Overview
The MJD45H11RL is a PNP epitaxial silicon transistor produced by ON Semiconductor. It is part of the MJD45H11 series, designed for general-purpose power and switching applications. This transistor is packaged in a DPAK (TO-252) surface-mount configuration, making it suitable for a variety of modern electronic designs. The MJD45H11RL is electrically similar to the popular D45H series and is known for its fast switching speeds and low collector-emitter saturation voltage, which are critical for efficient performance in power management and amplification roles.
Key Specifications
Characteristic | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Collector-Emitter Voltage | VCEO | - | - | 80 | V |
Collector Current (DC) | IC | - | - | 8 | A |
Collector Current (Pulse) | ICP | - | - | 16 | A |
Junction Temperature | TJ | - | - | 150 | °C |
Storage Temperature Range | TSTG | -65 | - | 150 | °C |
Thermal Resistance, Junction-to-Case | RθJC | - | - | 6.25 | °C/W |
Thermal Resistance, Junction-to-Ambient | RθJA | - | - | 71.4 | °C/W |
Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 1 | V |
Base-Emitter Saturation Voltage | VBE(sat) | - | - | 1.5 | V |
DC Current Gain | hFE | 40 | - | - | - |
Gain Bandwidth Product | fT | - | - | 90 | MHz |
Collector Capacitance | Ccb | - | - | 130 | pF |
Key Features
- Lead formed for surface mount application in plastic sleeves (no suffix) and straight lead version in plastic sleeves (“−1” suffix).
- Electrically similar to popular D44H/D45H series, making it a compatible replacement in many designs.
- Low collector-emitter saturation voltage, which enhances efficiency in power switching applications.
- Fast switching speeds, ideal for high-frequency operations.
- Complementary pairs simplify designs, allowing for easier implementation in circuits requiring both NPN and PNP transistors.
- Epoxy meets UL 94 V−0 @ 0.125 in, ensuring high safety standards.
- NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC−Q101 qualified and PPAP capable.
- Pb-free, halogen-free/BFR-free, and RoHS compliant, aligning with environmental regulations.
Applications
The MJD45H11RL is designed for general-purpose power and switching applications, including:
- Output or driver stages in switching regulators, converters, and power amplifiers.
- High-frequency power management circuits.
- Automotive systems requiring AEC−Q101 qualification.
- Surface mount applications where space efficiency and high thermal performance are critical.
Q & A
- What is the maximum collector current for the MJD45H11RL?
The maximum collector current (DC) for the MJD45H11RL is 8 A, and the maximum collector current (pulse) is 16 A.
- What is the junction temperature range for this transistor?
The junction temperature range for the MJD45H11RL is up to 150°C.
- What is the thermal resistance from junction to case?
The thermal resistance from junction to case (RθJC) is 6.25°C/W.
- Is the MJD45H11RL RoHS compliant?
Yes, the MJD45H11RL is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What are the typical applications for this transistor?
The MJD45H11RL is typically used in output or driver stages in switching regulators, converters, and power amplifiers, as well as in automotive systems.
- What is the collector-emitter saturation voltage for this transistor?
The collector-emitter saturation voltage (VCE(sat)) for the MJD45H11RL is 1 V.
- What is the gain bandwidth product of the MJD45H11RL?
The gain bandwidth product (fT) for the MJD45H11RL is 90 MHz.
- Is the MJD45H11RL suitable for surface mount applications?
Yes, the MJD45H11RL is designed for surface mount applications and comes in DPAK packaging.
- What are the storage temperature range and lead temperature for soldering?
The storage temperature range is -65°C to 150°C, and the lead temperature for soldering is 260°C.
- Does the MJD45H11RL have any special certifications?
Yes, it is AEC−Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.