KSA1013YTA
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onsemi KSA1013YTA

Manufacturer No:
KSA1013YTA
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
TRANS PNP 160V 1A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The KSA1013YTA is a PNP epitaxial silicon transistor manufactured by onsemi. This transistor is designed for various high-current applications, including color TV audio output and vertical deflection output. It features a robust set of electrical characteristics, making it suitable for a range of electronic circuits.

Key Specifications

Parameter Value Unit
Collector-Base Voltage (VCBO) -160 V
Collector-Emitter Voltage (VCEO) -160 V
Emitter-Base Voltage (VEBO) -6 V
Collector Current (IC) -1 A
Base Current (IB) -0.5 A
Junction Temperature (TJ) 150 °C
Storage Temperature (TSTG) -55 to +150 °C
Power Dissipation (PD) 900 mW mW
Thermal Resistance, Junction-to-Ambient (RJA) 139 °C/W °C/W
DC Current Gain (hFE) 60 - 320
Collector-Emitter Saturation Voltage (VCE(sat)) -1.5 V
Base-Emitter On Voltage (VBE(on)) -0.45 to -0.75 V
Current Gain Bandwidth Product (fT) 15 - 50 MHz MHz
Output Capacitance (Cob) - 35 pF pF
Package Type TO-92

Key Features

  • High Collector Current: Up to -1 A, making it suitable for high-current applications.
  • High Voltage Handling: Collector-Base and Collector-Emitter voltages up to -160 V.
  • Wide Operating Temperature Range: Junction temperature up to 150°C and storage temperature from -55°C to +150°C.
  • High DC Current Gain: hFE ranges from 60 to 320.
  • Low Saturation Voltage: Collector-Emitter saturation voltage as low as -1.5 V.
  • Compact Package: TO-92 package, suitable for various board designs.

Applications

  • Color TV Audio Output: Suitable for audio amplification in color TV systems.
  • Color TV Vertical Deflection Output: Used in the vertical deflection circuits of color TVs.
  • General Purpose Amplification: Can be used in various general-purpose amplification circuits requiring high current and voltage handling.

Q & A

  1. What is the maximum collector current of the KSA1013YTA transistor?

    The maximum collector current is -1 A.

  2. What is the maximum collector-emitter voltage of the KSA1013YTA transistor?

    The maximum collector-emitter voltage is -160 V.

  3. What is the typical DC current gain (hFE) of the KSA1013YTA transistor?

    The typical DC current gain ranges from 60 to 320.

  4. What is the thermal resistance, junction-to-ambient (RJA) of the KSA1013YTA transistor?

    The thermal resistance, junction-to-ambient is 139 °C/W.

  5. What is the power dissipation of the KSA1013YTA transistor?

    The power dissipation is 900 mW.

  6. What is the package type of the KSA1013YTA transistor?

    The package type is TO-92.

  7. What are the typical applications of the KSA1013YTA transistor?

    Typical applications include color TV audio output, color TV vertical deflection output, and general-purpose amplification.

  8. What is the storage temperature range for the KSA1013YTA transistor?

    The storage temperature range is from -55°C to +150°C.

  9. What is the current gain bandwidth product (fT) of the KSA1013YTA transistor?

    The current gain bandwidth product ranges from 15 to 50 MHz.

  10. Is the KSA1013YTA transistor lead-free?

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):160 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max):1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 200mA, 5V
Power - Max:900 mW
Frequency - Transition:50MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package:TO-92-3
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Similar Products

Part Number KSA1013YTA KSA1015YTA KSA1013OTA KSA1013RTA
Manufacturer onsemi onsemi Fairchild Semiconductor onsemi
Product Status Active Active Active Obsolete
Transistor Type PNP PNP PNP PNP
Current - Collector (Ic) (Max) 1 A 150 mA 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 160 V 50 V 160 V 160 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA 300mV @ 10mA, 100mA 1.5V @ 50mA, 500mA 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max) 1µA (ICBO) 100nA (ICBO) 1µA (ICBO) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 200mA, 5V 120 @ 2mA, 6V 100 @ 200mA, 5V 60 @ 200mA, 5V
Power - Max 900 mW 400 mW 900 mW 900 mW
Frequency - Transition 50MHz 80MHz 50MHz 50MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads) TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 Long Body (Formed Leads) TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package TO-92-3 TO-92-3 TO-92-3 TO-92-3

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