Overview
The MJE2955TTU is a complementary silicon power transistor produced by onsemi. It is part of the MJE2955T and MJE3055T series, with the MJE2955T being the PNP type and the MJE3055T being the NPN type. These transistors are designed for general-purpose amplifier and switching applications. They are housed in a TO-220 package and are Pb-free and RoHS compliant.
The MJE2955TTU is known for its high current gain-bandwidth product, making it suitable for a wide range of power switching circuits and amplifiers.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 60 | Vdc |
| Collector-Base Voltage | VCB | 70 | Vdc |
| Emitter-Base Voltage | VEB | 5.0 | Vdc |
| Collector Current | IC | 10 | A |
| Base Current | IB | 6.0 | A |
| Total Device Dissipation at Tcase ≤ 25°C | Ptot | 75 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -55 to +150 | °C |
| Thermal Resistance, Junction-to-Case | Rthj-case | 1.67 | °C/W |
| DC Current Gain (IC = 4.0 A, VCE = 4.0 V) | hFE | 20 - 100 | - |
| Collector-Emitter Saturation Voltage (IC = 4.0 A, IB = 0.4 A) | VCE(sat) | 1.1 - 8.0 | Vdc |
| Base-Emitter On Voltage (IC = 4.0 A, VCE = 4.0 V) | VBE(on) | 1.8 | Vdc |
| Current-Gain-Bandwidth Product (IC = 500 mA, VCE = 10 V, f = 500 kHz) | fT | 2.0 | MHz |
Key Features
- High current gain-bandwidth product, making it suitable for high-frequency applications.
- Pb-free and RoHS compliant, ensuring environmental compliance.
- Designed for general-purpose amplifier and switching applications.
- High collector current and base current capabilities.
- Low collector-emitter saturation voltage and base-emitter on voltage.
- Wide operating and storage junction temperature range (-55°C to +150°C).
- Thermal resistance, junction-to-case of 1.67°C/W.
Applications
- General-purpose amplifiers.
- Power switching circuits.
- Audio amplifiers.
- Motor control circuits.
- Power supplies and regulators.
- Automotive and industrial control systems.
Q & A
- What is the collector-emitter voltage rating of the MJE2955TTU?
The collector-emitter voltage rating is 60 Vdc.
- What is the maximum collector current for the MJE2955TTU?
The maximum collector current is 10 A.
- Is the MJE2955TTU Pb-free and RoHS compliant?
- What is the thermal resistance, junction-to-case for the MJE2955TTU?
The thermal resistance, junction-to-case is 1.67°C/W.
- What are the typical applications of the MJE2955TTU?
The MJE2955TTU is typically used in general-purpose amplifiers, power switching circuits, audio amplifiers, motor control circuits, power supplies, and automotive and industrial control systems.
- What is the current-gain-bandwidth product of the MJE2955TTU?
The current-gain-bandwidth product is 2.0 MHz at IC = 500 mA, VCE = 10 V, and f = 500 kHz.
- What is the base-emitter on voltage for the MJE2955TTU?
The base-emitter on voltage is 1.8 Vdc at IC = 4.0 A and VCE = 4.0 V.
- What is the collector-emitter saturation voltage for the MJE2955TTU?
The collector-emitter saturation voltage ranges from 1.1 to 8.0 Vdc depending on the collector and base currents.
- What is the operating junction temperature range for the MJE2955TTU?
The operating junction temperature range is -55°C to +150°C.
- What package type does the MJE2955TTU come in?
The MJE2955TTU comes in a TO-220 package.
