Overview
The HN2D02FUTW1T1G is an ultra-high speed switching diode produced by onsemi. This silicon epitaxial planar diode is designed for use in ultra-high speed switching applications and is housed in the SC-88 package, which is suitable for low power surface mount applications. The device is Pb-free, halogen-free, and RoHS compliant, making it environmentally friendly and compliant with current regulatory standards.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Reverse Voltage | VR | 80 | V |
| Peak Reverse Voltage | VRM | 85 | V |
| Forward Current | IF | 100 | mA |
| Peak Forward Current | IFM | 240 | mA |
| Peak Forward Surge Current (10 ms) | IFSM | 1.0 | A |
| Forward Voltage | VF | 1.2 | V |
| Reverse Recovery Time | trr | < 3.0 | ns |
| Diode Capacitance | CD | < 2.0 | pF |
| Junction Temperature | TJ | 150 | °C |
| Storage Temperature | Tstg | -55 to +150 | °C |
| Power Dissipation | PD | 300 | mW |
Key Features
- Fast reverse recovery time (trr) of less than 3.0 ns, making it suitable for ultra-high speed switching applications.
- Low diode capacitance (CD) of less than 2.0 pF.
- AEC-Q101 qualified and PPAP capable, indicating its reliability and suitability for automotive and other demanding applications.
- Pb-free, halogen-free, and RoHS compliant, ensuring environmental compliance.
- Triple isolated configuration in the SC-88 package, designed for low power surface mount applications.
Applications
The HN2D02FUTW1T1G is ideal for various high-speed switching applications, including:
- Automotive systems requiring high reliability and compliance with stringent standards.
- High-frequency circuits where fast switching times are critical.
- Surface mount designs where low power and compact packaging are essential.
- General-purpose switching applications in industrial and consumer electronics.
Q & A
- What is the maximum reverse voltage of the HN2D02FUTW1T1G diode?
The maximum reverse voltage (VR) is 80 V, and the peak reverse voltage (VRM) is 85 V. - What is the forward current rating of the HN2D02FUTW1T1G?
The forward current (IF) is 100 mA, and the peak forward current (IFM) is 240 mA. - What is the reverse recovery time of the HN2D02FUTW1T1G?
The reverse recovery time (trr) is less than 3.0 ns. - Is the HN2D02FUTW1T1G RoHS compliant?
Yes, the HN2D02FUTW1T1G is Pb-free, halogen-free, and RoHS compliant. - What is the junction temperature rating of the HN2D02FUTW1T1G?
The junction temperature (TJ) is 150°C. - What is the storage temperature range for the HN2D02FUTW1T1G?
The storage temperature range (Tstg) is -55°C to +150°C. - What is the power dissipation rating of the HN2D02FUTW1T1G?
The power dissipation (PD) is 300 mW. - Is the HN2D02FUTW1T1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications. - What package type is the HN2D02FUTW1T1G available in?
The HN2D02FUTW1T1G is available in the SC-88 package. - What is the diode capacitance of the HN2D02FUTW1T1G?
The diode capacitance (CD) is less than 2.0 pF.
