Overview
The FFSP20120A is a Silicon Carbide (SiC) Schottky Diode produced by onsemi. This device leverages the advanced technology of Silicon Carbide to offer superior switching performance and higher reliability compared to traditional silicon-based diodes. The FFSP20120A is designed to provide no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance, making it an ideal choice for high-efficiency and high-power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VRRM (Peak Repetitive Reverse Voltage) | 1200 | V |
| EAS (Single Pulse Avalanche Energy) | 200 | mJ |
| IF (Continuous Rectified Forward Current @ TC < 148°C) | 20 | A |
| IF,Max (Non-Repetitive Peak Forward Surge Current @ TC = 25°C, 10 μs) | 1190 | A |
| IF,SM (Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms) | 135 | A |
| PTOT (Power Dissipation @ TC = 25°C) | 340 | W |
| TJ, TSTG (Operating and Storage Temperature Range) | −55 to +175 | °C |
| RJC (Thermal Resistance, Junction to Case, Max) | 0.44 | °C/W |
| VF (Forward Voltage @ IF = 20 A, TC = 25°C) | 1.45 - 1.75 | V |
| IR (Reverse Current @ VR = 1200 V, TC = 25°C) | − − 200 | μA |
Key Features
- No reverse recovery current and no forward recovery, enhancing switching efficiency.
- Temperature-independent switching characteristics.
- Excellent thermal performance with a high junction temperature rating of 175°C.
- Avalanche rated with a single pulse avalanche energy of 200 mJ.
- High surge current capacity.
- Positive temperature coefficient for ease of paralleling.
- Pb-free, halogen-free, and RoHS compliant.
Applications
- General purpose power switching.
- Switch Mode Power Supplies (SMPS).
- Solar Inverters.
- Uninterruptible Power Supplies (UPS).
- Power switching circuits.
Q & A
- What is the peak repetitive reverse voltage of the FFSP20120A?
The peak repetitive reverse voltage (VRRM) of the FFSP20120A is 1200 V.
- What is the maximum continuous rectified forward current of the FFSP20120A?
The maximum continuous rectified forward current (IF) is 20 A at a case temperature below 148°C.
- What are the thermal characteristics of the FFSP20120A?
The thermal resistance from junction to case (RJC) is 0.44 °C/W, and the operating and storage temperature range is −55 to +175 °C.
- Is the FFSP20120A RoHS compliant?
Yes, the FFSP20120A is Pb-free, halogen-free, and RoHS compliant.
- What are some typical applications of the FFSP20120A?
Typical applications include SMPS, solar inverters, UPS, and general-purpose power switching circuits.
- What is the forward voltage drop of the FFSP20120A at 20 A and 25°C?
The forward voltage drop (VF) at 20 A and 25°C is between 1.45 V and 1.75 V.
- Does the FFSP20120A have any reverse recovery current?
No, the FFSP20120A has no reverse recovery current, which enhances its switching efficiency.
- What is the maximum non-repetitive peak forward surge current of the FFSP20120A?
The maximum non-repetitive peak forward surge current (IF,Max) at 25°C and 10 μs is 1190 A.
- What is the power dissipation of the FFSP20120A at 25°C?
The power dissipation (PTOT) at 25°C is 340 W.
- Is the FFSP20120A suitable for high-frequency applications?
Yes, the FFSP20120A is suitable for high-frequency applications due to its superior switching performance and temperature-independent switching characteristics.
