Overview
The BC81725MTF is an NPN Epitaxial Silicon Transistor manufactured by onsemi. This transistor is designed for use in both linear and switching applications. It is housed in the SOT-23 package, which is suitable for lower power surface mount applications. The device is part of the BC817 series, which is known for its reliability and versatility in various electronic circuits.
Key Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage (BVCEO) | IC = 10 mA, IB = 0 | 45 | V | ||
| Collector-Emitter Breakdown Voltage (BVCES) | IC = 0.1 mA, VBE = 0 | 50 | V | ||
| Emitter-Base Breakdown Voltage (BVEBO) | IE = 0.1 mA, IC = 0 | 5 | V | ||
| Collector Current (IC) | 800 | mA | |||
| Junction Temperature (TJ) | 150 | °C | |||
| Storage Temperature (TSTG) | -65 | 150 | °C | ||
| Power Dissipation (PD) | 310 | mW | |||
| Thermal Resistance, Junction-to-Ambient (RθJA) | 403 | °C/W | |||
| DC Current Gain (hFE1) | VCE = 1 V, IC = 100 mA | 160 | 400 | ||
| Collector-Emitter Saturation Voltage (VCE(sat)) | IC = 500 mA, IB = 50 mA | 0.7 | V | ||
| Base-Emitter On Voltage (VBE(on)) | VCE = 1 V, IC = 300 mA | 1.2 | V | ||
| Current Gain Bandwidth Product (fT) | VCE = 5 V, IC = 10 mA, f = 50 MHz | 100 | MHz |
Key Features
- Switching and amplifier applications
- Suitable for AF-driver stages and low power output stages
- Complement to BC807 / BC808
- Housed in SOT-23 package for lower power surface mount applications
- Pb-Free packages available
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements
Applications
- Switching circuits
- Steering logic
- Automotive control units
- Consumer electronics
- Low power output stages
- AF-driver stages
Q & A
- What is the BC81725MTF transistor used for?
The BC81725MTF is used in both linear and switching applications, including AF-driver stages, low power output stages, and other general-purpose circuits.
- What is the package type of the BC81725MTF?
The BC81725MTF is housed in the SOT-23 package.
- What is the maximum collector current of the BC81725MTF?
The maximum collector current (IC) is 800 mA.
- What is the junction temperature range for the BC81725MTF?
The junction temperature (TJ) range is up to 150°C.
- What is the power dissipation of the BC81725MTF?
The power dissipation (PD) is 310 mW.
- What is the thermal resistance, junction-to-ambient (RθJA) of the BC81725MTF?
The thermal resistance, junction-to-ambient (RθJA) is 403 °C/W.
- What are the typical DC current gain values for the BC81725MTF?
The DC current gain (hFE1) ranges from 160 to 400 at VCE = 1 V and IC = 100 mA.
- What is the collector-emitter saturation voltage (VCE(sat)) of the BC81725MTF?
The collector-emitter saturation voltage (VCE(sat)) is 0.7 V at IC = 500 mA and IB = 50 mA.
- Is the BC81725MTF suitable for automotive applications?
Yes, the BC81725MTF is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- Are Pb-Free packages available for the BC81725MTF?
Yes, Pb-Free packages are available for the BC81725MTF.
