Overview
The MJF45H11G is a PNP power transistor manufactured by onsemi, designed for general-purpose power amplification and switching applications. This transistor is part of a complementary pair, along with the MJF44H11 (NPN), which simplifies design processes in various power-related applications. The MJF45H11G is housed in a TO-220 FULLPACK (Pb-Free) package, making it suitable for environments where lead-free components are required.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 80 | Vdc |
| Emitter-Base Voltage | VEB | 5 | Vdc |
| Collector Current - Continuous | IC | 10 | Adc |
| Collector Current - Peak | IC | 20 | Adc |
| Total Power Dissipation @ TC = 25°C | PD | 36 | W |
| Thermal Resistance, Junction-to-Case | RJC | 3.5 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | 62.5 | °C/W |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.0 | Vdc @ 8 A |
| Base-Emitter Saturation Voltage | VBE(sat) | 1.5 | Vdc @ 8 A |
| Gain Bandwidth Product | fT | 40 | MHz |
Key Features
- Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.0 V (Max) @ 8.0 A, ensuring efficient operation in power amplification and switching applications.
- Fast Switching Speeds: The transistor features fast switching times, including delay and rise times, and fall times, making it suitable for high-frequency applications.
- Complementary Pairs: The MJF45H11G is part of a complementary pair with the MJF44H11 (NPN), simplifying design processes and enhancing system performance.
- Pb-Free Packages: Available in Pb-Free TO-220 FULLPACK packages, making it compliant with environmental regulations.
Applications
The MJF45H11G is designed for various power-related applications, including:
- Output or driver stages in switching regulators and converters.
- Power amplifiers and other general-purpose power amplification and switching applications.
Q & A
- What is the collector-emitter voltage rating of the MJF45H11G?
The collector-emitter voltage (VCEO) is rated at 80 Vdc.
- What is the maximum continuous collector current for the MJF45H11G?
The maximum continuous collector current (IC) is 10 Adc.
- What is the total power dissipation of the MJF45H11G at 25°C?
The total power dissipation (PD) at TC = 25°C is 36 W.
- What is the thermal resistance from junction to case for the MJF45H11G?
The thermal resistance from junction to case (RJC) is 3.5 °C/W.
- What is the collector-emitter saturation voltage of the MJF45H11G?
The collector-emitter saturation voltage (VCE(sat)) is 1.0 Vdc @ 8 A.
- What is the gain bandwidth product of the MJF45H11G?
The gain bandwidth product (fT) is 40 MHz.
- In what package is the MJF45H11G available?
The MJF45H11G is available in a TO-220 FULLPACK (Pb-Free) package.
- What are some typical applications of the MJF45H11G?
Typical applications include output or driver stages in switching regulators, converters, and power amplifiers.
- Does the MJF45H11G have a complementary NPN transistor?
- What is the operating junction temperature range for the MJF45H11G?
The operating junction temperature range is -55°C to 150°C.
