Overview
The EMT1DXV6T1G is a dual general-purpose PNP transistor array manufactured by onsemi. This component is designed for a wide range of amplifier applications and is housed in the compact SOT-563 package. It offers a balanced combination of high current gain, low noise, and high frequency performance, making it suitable for various electronic circuits.
Key Specifications
| Parameter | Value |
|---|---|
| Configuration | Dual PNP |
| Maximum DC Collector Current | 100 mA |
| Collector-Emitter Voltage (VCEO) Max | 60 V |
| Collector-Base Voltage (VCBO) | 50 V |
| Frequency (fT) | 140 MHz |
| Power Dissipation (Pd) | 500 mW |
Key Features
- Dual PNP transistor configuration for balanced performance.
- High collector-emitter voltage (VCEO) of 60 V and collector-base voltage (VCBO) of 50 V.
- Maximum DC collector current of 100 mA.
- High frequency performance with a transition frequency (fT) of 140 MHz.
- Compact SOT-563 package for space-efficient designs.
- Low noise operation suitable for amplifier applications.
Applications
The EMT1DXV6T1G is versatile and can be used in a variety of applications, including:
- General-purpose amplifiers.
- Audio amplifiers.
- Switching circuits.
- Low noise amplifiers.
- High frequency circuits.
Q & A
- What is the configuration of the EMT1DXV6T1G transistor? The EMT1DXV6T1G is a dual PNP transistor array.
- What is the maximum DC collector current of the EMT1DXV6T1G? The maximum DC collector current is 100 mA.
- What is the collector-emitter voltage (VCEO) of the EMT1DXV6T1G? The collector-emitter voltage (VCEO) is 60 V.
- What is the transition frequency (fT) of the EMT1DXV6T1G? The transition frequency (fT) is 140 MHz.
- In what package is the EMT1DXV6T1G housed? The EMT1DXV6T1G is housed in the SOT-563 package.
- What are some common applications of the EMT1DXV6T1G? Common applications include general-purpose amplifiers, audio amplifiers, switching circuits, low noise amplifiers, and high frequency circuits.
- What is the power dissipation (Pd) of the EMT1DXV6T1G? The power dissipation (Pd) is 500 mW.
- Who is the manufacturer of the EMT1DXV6T1G? The EMT1DXV6T1G is manufactured by onsemi.
- What is the collector-base voltage (VCBO) of the EMT1DXV6T1G? The collector-base voltage (VCBO) is 50 V.
- Is the EMT1DXV6T1G suitable for high frequency applications? Yes, the EMT1DXV6T1G is suitable for high frequency applications due to its high transition frequency.
