MJD45H11RL
  • Share:

onsemi MJD45H11RL

Manufacturer No:
MJD45H11RL
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS POWER PNP 8A 80V DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJD45H11RL is a PNP epitaxial silicon transistor produced by ON Semiconductor. It is part of the MJD45H11 series, designed for general-purpose power and switching applications. This transistor is packaged in a DPAK (TO-252) surface-mount configuration, making it suitable for a variety of modern electronic designs. The MJD45H11RL is electrically similar to the popular D45H series and is known for its fast switching speeds and low collector-emitter saturation voltage, which are critical for efficient performance in power management and amplification roles.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Emitter Voltage VCEO - - 80 V
Collector Current (DC) IC - - 8 A
Collector Current (Pulse) ICP - - 16 A
Junction Temperature TJ - - 150 °C
Storage Temperature Range TSTG -65 - 150 °C
Thermal Resistance, Junction-to-Case RθJC - - 6.25 °C/W
Thermal Resistance, Junction-to-Ambient RθJA - - 71.4 °C/W
Collector-Emitter Saturation Voltage VCE(sat) - - 1 V
Base-Emitter Saturation Voltage VBE(sat) - - 1.5 V
DC Current Gain hFE 40 - - -
Gain Bandwidth Product fT - - 90 MHz
Collector Capacitance Ccb - - 130 pF

Key Features

  • Lead formed for surface mount application in plastic sleeves (no suffix) and straight lead version in plastic sleeves (“−1” suffix).
  • Electrically similar to popular D44H/D45H series, making it a compatible replacement in many designs.
  • Low collector-emitter saturation voltage, which enhances efficiency in power switching applications.
  • Fast switching speeds, ideal for high-frequency operations.
  • Complementary pairs simplify designs, allowing for easier implementation in circuits requiring both NPN and PNP transistors.
  • Epoxy meets UL 94 V−0 @ 0.125 in, ensuring high safety standards.
  • NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC−Q101 qualified and PPAP capable.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant, aligning with environmental regulations.

Applications

The MJD45H11RL is designed for general-purpose power and switching applications, including:

  • Output or driver stages in switching regulators, converters, and power amplifiers.
  • High-frequency power management circuits.
  • Automotive systems requiring AEC−Q101 qualification.
  • Surface mount applications where space efficiency and high thermal performance are critical.

Q & A

  1. What is the maximum collector current for the MJD45H11RL?

    The maximum collector current (DC) for the MJD45H11RL is 8 A, and the maximum collector current (pulse) is 16 A.

  2. What is the junction temperature range for this transistor?

    The junction temperature range for the MJD45H11RL is up to 150°C.

  3. What is the thermal resistance from junction to case?

    The thermal resistance from junction to case (RθJC) is 6.25°C/W.

  4. Is the MJD45H11RL RoHS compliant?

    Yes, the MJD45H11RL is Pb-free, halogen-free/BFR-free, and RoHS compliant.

  5. What are the typical applications for this transistor?

    The MJD45H11RL is typically used in output or driver stages in switching regulators, converters, and power amplifiers, as well as in automotive systems.

  6. What is the collector-emitter saturation voltage for this transistor?

    The collector-emitter saturation voltage (VCE(sat)) for the MJD45H11RL is 1 V.

  7. What is the gain bandwidth product of the MJD45H11RL?

    The gain bandwidth product (fT) for the MJD45H11RL is 90 MHz.

  8. Is the MJD45H11RL suitable for surface mount applications?

    Yes, the MJD45H11RL is designed for surface mount applications and comes in DPAK packaging.

  9. What are the storage temperature range and lead temperature for soldering?

    The storage temperature range is -65°C to 150°C, and the lead temperature for soldering is 260°C.

  10. Does the MJD45H11RL have any special certifications?

    Yes, it is AEC−Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
Current - Collector Cutoff (Max):1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 2A, 1V
Power - Max:20 W
Frequency - Transition:90MHz
Operating Temperature:- 
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
0 Remaining View Similar

In Stock

-
21

Please send RFQ , we will respond immediately.

Same Series
RD15S10HT0/AA
RD15S10HT0/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10HE0/AA
CBC13W3S10HE0/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HV3S/AA
CBC9W4S10HV3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S00X
DD26S2S00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20WV5S
DD15S20WV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E30
DD26S200E30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T0
DD26S200T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F000
DD26S2F000
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S60V3S/AA
DD62M32S60V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number MJD45H11RL MJD45H11RLG
Manufacturer onsemi onsemi
Product Status Obsolete Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A 1V @ 400mA, 8A
Current - Collector Cutoff (Max) 1µA 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 2A, 1V 40 @ 4A, 1V
Power - Max 20 W 1.75 W
Frequency - Transition 90MHz 90MHz
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK

Related Product By Categories

BCP5616TA
BCP5616TA
Diodes Incorporated
TRANS NPN 80V 1A SOT223-3
BCP69-16/S500115
BCP69-16/S500115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC858B,235
BC858B,235
Nexperia USA Inc.
TRANS PNP 30V 0.1A TO236AB
BC848BL3E6327XTMA1
BC848BL3E6327XTMA1
Infineon Technologies
BC848 - GENERAL PURPOSE TRANSIST
BC807-40W-AU_R1_000A1
BC807-40W-AU_R1_000A1
Panjit International Inc.
TRANS PNP 45V 0.5A SOT323
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
STN2580
STN2580
STMicroelectronics
TRANS NPN 400V 1A SOT223
BC807-40/6215
BC807-40/6215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
PMBT2222A/DG,215
PMBT2222A/DG,215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC847CWH6778XTSA1
BC847CWH6778XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
2N6045
2N6045
Solid State Inc.
TRANS NPN DARL 100V 8A TO220
SS8050-D-AP
SS8050-D-AP
Micro Commercial Co
TRANS NPN 25V 1.5A TO92

Related Product By Brand

NRVBS240LT3G
NRVBS240LT3G
onsemi
DIODE SCHOTTKY 40V 2A SMB
MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
NSS60600MZ4T3G
NSS60600MZ4T3G
onsemi
TRANS PNP 60V 6A SOT223
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
MPSA42G
MPSA42G
onsemi
TRANS NPN 300V 0.5A TO92
NLHV4052DTR2G
NLHV4052DTR2G
onsemi
IC MULTIPLEXER DP4T 16TSSOP
NCS2325DR2G
NCS2325DR2G
onsemi
IC OPAMP ZER-DRIFT 2CIRC 8SOIC
MC74VHC04DTR2G
MC74VHC04DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
AMIS30622C6227G
AMIS30622C6227G
onsemi
IC MTR DRV BIPOLR 6.5-29V 20SOIC
MC33275ST-5.0T3G
MC33275ST-5.0T3G
onsemi
IC REG LINEAR 5V 300MA SOT223
NCV1117ST18T3G
NCV1117ST18T3G
onsemi
IC REG LINEAR 1.8V 1A SOT223