Overview
The BSS84-G is a P-channel enhancement-mode field-effect transistor produced by onsemi. It utilizes onsemi’s proprietary high cell density DMOS technology, which minimizes on-state resistance and provides rugged and reliable performance along with fast switching capabilities. This transistor is particularly suited for low-voltage applications requiring a low-current high-side switch and can handle currents up to 0.13 A DC and deliver currents up to 0.52 A.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Drain-Source Voltage | VDSS | -50 | V |
Gate-Source Voltage | VGSS | ±20 | V |
Continuous Drain Current | ID | -0.13 | A |
Pulsed Drain Current | ID | -0.52 | A |
Maximum Power Dissipation | PD | 0.36 | W |
On-Resistance at VGS = -5 V | RDS(ON) | 10 | Ω |
Operating and Storage Junction Temperature Range | TJ, TSTG | -55 to +150 | °C |
Maximum Lead Temperature for Soldering Purposes | TL | 300 | °C |
Key Features
- Voltage-Controlled P-Channel Small-Signal Switch
- High-Density Cell Design for Low RDS(ON)
- High Saturation Current
- Fast switching and reverse body recovery
- Pb-Free and Halogen-Free
Applications
The BSS84-G is ideal for various applications, including:
- DC-DC converters
- Power management in portable batteries, computers, printers, and cellular devices
- General purpose low-voltage switching
Q & A
- What is the maximum drain-source voltage of the BSS84-G?
The maximum drain-source voltage (VDSS) is -50 V.
- What is the continuous drain current rating of the BSS84-G?
The continuous drain current (ID) is -0.13 A.
- What is the on-resistance of the BSS84-G at VGS = -5 V?
The on-resistance (RDS(ON)) at VGS = -5 V is 10 Ω.
- Is the BSS84-G Pb-Free and Halogen-Free?
Yes, the BSS84-G is Pb-Free and Halogen-Free).
- What are the typical applications of the BSS84-G?
The BSS84-G is typically used in DC-DC converters, power management in portable batteries, computers, printers, and cellular devices, as well as general purpose low-voltage switching).
- What is the maximum power dissipation of the BSS84-G?
The maximum power dissipation (PD) is 0.36 W).
- What is the operating and storage junction temperature range of the BSS84-G?
The operating and storage junction temperature range (TJ, TSTG) is -55 to +150 °C).
- What is the package type of the BSS84-G?
The BSS84-G is available in the SOT-23-3 package).
- What is the maximum lead temperature for soldering purposes?
The maximum lead temperature for soldering purposes (TL) is 300 °C).
- What technology is used in the production of the BSS84-G?
The BSS84-G is produced using onsemi’s proprietary high cell density DMOS technology).