Overview
The MMBT2907AM3T5G is a PNP general-purpose transistor manufactured by ON Semiconductor. It is designed for low-power surface mount applications where board space is limited. This transistor is housed in the SOT-723 surface mount package, making it ideal for compact designs. The device is AEC-Q101 qualified and PPAP capable, ensuring its suitability for automotive and other applications requiring unique site and control change requirements. Additionally, it is Pb-free, halogen-free/BFR-free, and RoHS compliant, aligning with environmental standards.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -60 | Vdc |
| Collector-Base Voltage | VCBO | -60 | Vdc |
| Emitter-Base Voltage | VEBO | -5.0 | Vdc |
| Collector Current - Continuous | IC | -600 | mAdc |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 265 | mW |
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | 470 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = -0.1 mA, VCE = -10 V) | hFE | 75 - 100 | |
| Collector-Emitter Saturation Voltage (IC = -150 mA, IB = -15 mA) | VCE(sat) | -0.4 - 1.6 | Vdc |
| Base-Emitter Saturation Voltage (IC = -150 mA, IB = -15 mA) | VBE(sat) | -1.3 - 2.6 | Vdc |
| Current-Gain - Bandwidth Product (IC = -50 mA, VCE = -20 V, f = 100 MHz) | fT | 200 | MHz |
Key Features
- Compact Package: Housed in the SOT-723 surface mount package, reducing board space.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
- Environmental Compliance: Pb-free, halogen-free/BFR-free, and RoHS compliant.
- Low Power Consumption: Designed for low-power surface mount applications.
- High Reliability: Ensures reliable performance in various operating conditions.
Applications
- General Purpose Amplifier Applications: Suitable for a wide range of amplifier circuits.
- Automotive Electronics: Qualified for use in automotive systems due to AEC-Q101 certification.
- Consumer Electronics: Used in various consumer electronic devices where compact and reliable transistor performance is required.
- Industrial Control Systems: Applicable in industrial control circuits where durability and compliance with environmental standards are necessary.
Q & A
- What is the maximum collector-emitter voltage for the MMBT2907AM3T5G transistor?
The maximum collector-emitter voltage (VCEO) is -60 Vdc.
- What is the package type of the MMBT2907AM3T5G transistor?
The transistor is housed in the SOT-723 surface mount package.
- Is the MMBT2907AM3T5G transistor AEC-Q101 qualified?
Yes, it is AEC-Q101 qualified and PPAP capable.
- What are the environmental compliance standards for the MMBT2907AM3T5G transistor?
The transistor is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What is the typical DC current gain (hFE) for the MMBT2907AM3T5G transistor?
The typical DC current gain (hFE) is 75 to 100 at IC = -0.1 mA and VCE = -10 V.
- What is the collector-emitter saturation voltage (VCE(sat)) for the MMBT2907AM3T5G transistor?
The collector-emitter saturation voltage (VCE(sat)) is -0.4 to -1.6 Vdc at IC = -150 mA and IB = -15 mA.
- What is the current-gain - bandwidth product (fT) for the MMBT2907AM3T5G transistor?
The current-gain - bandwidth product (fT) is 200 MHz at IC = -50 mA, VCE = -20 V, and f = 100 MHz.
- What are the typical applications for the MMBT2907AM3T5G transistor?
It is used in general purpose amplifier applications, automotive electronics, consumer electronics, and industrial control systems.
- What is the maximum collector current for the MMBT2907AM3T5G transistor?
The maximum continuous collector current (IC) is -600 mA.
- What is the thermal resistance, junction-to-ambient (RJA) for the MMBT2907AM3T5G transistor on an FR-5 board?
The thermal resistance, junction-to-ambient (RJA), is 470 °C/W on an FR-5 board.
