MMDL914T1G
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onsemi MMDL914T1G

Manufacturer No:
MMDL914T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 100V 200MA SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMDL914T1G is a high-speed switching diode designed for applications requiring fast switching times and reliable performance. This device is manufactured by onsemi and is housed in a SOD-323 surface mount package, making it ideal for automated insertion in various electronic systems. The diode is AEC-Q101 qualified and PPAP capable, ensuring it meets stringent automotive and industrial standards. Additionally, it is Pb-free, halogen-free/BFR-free, and RoHS compliant, aligning with environmental regulations.

Key Specifications

Characteristic Symbol Value Unit
Reverse Voltage VR 100 V
Forward Current IF 200 mA
Non-Repetitive Peak Forward Surge Current IFSM 1.8 A
Repetitive Peak Forward Current IFRM 1.0 A
Reverse Breakdown Voltage V(BR) 100 Vdc
Reverse Voltage Leakage Current IR 25 nA (VR = 20 Vdc), 5.0 nA (VR = 75 Vdc) nAdc
Forward Voltage VF 1.0 Vdc
Reverse Recovery Time trr 4.0 ns
Diode Capacitance CT 4.0 pF
Junction and Storage Temperature TJ, Tstg -55 to 150 °C
Thermal Resistance, Junction-to-Ambient RJA 635 °C/W

Key Features

  • High-Speed Switching: Designed for high-speed switching applications with a fast reverse recovery time of 4.0 ns.
  • AEC-Q101 Qualified and PPAP Capable: Meets automotive and industrial standards, ensuring reliability and quality.
  • Environmental Compliance: Pb-free, halogen-free/BFR-free, and RoHS compliant.
  • Surface Mount Package: Housed in a SOD-323 package, ideal for automated insertion.
  • Low Forward Voltage Drop: Forward voltage of 1.0 Vdc at 10 mA.
  • Low Leakage Current: Reverse voltage leakage current as low as 25 nA at 20 Vdc.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Industrial Control Systems: Used in high-speed switching applications within industrial control systems.
  • Consumer Electronics: Applicable in consumer electronics requiring fast switching diodes.
  • Power Supplies and DC-DC Converters: Utilized in power supply and DC-DC converter circuits for efficient switching.

Q & A

  1. What is the maximum reverse voltage of the MMDL914T1G diode?

    The maximum reverse voltage is 100 V.

  2. What is the forward current rating of the MMDL914T1G diode?

    The forward current rating is 200 mA.

  3. What is the reverse recovery time of the MMDL914T1G diode?

    The reverse recovery time is 4.0 ns.

  4. Is the MMDL914T1G diode RoHS compliant?

    Yes, the MMDL914T1G diode is RoHS compliant, Pb-free, and halogen-free/BFR-free.

  5. What package type is the MMDL914T1G diode available in?

    The diode is housed in a SOD-323 surface mount package.

  6. What are the junction and storage temperature ranges for the MMDL914T1G diode?

    The junction and storage temperature ranges are -55 to 150°C.

  7. What is the thermal resistance, junction-to-ambient, for the MMDL914T1G diode?

    The thermal resistance, junction-to-ambient, is 635°C/W.

  8. Is the MMDL914T1G diode suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

  9. What is the forward voltage drop at 10 mA for the MMDL914T1G diode?

    The forward voltage drop at 10 mA is 1.0 Vdc.

  10. What is the typical diode capacitance of the MMDL914T1G diode?

    The typical diode capacitance is 4.0 pF.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 10 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:5 µA @ 75 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
Operating Temperature - Junction:-55°C ~ 150°C
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In Stock

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Same Series
MMDL914T3G
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DIODE GEN PURP 100V 200MA SOD323
SMMDL914T1G
SMMDL914T1G
DIODE GEN PURP 100V 200MA SOD323

Similar Products

Part Number MMDL914T1G MMDL914T3G MMDL914T1H MMDL914T1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete
Diode Type Standard Standard - Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V - 100 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC) - 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 10 mA 1 V @ 10 mA - 1 V @ 10 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed - Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 4 ns 4 ns - 4 ns
Current - Reverse Leakage @ Vr 5 µA @ 75 V 5 µA @ 75 V - 5 µA @ 75 V
Capacitance @ Vr, F 4pF @ 0V, 1MHz 4pF @ 0V, 1MHz - 4pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount - Surface Mount
Package / Case SC-76, SOD-323 SC-76, SOD-323 - SC-76, SOD-323
Supplier Device Package SOD-323 SOD-323 - SOD-323
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C - -

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