Overview
The MBR0530T3G is a Schottky Barrier Rectifier produced by onsemi. This component is designed using the Schottky Barrier principle with a large area metal-to-silicon power diode, making it ideal for low voltage, high frequency rectification. It is also suitable for use as free-wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical.
Key Specifications
Characteristic | Symbol | Value | Unit |
---|---|---|---|
Peak Repetitive Reverse Voltage | VRRM | 30 | V |
Average Rectified Forward Current (Rated VR, TL = 100°C) | IF(AV) | 0.5 | A |
Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) | IFSM | 5.5 | A |
Storage Temperature Range | Tstg | −65 to +150 | °C |
Operating Junction Temperature | TJ | −65 to +125 | °C |
Maximum Instantaneous Forward Voltage (iF = 0.5 Amps, TJ = 25°C) | vF | 0.43 | V |
Thermal Resistance − Junction−to−Ambient | RθJA | 206 | °C/W |
Package | SOD−123 (Pb−Free) |
Key Features
- Guardring for Stress Protection
- Low Forward Voltage
- 125°C Operating Junction Temperature
- Epoxy Meets UL 94, V−0 @ 0.125 in
- Package Designed for Optimal Automated Board Assembly
- Pb−Free and RoHS Compliant
- Corrosion Resistant and Terminal Leads are Readily Solderable
- Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
Applications
The MBR0530T3G is suitable for various applications including:
- Low voltage, high frequency rectification
- Free-wheeling diodes
- Polarity protection diodes
- Surface mount applications where compact size and weight are critical
- Automotive and other applications requiring unique site and control change requirements (NRVB prefix)
Q & A
- What is the peak repetitive reverse voltage of the MBR0530T3G?
The peak repetitive reverse voltage (VRRM) is 30 V.
- What is the average rectified forward current of the MBR0530T3G?
The average rectified forward current (IF(AV)) is 0.5 A.
- What is the maximum operating junction temperature of the MBR0530T3G?
The maximum operating junction temperature (TJ) is 125°C.
- Is the MBR0530T3G Pb−Free and RoHS Compliant?
- What is the thermal resistance − junction−to−ambient of the MBR0530T3G?
The thermal resistance − junction−to−ambient (RθJA) is 206 °C/W.
- What package type does the MBR0530T3G use?
The MBR0530T3G uses the SOD−123 package.
- What are some common applications of the MBR0530T3G?
Common applications include low voltage, high frequency rectification, free-wheeling diodes, polarity protection diodes, and surface mount applications.
- Is the MBR0530T3G suitable for automotive applications?
- What is the maximum instantaneous forward voltage of the MBR0530T3G at 0.5 A and 25°C?
The maximum instantaneous forward voltage (vF) at 0.5 A and 25°C is 0.43 V.
- What is the storage temperature range of the MBR0530T3G?
The storage temperature range (Tstg) is −65 to +150 °C.