Overview
The MJE3055TTU is a silicon Epitaxial-Base NPN transistor manufactured by ON Semiconductor. It is packaged in a Jedec TO-220 format, making it suitable for a variety of applications including power switching circuits and general-purpose amplifiers. The MJE3055TTU is known for its high current handling capabilities and is often used in scenarios where high current gain and bandwidth are required. The complementary PNP type of this transistor is the MJE2955T.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 60 | V |
| Collector-Base Voltage (VCBO) | 70 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 10 | A |
| Base Current (IB) | 6 | A |
| Total Power Dissipation (Ptot) at Tcase ≤ 25°C | 75 | W |
| Storage Temperature (Tstg) | -55 to 150 | °C |
| Maximum Operating Junction Temperature (Tj) | 150 | °C |
| DC Current Gain (hFE) at IC = 4A, VCE = 4V | 20 - 100 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 10A, IB = 3.3A | 8 | V |
| Base-Emitter On Voltage (VBE(on)) at IC = 4A, VCE = 4V | 1.8 | V |
| Transistor Frequency (fT) at IC = 500 mA, VCE = 10 V | 2 MHz |
Key Features
- DC Current Gain Specified to 10 Amperes: The MJE3055TTU has a DC current gain specified up to 10 amperes, making it suitable for high-current applications.
- High Current Gain-Bandwidth Product: It features a high current gain-bandwidth product of 2 MHz at IC = 500 mA, VCE = 10 V.
- High Power Handling: The transistor can handle high collector current and power dissipation, with a maximum collector current of 10 A and total power dissipation of 75 W at Tcase ≤ 25°C.
- Wide Operating Temperature Range: It operates over a wide temperature range from -55°C to 150°C, making it versatile for various environmental conditions.
- TO-220 Package: The Jedec TO-220 package is convenient for through-hole mounting and provides good thermal dissipation.
Applications
- Power Switching Circuits: The MJE3055TTU is ideal for power switching applications due to its high current handling and fast switching times.
- General-Purpose Amplifiers: It is also used in general-purpose amplifier circuits where high current gain and bandwidth are necessary.
- Industrial and Automotive Systems: Its robust specifications make it suitable for use in industrial and automotive systems that require reliable and high-performance components.
Q & A
- What is the maximum collector current of the MJE3055TTU?
The maximum collector current of the MJE3055TTU is 10 A.
- What is the collector-emitter voltage rating of the MJE3055TTU?
The collector-emitter voltage rating is 60 V.
- What is the package type of the MJE3055TTU?
The MJE3055TTU is packaged in a Jedec TO-220 format.
- What is the maximum operating junction temperature of the MJE3055TTU?
The maximum operating junction temperature is 150°C.
- What is the DC current gain of the MJE3055TTU at IC = 4A, VCE = 4V?
The DC current gain at IC = 4A, VCE = 4V is between 20 and 100.
- What is the collector-emitter saturation voltage of the MJE3055TTU at IC = 10A, IB = 3.3A?
The collector-emitter saturation voltage at IC = 10A, IB = 3.3A is 8 V.
- What is the base-emitter on voltage of the MJE3055TTU at IC = 4A, VCE = 4V?
The base-emitter on voltage at IC = 4A, VCE = 4V is 1.8 V.
- What is the transistor frequency (fT) of the MJE3055TTU at IC = 500 mA, VCE = 10 V?
The transistor frequency (fT) at IC = 500 mA, VCE = 10 V is 2 MHz.
- What are the typical applications of the MJE3055TTU?
The MJE3055TTU is typically used in power switching circuits and general-purpose amplifiers.
- What is the complementary PNP type of the MJE3055TTU?
The complementary PNP type of the MJE3055TTU is the MJE2955T.
