Overview
The EFC4626R-TR is a dual N-Channel Power MOSFET produced by onsemi, designed for high-performance applications. This device features a compact CSP4 (Chip Scale Package) and is Pb-free, halogen-free, and RoHS compliant. It is optimized for low on-state resistance and high current handling, making it suitable for various power management and switching applications.
Key Specifications
Parameter | Symbol | Conditions | Value | Unit |
---|---|---|---|---|
Source to Source Voltage | VSSS | TA = 25°C | 24 | V |
Gate to Source Voltage | VGSS | TA = 25°C | ±10 | V |
Source Current (DC) | IS | TA = 25°C | 5 | A |
Source Current (Pulse) | ISP | PW ≤10 μs, duty cycle ≤1% | 60 | A |
Total Dissipation | PT | When mounted on ceramic substrate (5000 mm² x 0.8 mm) | 1.4 | W |
Junction Temperature | TJ | 150 | °C | |
Storage Temperature | Tstg | -55 to +150 | °C | |
Static Source to Source On-State Resistance | RSS(on) | IS = 2 A, VGS = 4.5 V | 29.2 - 46.2 | mΩ |
Gate Threshold Voltage | VGS(th) | VSS = 10 V, IS = 1 mA | 0.5 - 1.3 | V |
Turn-On Delay Time | td(on) | VSS = 10 V, VGS = 4.5 V, IS = 2 A | 20 | ns |
Turn-Off Delay Time | td(off) | VSS = 10 V, VGS = 4.5 V, IS = 2 A | 22000 | ns |
Key Features
- Low on-state resistance (RSS(on) = 29.2 - 46.2 mΩ at VGS = 4.5 V)
- High current handling (IS = 5 A, ISP = 60 A for pulse conditions)
- 2.5 V drive capability
- Protection diode included
- Common-drain type configuration
- 2 kV ESD HBM protection
- Pb-free, halogen-free, and RoHS compliant
- Compact CSP4 package (1.01x1.01x0.20 mm)
Applications
The EFC4626R-TR is suitable for a variety of applications, including:
- Lithium-ion battery charging and discharging switches
- Power management in portable electronics
- Switching circuits in automotive and industrial systems
- High-efficiency power conversion and switching applications
Q & A
- What is the maximum source to source voltage for the EFC4626R-TR?
The maximum source to source voltage is 24 V. - What is the typical on-state resistance of the EFC4626R-TR?
The typical on-state resistance is between 29.2 and 46.2 mΩ at VGS = 4.5 V. - Is the EFC4626R-TR RoHS compliant?
Yes, the EFC4626R-TR is Pb-free, halogen-free, and RoHS compliant. - What is the maximum junction temperature for the EFC4626R-TR?
The maximum junction temperature is 150°C. - What is the package type of the EFC4626R-TR?
The package type is CSP4 (Chip Scale Package). - What are the typical applications of the EFC4626R-TR?
Typical applications include lithium-ion battery charging and discharging switches, power management in portable electronics, and switching circuits in automotive and industrial systems. - What is the gate threshold voltage range for the EFC4626R-TR?
The gate threshold voltage range is 0.5 to 1.3 V. - Does the EFC4626R-TR include a protection diode?
Yes, the EFC4626R-TR includes a protection diode. - What is the turn-on delay time for the EFC4626R-TR?
The turn-on delay time is approximately 20 ns. - What is the maximum source current for the EFC4626R-TR under DC conditions?
The maximum source current under DC conditions is 5 A.