Overview
The BAV23C-G3-18 is a dual high-voltage switching diode produced by Vishay General Semiconductor - Diodes Division. This component is encapsulated in a small SOT-23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. It is designed for fast switching applications and is particularly suited for rectification, polarity protection, or signal switching in various electronic circuits.
The diode features a common cathode configuration, making it an excellent choice for applications requiring dual diodes with a shared cathode. It is also AEC-Q101 qualified, ensuring its reliability and performance in automotive and industrial environments.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Continuous Reverse Voltage (VR) | 200 | V |
| Repetitive Peak Reverse Voltage (VRRM) | 250 | V |
| Non-repetitive Peak Forward Surge Current (IFSM) at t = 1 μs | 9 | A |
| Maximum Average Forward Rectified Current (IF(AV)) at f ≥ 50 Hz | 200 | mA |
| Forward Continuous Current (IF) | 400 | mA |
| Repetitive Peak Forward Current (IFRM) | 625 | mA |
| Power Dissipation on FR-4 Board | 300 | mW |
| Thermal Resistance Junction to Ambient Air (RthJA) | 420 | K/W |
| Junction Temperature (Tj) | 150 | °C |
| Storage Temperature Range (Tstg) | -65 to +150 | °C |
| Operating Temperature Range (Top) | -55 to +150 | °C |
| Forward Voltage (VF) at IF = 200 mA | 1.25 | V |
| Reverse Recovery Time (trr) | 50 | ns |
| Diode Capacitance (CD) at VR = 0 V, f = 1 MHz | 5 | pF |
Key Features
- Dual High-Voltage Switching Diodes: Encapsulated in a small SOT-23 package, making it suitable for space-constrained applications.
- Common Cathode Configuration: Ideal for applications requiring dual diodes with a shared cathode.
- Fast Switching: Designed for fast switching applications with a reverse recovery time of 50 ns.
- High Voltage Capability: Continuous reverse voltage of 200 V and repetitive peak reverse voltage of 250 V.
- Low Forward Voltage: Forward voltage of 1.25 V at 200 mA.
- AEC-Q101 Qualified: Ensures reliability and performance in automotive and industrial environments.
- High Temperature Operation: Operating temperature range from -55°C to +150°C.
Applications
- Rectification and Polarity Protection: Suitable for rectification and polarity protection in various electronic circuits.
- Signal Switching: Ideal for signal switching applications due to its fast switching characteristics.
- Automotive and Industrial: AEC-Q101 qualified, making it reliable for use in automotive and industrial environments.
- Consumer Electronics: Can be used in consumer electronics for general-purpose switching and rectification needs.
Q & A
- What is the package type of the BAV23C-G3-18?
The BAV23C-G3-18 is encapsulated in a SOT-23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
- What is the diode configuration of the BAV23C-G3-18?
The diode configuration is dual common cathode.
- What is the maximum continuous reverse voltage of the BAV23C-G3-18?
The maximum continuous reverse voltage is 200 V.
- What is the forward voltage of the BAV23C-G3-18 at 200 mA?
The forward voltage at 200 mA is 1.25 V.
- What is the reverse recovery time of the BAV23C-G3-18?
The reverse recovery time is 50 ns.
- Is the BAV23C-G3-18 AEC-Q101 qualified?
Yes, the BAV23C-G3-18 is AEC-Q101 qualified.
- What is the operating temperature range of the BAV23C-G3-18?
The operating temperature range is from -55°C to +150°C.
- What is the maximum average forward rectified current of the BAV23C-G3-18?
The maximum average forward rectified current is 200 mA.
- What is the thermal resistance junction to ambient air of the BAV23C-G3-18?
The thermal resistance junction to ambient air is 420 K/W.
- What is the storage temperature range of the BAV23C-G3-18?
The storage temperature range is from -65°C to +150°C.
- What is the power dissipation of the BAV23C-G3-18 on an FR-4 board?
The power dissipation on an FR-4 board is 300 mW.
