Overview
The BDX34BTSTU is a PNP Darlington power transistor manufactured by onsemi. It is part of the BDX34 series, which includes complementary NPN types such as the BDX33B and BDX33C. These transistors are designed for general-purpose and low-speed switching applications, as well as power linear applications.
The BDX34BTSTU features a monolithic Darlington configuration, which provides high DC current gain and low collector-emitter saturation voltage, making it suitable for high-power switching and amplification tasks.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 80 | Vdc |
| Collector-Base Voltage | VCBO | 80 | Vdc |
| Emitter-Base Voltage | VEB | 5.0 | Vdc |
| Collector Current (Continuous) | IC | 10 | A |
| Collector Peak Current | ICM | 15 | A |
| Base Current | IB | 0.25 | A |
| Total Device Dissipation at Tc ≤ 25°C | Ptot | 70 | W |
| Operating Junction Temperature | Tj | -65 to +150 | °C |
| Storage Temperature | Tstg | -65 to +150 | °C |
| DC Current Gain (hFE) | hFE | 750 (min) | @ IC = 3A, VCE = 3V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VCE(sat) | 2.5 | V @ IC = 3A, IB = 6mA |
| Thermal Resistance, Junction-to-Case (Rthj-case) | Rthj-case | 1.78 | °C/W |
Key Features
- High DC current gain (hFE = 750 min at IC = 3A, VCE = 3V)
- Low collector-emitter saturation voltage (VCE(sat) = 2.5 V max at IC = 3A, IB = 6mA)
- Monolithic Darlington configuration with built-in base-emitter shunt resistors
- Pb-free and RoHS compliant
- High collector-emitter sustaining voltage (VCEO(sus) = 80 V min)
- Wide operating temperature range (-65°C to +150°C)
Applications
- General-purpose and low-speed switching applications
- Power linear applications
- Industrial motor drives
- Power supplies and converters
- Automotive electronics
- High-power switching and amplification tasks
Q & A
- What is the collector-emitter breakdown voltage of the BDX34BTSTU?
The collector-emitter breakdown voltage (VCEO) is 80 Vdc.
- What is the maximum collector current of the BDX34BTSTU?
The maximum collector current (IC) is 10 A.
- What is the DC current gain (hFE) of the BDX34BTSTU?
The DC current gain (hFE) is 750 min at IC = 3A, VCE = 3V.
- What is the collector-emitter saturation voltage (VCE(sat)) of the BDX34BTSTU?
The collector-emitter saturation voltage (VCE(sat)) is 2.5 V max at IC = 3A, IB = 6mA.
- Is the BDX34BTSTU Pb-free and RoHS compliant?
Yes, the BDX34BTSTU is Pb-free and RoHS compliant.
- What is the thermal resistance, junction-to-case (Rthj-case) of the BDX34BTSTU?
The thermal resistance, junction-to-case (Rthj-case) is 1.78 °C/W.
- What is the operating junction temperature range of the BDX34BTSTU?
The operating junction temperature range is -65°C to +150°C.
- What are the typical applications of the BDX34BTSTU?
The BDX34BTSTU is used in general-purpose and low-speed switching applications, power linear applications, industrial motor drives, power supplies and converters, automotive electronics, and high-power switching and amplification tasks.
- What is the package type of the BDX34BTSTU?
The BDX34BTSTU is packaged in a TO-220-3 case.
- What is the maximum total device dissipation of the BDX34BTSTU at Tc ≤ 25°C?
The maximum total device dissipation (Ptot) at Tc ≤ 25°C is 70 W.
