MJF44H11G
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onsemi MJF44H11G

Manufacturer No:
MJF44H11G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 80V 10A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJF44H11G is a high-performance NPN bipolar power transistor manufactured by onsemi. This transistor is designed for general-purpose power amplification and switching applications, making it suitable for various industrial and consumer electronics uses. It is part of onsemi's extensive range of discrete power transistors, known for their reliability and efficiency in handling high current and voltage requirements.

Key Specifications

ParameterValue
Transistor TypeNPN
Maximum DC Collector Current10 A
Maximum Collector-Emitter Voltage80 V
Gain Bandwidth Product (fT)50 MHz
Minimum Operating Temperature-55°C
Maximum Operating Temperature+150°C
Power Dissipation (Pd)36 W
Package TypeTO-220FP

Key Features

  • High current handling capability of up to 10 A.
  • High voltage rating of 80 V, making it suitable for applications requiring robust voltage handling.
  • High gain bandwidth product (fT) of 50 MHz, ensuring good high-frequency performance.
  • Broad operating temperature range from -55°C to +150°C, enhancing reliability in diverse environments.
  • TO-220FP package, which is a through-hole type, providing good thermal dissipation and ease of mounting.

Applications

The MJF44H11G transistor is versatile and can be used in a variety of applications, including:

  • Output or driver stages in power amplifiers and switching circuits.
  • Industrial control systems and motor control applications.
  • Automotive electronics, such as in power management and control systems.
  • Consumer electronics, including audio amplifiers and power supplies.
  • General-purpose power amplification and switching in electronic devices.

Q & A

  1. What is the maximum DC collector current of the MJF44H11G transistor?
    The maximum DC collector current is 10 A.
  2. What is the maximum collector-emitter voltage of the MJF44H11G transistor?
    The maximum collector-emitter voltage is 80 V.
  3. What is the gain bandwidth product (fT) of the MJF44H11G transistor?
    The gain bandwidth product (fT) is 50 MHz.
  4. What is the operating temperature range of the MJF44H11G transistor?
    The operating temperature range is from -55°C to +150°C.
  5. What type of package does the MJF44H11G transistor use?
    The MJF44H11G transistor uses a TO-220FP package.
  6. What are some common applications of the MJF44H11G transistor?
    Common applications include output or driver stages in power amplifiers and switching circuits, industrial control systems, automotive electronics, and consumer electronics.
  7. Who is the manufacturer of the MJF44H11G transistor?
    The MJF44H11G transistor is manufactured by onsemi.
  8. What is the power dissipation (Pd) of the MJF44H11G transistor?
    The power dissipation (Pd) is 36 W.
  9. Is the MJF44H11G transistor suitable for high-frequency applications?
    Yes, with a gain bandwidth product (fT) of 50 MHz, it is suitable for high-frequency applications.
  10. Where can I purchase the MJF44H11G transistor?
    You can purchase the MJF44H11G transistor from distributors such as Mouser Electronics, Digi-Key, and other authorized onsemi distributors.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):10 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
Current - Collector Cutoff (Max):1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 4A, 1V
Power - Max:2 W
Frequency - Transition:50MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3 Full Pack
Supplier Device Package:TO-220FP
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Same Series
MJF44H11G
MJF44H11G
TRANS NPN 80V 10A TO220FP
MJF44H11
MJF44H11
TRANS NPN 80V 10A TO220FP
MJF45H11
MJF45H11
TRANS PNP 80V 10A TO220FP

Similar Products

Part Number MJF44H11G MJF45H11G MJF44H11
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Transistor Type NPN PNP NPN
Current - Collector (Ic) (Max) 10 A 10 A 10 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A 1V @ 400mA, 8A 1V @ 400mA, 8A
Current - Collector Cutoff (Max) 1µA 1µA 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A, 1V 40 @ 4A, 1V 40 @ 4A, 1V
Power - Max 2 W 2 W 2 W
Frequency - Transition 50MHz 40MHz 50MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack
Supplier Device Package TO-220FP TO-220FP TO-220FP

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