Overview
The KSA1015YTA is a PNP epitaxial silicon transistor manufactured by onsemi. This transistor is designed for low-frequency amplifier applications and is part of the KSA1015 series. It is packaged in a 3-pin TO-92 case, making it suitable for through-hole mounting. The device is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and compliance with regulatory standards.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Base Voltage (VCBO) | -50 | V |
| Collector-Emitter Voltage (VCEO) | -50 | V |
| Emitter-Base Voltage (VEBO) | -5 | V |
| Collector Current (IC) | -150 | mA |
| Base Current (IB) | -50 | mA |
| Junction Temperature (TJ) | 150 | °C |
| Storage Temperature Range (TSTG) | -55 to 150 | °C |
| Total Device Dissipation (PD) | 400 | mW |
| Thermal Resistance, Junction to Ambient (RθJA) | 312 | °C/W |
| DC Current Gain (hFE1) at VCE = -6 V, IC = -2 mA | 70 - 400 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) at IC = -100 mA, IB = -10 mA | -0.1 - 0.3 | V |
| Base-Emitter Saturation Voltage (VBE(sat)) at IC = -100 mA, IB = -10 mA | -1.1 | V |
Key Features
- Low-frequency amplifier
- Collector-Base Voltage: VCBO = -50 V
- Complement to KSC1815
- Pb-free, halogen-free, and RoHS compliant
- High DC current gain (hFE) with classifications: 70-140, 120-240, 200-400
- Low collector-emitter and base-emitter saturation voltages
- High current gain bandwidth product (fT) of up to 80 MHz
Applications
The KSA1015YTA is suitable for various low-frequency amplifier applications, including audio amplifiers, general-purpose switching, and other linear circuits. It is not intended for use in critical applications such as life support systems, automotive, military/aerospace, or any safety-critical applications without specific approval from the manufacturer.
Q & A
- What is the collector-base voltage rating of the KSA1015YTA?
The collector-base voltage (VCBO) is rated at -50 V.
- What is the maximum collector current for the KSA1015YTA?
The maximum collector current (IC) is -150 mA.
- Is the KSA1015YTA RoHS compliant?
- What is the thermal resistance, junction to ambient (RθJA), of the KSA1015YTA?
The thermal resistance, junction to ambient (RθJA), is 312 °C/W.
- What are the typical DC current gain values for the KSA1015YTA?
The DC current gain (hFE) ranges from 70 to 400, depending on the classification.
- What is the collector-emitter saturation voltage (VCE(sat)) of the KSA1015YTA?
The collector-emitter saturation voltage (VCE(sat)) is between -0.1 and -0.3 V at IC = -100 mA and IB = -10 mA.
- What is the base-emitter saturation voltage (VBE(sat)) of the KSA1015YTA?
The base-emitter saturation voltage (VBE(sat)) is approximately -1.1 V at IC = -100 mA and IB = -10 mA.
- What is the current gain bandwidth product (fT) of the KSA1015YTA?
The current gain bandwidth product (fT) is up to 80 MHz.
- What are the storage temperature range and junction temperature limits for the KSA1015YTA?
The storage temperature range (TSTG) is -55 to 150 °C, and the junction temperature (TJ) limit is 150 °C.
- Is the KSA1015YTA suitable for high-frequency applications?
No, the KSA1015YTA is designed for low-frequency amplifier applications.
