MBRM120LT3H
  • Share:

onsemi MBRM120LT3H

Manufacturer No:
MBRM120LT3H
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE SCHOTTKY
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBRM120LT3H is a Schottky Barrier Rectifier produced by onsemi, designed for high-efficiency and compact applications. This surface mount rectifier utilizes the Schottky Barrier principle with a barrier metal and epitaxial construction, offering an optimal forward voltage drop and reverse current tradeoff. The POWERMITE package is highly efficient, space-saving, and features a unique heatsink design that provides excellent thermal performance despite its small size.

Key Specifications

Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 20 V
Average Rectified Forward Current (At Rated VR, TC = 135°C) IO 1.0 A
Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 135°C) IFRM 2.0 A
Non-Repetitive Peak Surge Current (Halfwave, Single Phase, 60 Hz) IFSM 50 A
Storage Temperature Tstg −55 to 150 °C
Operating Junction Temperature TJ −55 to 125 °C
Maximum Instantaneous Forward Voltage (TJ = 25°C, IF = 1.0 A) VF 0.34 V
Thermal Resistance, Junction-to-Lead (Anode) Rtjl 35 °C/W
Thermal Resistance, Junction-to-Tab (Cathode) Rtjtab 23 °C/W
Thermal Resistance, Junction-to-Ambient Rtja 277 °C/W

Key Features

  • Low Profile: Maximum height of 1.1 mm, making it ideal for compact designs.
  • Small Footprint: Footprint area of 8.45 mm², suitable for space-saving applications.
  • Low VF: Provides higher efficiency and extends battery life.
  • Thermal Performance: Low thermal resistance with a direct thermal path of the die on the exposed cathode heat sink.
  • ESD Ratings: Human Body Model = 3B (> 16 kV), Machine Model = C (> 400 V).
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free: All packages are lead-free.

Applications

The MBRM120LT3H is designed for use in various applications where performance and size are critical, such as:

  • Portable and battery-powered products (cellular and cordless phones, chargers, notebook computers, printers, PDAs, and PCMCIA cards).
  • AC-DC and DC-DC converters.
  • Reverse battery protection.
  • ORing of multiple supply voltages.

Q & A

  1. What is the peak repetitive reverse voltage of the MBRM120LT3H?

    The peak repetitive reverse voltage is 20 V.

  2. What is the average rectified forward current of the MBRM120LT3H at 135°C?

    The average rectified forward current is 1.0 A.

  3. What is the maximum instantaneous forward voltage at 25°C and 1.0 A?

    The maximum instantaneous forward voltage is 0.34 V.

  4. What are the thermal resistance values for junction-to-lead, junction-to-tab, and junction-to-ambient?

    The thermal resistance values are 35°C/W for junction-to-lead, 23°C/W for junction-to-tab, and 277°C/W for junction-to-ambient.

  5. Is the MBRM120LT3H Pb-free?
  6. What are the ESD ratings for the MBRM120LT3H?

    The ESD ratings are Human Body Model = 3B (> 16 kV) and Machine Model = C (> 400 V).

  7. What is the operating junction temperature range for the MBRM120LT3H?

    The operating junction temperature range is −55 to 125°C.

  8. What are some typical applications for the MBRM120LT3H?

    Typical applications include AC-DC and DC-DC converters, reverse battery protection, and ORing of multiple supply voltages.

  9. Is the MBRM120LT3H suitable for automotive applications?
  10. What is the maximum height of the MBRM120LT3H package?

    The maximum height of the package is 1.1 mm.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):20 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:450 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:40 µA @ 20 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-216AA
Supplier Device Package:Powermite
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
233

Please send RFQ , we will respond immediately.

Same Series
DD26M20JV5Z
DD26M20JV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S2S0V50
DD15S2S0V50
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z00
DD15S20Z00
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HT0/AA
CBC13W3S10HT0/AA
CONN D-SUB RCPT 13POS CRIMP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
CBC13W3S10HE0/AA
CBC13W3S10HE0/AA
CONN D-SUB RCPT 13POS CRIMP
CBC47W1S1S50T20
CBC47W1S1S50T20
CONN D-SUB RCPT 47POS CRIMP
DD15S20Z0S
DD15S20Z0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S50V30
DD26S2S50V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S00X/AA
DD44S32S00X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
CBC21W1S10HE2X/AA
CBC21W1S10HE2X/AA
CONN D-SUB RCPT 21POS CRIMP
DD44S32S60T2X
DD44S32S60T2X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number MBRM120LT3H MBRM120LT3 MBRM120LT3G
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Active
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 20 V 20 V 20 V
Current - Average Rectified (Io) 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 450 mV @ 1 A 450 mV @ 1 A 450 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 40 µA @ 20 V 400 µA @ 20 V 400 µA @ 20 V
Capacitance @ Vr, F - - -
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case DO-216AA DO-216AA DO-216AA
Supplier Device Package Powermite Powermite Powermite
Operating Temperature - Junction -55°C ~ 150°C - -55°C ~ 125°C

Related Product By Categories

BAS20-7-F
BAS20-7-F
Diodes Incorporated
DIODE GP 150V 200MA SOT23-3
STTH30RQ06WL
STTH30RQ06WL
STMicroelectronics
600 V, 30 A SOFT ULTRAFAST RECOV
BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
BAT42W-E3-18
BAT42W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
1N4937GP-E3/54
1N4937GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
STTH512D
STTH512D
STMicroelectronics
DIODE GEN PURP 1.2KV 5A TO220AC
MBRS130L
MBRS130L
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 2A, 30V
MURS260-M3/5BT
MURS260-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
BAT54-D87Z
BAT54-D87Z
onsemi
30V SOT23 SCHOTTKY DIODE
MUR240
MUR240
onsemi
DIODE GEN PURP 400V 2A AXIAL
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD

Related Product By Brand

MMSZ5233BT1G
MMSZ5233BT1G
onsemi
DIODE ZENER 6V 500MW SOD123
SZBZX84C12LT1G
SZBZX84C12LT1G
onsemi
DIODE ZENER 12V 250MW SOT23-3
FDMT800100DC
FDMT800100DC
onsemi
MOSFET N-CH 100V 24A/162A 8DUAL
MC100EP195FAR2
MC100EP195FAR2
onsemi
IC DELAY LINE 1024TAP 32-LQFP
NCD9830DBR2G
NCD9830DBR2G
onsemi
IC ADC 8BIT SAR 16TSSOP
LM301ADR2G
LM301ADR2G
onsemi
IC OPAMP GP 1 CIRCUIT 8SOIC
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
NCS29001DR2G
NCS29001DR2G
onsemi
IC LED DRIVER CTRLR PWM 14SOIC
MC34161DMR2G
MC34161DMR2G
onsemi
IC SUPERVISOR 2 CHANNEL MICRO8
MC33064SN-5T1
MC33064SN-5T1
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
UC2842BD
UC2842BD
onsemi
IC REG CTRLR PWM CM 14-SOIC
MC33375ST-3.0T3
MC33375ST-3.0T3
onsemi
IC REG LINEAR 3V 300MA SOT223