KSC5026MOS
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onsemi KSC5026MOS

Manufacturer No:
KSC5026MOS
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 800V 1.5A TO126-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The KSC5026MOS is a high-performance NPN bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for general-purpose and high-reliability applications, offering a combination of high speed switching, wide safe operating area (SOA), and high voltage handling capabilities. It is packaged in a TO-126-3 through-hole configuration, making it suitable for a variety of electronic circuits and systems.

Key Specifications

ParameterValue
Collector-Emitter Voltage (VCEO)800 V
Collector Current (IC)1.5 A
Power Dissipation (Pd)20 W
Collector-Emitter Saturation Voltage (VCE(sat))2 V
Transition Frequency (fT)15 MHz
Package TypeTO-126-3 Through Hole

Key Features

  • High Speed Switching: Suitable for applications requiring fast switching times.
  • Wide Safe Operating Area (SOA): Ensures reliable operation over a broad range of collector-emitter voltages and currents.
  • High Voltage Handling: Capable of handling up to 800 V, making it suitable for high-voltage applications.
  • High Reliability: Designed for long-term reliability in various environmental conditions.

Applications

The KSC5026MOS transistor is versatile and can be used in a variety of applications, including:

  • Power Switching Circuits
  • Amplifier Circuits
  • Motor Control Systems
  • High-Voltage Power Supplies
  • General-Purpose Electronic Circuits

Q & A

  1. What is the collector-emitter voltage rating of the KSC5026MOS transistor?
    The collector-emitter voltage rating is 800 V.
  2. What is the maximum collector current of the KSC5026MOS transistor?
    The maximum collector current is 1.5 A.
  3. What is the power dissipation rating of the KSC5026MOS transistor?
    The power dissipation rating is 20 W.
  4. What is the collector-emitter saturation voltage of the KSC5026MOS transistor?
    The collector-emitter saturation voltage is 2 V.
  5. What is the transition frequency of the KSC5026MOS transistor?
    The transition frequency is 15 MHz.
  6. What package type is the KSC5026MOS transistor available in?
    The transistor is available in a TO-126-3 through-hole package.
  7. What are some key features of the KSC5026MOS transistor?
    Key features include high speed switching, wide SOA, high voltage handling, and high reliability.
  8. In what types of applications can the KSC5026MOS transistor be used?
    The transistor can be used in power switching circuits, amplifier circuits, motor control systems, high-voltage power supplies, and general-purpose electronic circuits.
  9. Who is the manufacturer of the KSC5026MOS transistor?
    The manufacturer is onsemi.
  10. Where can I find detailed specifications for the KSC5026MOS transistor?
    Detailed specifications can be found on the onsemi website, as well as on distributor websites such as Digi-Key and TME.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):800 V
Vce Saturation (Max) @ Ib, Ic:2V @ 150mA, 750mA
Current - Collector Cutoff (Max):10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 100mA, 5V
Power - Max:20 W
Frequency - Transition:15MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126-3
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