacturer No:
MPSA14G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN DARL 30V 0.5A TO92
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MPSA14G is a Darlington transistor from onsemi, designed to provide high current gain and robust performance in various electronic applications. This NPN silicon transistor is part of the MPSA13 and MPSA14 series, with the MPSA14G being a Pb-free version, making it compliant with current environmental regulations. The device is housed in a TO-92 package, which is widely used in electronic circuits due to its compact size and ease of use.

Key Specifications

CharacteristicSymbolValueUnit
Collector-Emitter VoltageVCES30Vdc
Collector-Base VoltageVCBO30Vdc
Emitter-Base VoltageVEBO10Vdc
Collector Current - ContinuousIC500mAdc
Total Device Dissipation @ TA = 25°CPD625mW
Total Device Dissipation @ TC = 25°CPD1.5W
Operating and Storage Junction Temperature RangeTJ, Tstg-55 to +150°C
Thermal Resistance, Junction-to-AmbientRθJA200°C/mW
Thermal Resistance, Junction-to-CaseRθJC83.3°C/mW
DC Current Gain (IC = 100 mAdc, VCE = 5.0 Vdc)hFE10,000 to 20,000
Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc)VCE(sat)1.5Vdc
Base-Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc)VBE(on)2.0Vdc

Key Features

  • High Current Gain: The MPSA14G offers a high DC current gain (hFE) ranging from 10,000 to 20,000, making it suitable for applications requiring significant amplification.
  • Pb-Free Package: This transistor is available in a Pb-free TO-92 package, ensuring compliance with environmental regulations.
  • High Collector Current: It can handle a continuous collector current of up to 500 mA.
  • Wide Operating Temperature Range: The device operates over a junction temperature range of -55°C to +150°C.
  • Low Saturation Voltage: The collector-emitter saturation voltage is as low as 1.5 Vdc, which is beneficial for reducing power consumption.

Applications

The MPSA14G Darlington transistor is versatile and can be used in a variety of applications, including:

  • Power Amplifiers: Due to its high current gain and ability to handle significant collector currents, it is suitable for power amplifier circuits.
  • Switching Circuits: The low saturation voltage and high current gain make it ideal for switching applications.
  • Motor Control: It can be used in motor control circuits where high current and reliability are required.
  • Audio Amplifiers: The transistor's characteristics make it a good choice for audio amplifier stages.

Q & A

  1. What is the maximum collector-emitter voltage for the MPSA14G?
    The maximum collector-emitter voltage (VCES) is 30 Vdc.
  2. What is the continuous collector current rating of the MPSA14G?
    The continuous collector current (IC) is 500 mAdc.
  3. What is the thermal resistance from junction to ambient for the MPSA14G?
    The thermal resistance from junction to ambient (RθJA) is 200 °C/mW.
  4. What is the DC current gain range for the MPSA14G?
    The DC current gain (hFE) ranges from 10,000 to 20,000.
  5. What is the collector-emitter saturation voltage for the MPSA14G?
    The collector-emitter saturation voltage (VCE(sat)) is 1.5 Vdc.
  6. Is the MPSA14G available in a Pb-free package?
    Yes, the MPSA14G is available in a Pb-free TO-92 package.
  7. What is the operating junction temperature range for the MPSA14G?
    The operating junction temperature range is -55°C to +150°C.
  8. What are some common applications for the MPSA14G?
    Common applications include power amplifiers, switching circuits, motor control, and audio amplifiers.
  9. What is the base-emitter on voltage for the MPSA14G?
    The base-emitter on voltage (VBE(on)) is 2.0 Vdc.
  10. How much total device dissipation can the MPSA14G handle at TA = 25°C?
    The total device dissipation at TA = 25°C is 625 mW.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:20000 @ 100mA, 5V
Power - Max:625 mW
Frequency - Transition:125MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 Long Body
Supplier Device Package:TO-92 (TO-226)
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Similar Products

Part Number MPSA14G MPSA18G MPSA44G MPSA12G MPSA13G MPSA14
Manufacturer onsemi onsemi onsemi onsemi onsemi Fairchild Semiconductor
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN - Darlington NPN NPN NPN - Darlington NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 500 mA 200 mA 300 mA - 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 45 V 400 V 20 V 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA 300mV @ 5mA, 50mA 750mV @ 5mA, 50mA 1V @ 10µA, 10mA 1.5V @ 100µA, 100mA 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO) 50nA (ICBO) 500nA 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA, 5V 500 @ 10mA, 5V 50 @ 10mA, 10V 20000 @ 10mA, 5V 10000 @ 100mA, 5V 20000 @ 100mA, 5V
Power - Max 625 mW 625 mW 625 mW 625 mW 625 mW 625 mW
Frequency - Transition 125MHz 160MHz - - 125MHz 125MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92 (TO-226) TO-92 (TO-226) TO-92 (TO-226) TO-92 (TO-226) TO-92 (TO-226) TO-92 (TO-226)

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