MJL21195G
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onsemi MJL21195G

Manufacturer No:
MJL21195G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP 250V 16A TO264
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJL21195G, produced by onsemi, is a PNP silicon power transistor that utilizes Perforated Emitter technology. This transistor is specifically designed for high-power applications such as high power audio output, disk head positioners, and linear applications. It is part of a complementary pair with the MJL21196G (NPN) transistor, offering high performance and reliability in various electronic systems.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 250 Vdc
Collector-Base Voltage VCBO 400 Vdc
Emitter-Base Voltage VEBO 5 Vdc
Collector Current - Continuous IC 16 Adc
Collector Current - Peak ICM 30 Adc
Base Current - Continuous IB 5 Adc
Total Power Dissipation @ TC = 25°C PD 200 W
Derate Above 25°C 1.43 W/°C
Operating and Storage Junction Temperature Range TJ, Tstg -65 to +150 °C
Thermal Resistance, Junction-to-Case RJC 0.7 °C/W

Key Features

  • Total Harmonic Distortion Characterized
  • High DC Current Gain
  • Excellent Gain Linearity
  • High Safe Operating Area (SOA)
  • Pb-Free and RoHS Compliant
  • Epoxy meets UL 94, V-0 @ 0.125 in

Applications

  • High power audio output
  • Disk head positioners
  • Linear applications

Q & A

  1. What is the MJL21195G transistor used for?

    The MJL21195G transistor is used for high power audio output, disk head positioners, and linear applications.

  2. What is the maximum collector-emitter voltage for the MJL21195G?

    The maximum collector-emitter voltage (VCEO) is 250 Vdc.

  3. What is the continuous collector current rating for the MJL21195G?

    The continuous collector current (IC) is 16 Adc.

  4. Is the MJL21195G Pb-Free and RoHS Compliant?
  5. What is the thermal resistance from junction to case for the MJL21195G?

    The thermal resistance from junction to case (RJC) is 0.7 °C/W.

  6. What is the operating and storage junction temperature range for the MJL21195G?

    The operating and storage junction temperature range is -65 to +150 °C.

  7. What package type is the MJL21195G available in?

    The MJL21195G is available in a TO-264 (Pb-Free) package.

  8. What are the key electrical characteristics of the MJL21195G?

    The key electrical characteristics include high DC current gain, excellent gain linearity, and high SOA.

  9. How does the MJL21195G handle thermal stress?

    The MJL21195G has a derating of 1.43 W/°C above 25°C to manage thermal stress.

  10. What is the significance of Perforated Emitter technology in the MJL21195G?

    Perforated Emitter technology enhances the transistor's performance by improving current gain and reducing thermal resistance.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):16 A
Voltage - Collector Emitter Breakdown (Max):250 V
Vce Saturation (Max) @ Ib, Ic:4V @ 3.2A, 16A
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:25 @ 8A, 5V
Power - Max:200 W
Frequency - Transition:4MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-264-3, TO-264AA
Supplier Device Package:TO-264
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In Stock

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Same Series
MJL21195G
MJL21195G
TRANS PNP 250V 16A TO264
MJL21196
MJL21196
TRANS NPN 250V 16A TO264
MJL21195
MJL21195
TRANS PNP 250V 16A TO264

Similar Products

Part Number MJL21195G MJW21195G MJL21196G MJL21193G MJL21194G MJL21195
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Obsolete
Transistor Type PNP PNP NPN PNP NPN PNP
Current - Collector (Ic) (Max) 16 A 16 A 16 A 16 A 16 A 16 A
Voltage - Collector Emitter Breakdown (Max) 250 V 250 V 250 V 250 V 250 V 250 V
Vce Saturation (Max) @ Ib, Ic 4V @ 3.2A, 16A 3V @ 3.2A, 16A 4V @ 3.2A, 16A 4V @ 3.2A, 16A 4V @ 3.2A, 16A 4V @ 3.2A, 16A
Current - Collector Cutoff (Max) 100µA 100µA 100µA 100µA 100µA 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 8A, 5V 20 @ 8A, 5V 25 @ 8A, 5V 25 @ 8A, 5V 25 @ 8A, 5V 25 @ 8A, 5V
Power - Max 200 W 200 W 200 W 200 W 200 W 200 W
Frequency - Transition 4MHz 4MHz 4MHz 4MHz 4MHz 4MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-264-3, TO-264AA TO-247-3 TO-264-3, TO-264AA TO-264-3, TO-264AA TO-264-3, TO-264AA TO-264-3, TO-264AA
Supplier Device Package TO-264 TO-247-3 TO-264 TO-264 TO-264 TO-264

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