EFC4626R-TR
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onsemi EFC4626R-TR

Manufacturer No:
EFC4626R-TR
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 24V 5A CSP4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The EFC4626R-TR is a dual N-Channel Power MOSFET produced by onsemi, designed for high-performance applications. This device features a compact CSP4 (Chip Scale Package) and is Pb-free, halogen-free, and RoHS compliant. It is optimized for low on-state resistance and high current handling, making it suitable for various power management and switching applications.

Key Specifications

ParameterSymbolConditionsValueUnit
Source to Source VoltageVSSSTA = 25°C24V
Gate to Source VoltageVGSSTA = 25°C±10V
Source Current (DC)ISTA = 25°C5A
Source Current (Pulse)ISPPW ≤10 μs, duty cycle ≤1%60A
Total DissipationPTWhen mounted on ceramic substrate (5000 mm² x 0.8 mm)1.4W
Junction TemperatureTJ150°C
Storage TemperatureTstg-55 to +150°C
Static Source to Source On-State ResistanceRSS(on)IS = 2 A, VGS = 4.5 V29.2 - 46.2
Gate Threshold VoltageVGS(th)VSS = 10 V, IS = 1 mA0.5 - 1.3V
Turn-On Delay Timetd(on)VSS = 10 V, VGS = 4.5 V, IS = 2 A20ns
Turn-Off Delay Timetd(off)VSS = 10 V, VGS = 4.5 V, IS = 2 A22000ns

Key Features

  • Low on-state resistance (RSS(on) = 29.2 - 46.2 mΩ at VGS = 4.5 V)
  • High current handling (IS = 5 A, ISP = 60 A for pulse conditions)
  • 2.5 V drive capability
  • Protection diode included
  • Common-drain type configuration
  • 2 kV ESD HBM protection
  • Pb-free, halogen-free, and RoHS compliant
  • Compact CSP4 package (1.01x1.01x0.20 mm)

Applications

The EFC4626R-TR is suitable for a variety of applications, including:

  • Lithium-ion battery charging and discharging switches
  • Power management in portable electronics
  • Switching circuits in automotive and industrial systems
  • High-efficiency power conversion and switching applications

Q & A

  1. What is the maximum source to source voltage for the EFC4626R-TR?
    The maximum source to source voltage is 24 V.
  2. What is the typical on-state resistance of the EFC4626R-TR?
    The typical on-state resistance is between 29.2 and 46.2 mΩ at VGS = 4.5 V.
  3. Is the EFC4626R-TR RoHS compliant?
    Yes, the EFC4626R-TR is Pb-free, halogen-free, and RoHS compliant.
  4. What is the maximum junction temperature for the EFC4626R-TR?
    The maximum junction temperature is 150°C.
  5. What is the package type of the EFC4626R-TR?
    The package type is CSP4 (Chip Scale Package).
  6. What are the typical applications of the EFC4626R-TR?
    Typical applications include lithium-ion battery charging and discharging switches, power management in portable electronics, and switching circuits in automotive and industrial systems.
  7. What is the gate threshold voltage range for the EFC4626R-TR?
    The gate threshold voltage range is 0.5 to 1.3 V.
  8. Does the EFC4626R-TR include a protection diode?
    Yes, the EFC4626R-TR includes a protection diode.
  9. What is the turn-on delay time for the EFC4626R-TR?
    The turn-on delay time is approximately 20 ns.
  10. What is the maximum source current for the EFC4626R-TR under DC conditions?
    The maximum source current under DC conditions is 5 A.

Product Attributes

FET Type:2 N-Channel (Dual) Common Drain
FET Feature:Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:- 
Power - Max:1.4W
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:4-XFBGA
Supplier Device Package:4-BGA (1x1)
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In Stock

$0.41
1,524

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Similar Products

Part Number EFC4626R-TR EFC4627R-TR EFC4621R-TR
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type 2 N-Channel (Dual) Common Drain 2 N-Channel (Dual) Common Drain 2 N-Channel (Dual)
FET Feature Logic Level Gate, 2.5V Drive Logic Level Gate, 2.5V Drive Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss) - - -
Current - Continuous Drain (Id) @ 25°C - - -
Rds On (Max) @ Id, Vgs - - -
Vgs(th) (Max) @ Id - - -
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V 13.4nC @ 4.5V 29nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds - - -
Power - Max 1.4W 1.4W 1.6W
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 4-XFBGA 4-SMD, No Lead 4-XFBGA, FCBGA
Supplier Device Package 4-BGA (1x1) 4-EFCP (1.01x1.01) EFCP1616-4CE-022

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