Overview
The MBR360G is a high-performance Schottky Barrier rectifier diode produced by onsemi. This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode, featuring state-of-the-art geometry and epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use in low-voltage, high-frequency inverters, free-wheeling diodes, and polarity protection diodes.
Key Specifications
| Characteristic | Symbol | Max Unit |
|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 60 V |
| Working Peak Reverse Voltage | VRWM | 60 V |
| DC Blocking Voltage | VR | 60 V |
| Average Rectified Forward Current (TA = 65°C) | IO | 3.0 A |
| Non-Repetitive Peak Surge Current | IFSM | 80 A |
| Operating and Storage Junction Temperature Range | TJ, Tstg | −65 to +150 °C |
| Thermal Resistance, Junction-to-Ambient | RθJA | 28 °C/W |
| Maximum Instantaneous Forward Voltage (iF = 3.0 A) | vF | 0.740 V |
| Maximum Instantaneous Reverse Current @ Rated DC Voltage (TL = 25°C) | iR | 0.60 mA |
Key Features
- Extremely Low Forward Voltage Drop (vF)
- Low Power Loss and High Efficiency
- Highly Stable Oxide Passivated Junction
- Low Stored Charge, Majority Carrier Conduction
- Pb-Free Packages Available
- Corrosion Resistant and Solderable Terminal Leads
Applications
The MBR360G is designed for various high-speed switching applications, including:
- Low-voltage, high-frequency inverters
- Free-wheeling diodes
- Polarity protection diodes
- Circuit protection and voltage clamping
Q & A
- What is the peak repetitive reverse voltage of the MBR360G?
The peak repetitive reverse voltage (VRRM) of the MBR360G is 60 V.
- What is the average rectified forward current of the MBR360G at 65°C?
The average rectified forward current (IO) at 65°C is 3.0 A.
- What is the maximum instantaneous forward voltage of the MBR360G at 3.0 A?
The maximum instantaneous forward voltage (vF) at 3.0 A is 0.740 V.
- What are the operating and storage junction temperature ranges for the MBR360G?
The operating and storage junction temperature ranges are −65 to +150 °C.
- Is the MBR360G available in Pb-Free packages?
- What is the thermal resistance, junction-to-ambient, for the MBR360G?
The thermal resistance, junction-to-ambient (RθJA), is 28 °C/W.
- What are some typical applications of the MBR360G?
The MBR360G is typically used in low-voltage, high-frequency inverters, free-wheeling diodes, polarity protection diodes, and circuit protection and voltage clamping.
- What is the maximum lead temperature for soldering purposes?
The maximum lead temperature for soldering purposes is 260°C for 10 seconds.
- What is the non-repetitive peak surge current of the MBR360G?
The non-repetitive peak surge current (IFSM) is 80 A.
- What type of case does the MBR360G have?
The MBR360G has an epoxy, molded case with corrosion-resistant and solderable terminal leads.
