BC80725MTF
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onsemi BC80725MTF

Manufacturer No:
BC80725MTF
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.8A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC80725MTF is a PNP epitaxial silicon transistor manufactured by onsemi. This transistor is part of the BC807 series and is designed for general-purpose applications, including switching and amplifier stages. It is particularly suitable for AF-driver stages and low power output stages. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. It is also Pb-free, halogen-free/BFR-free, and RoHS compliant.

Key Specifications

ParameterSymbolValueUnit
Collector-Emitter VoltageVCEO-45V
Collector-Base VoltageVCBO-50V
Emitter-Base VoltageVEBO-5.0V
Collector Current (DC)IC-800 mAmA
Junction TemperatureTJ-55 to +150°C
Storage TemperatureTSTG-65 to +150°C
DC Current Gain (IC = -100 mA, VCE = -1.0 V)hFE160 to 400
Collector-Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA)VCE(sat)-0.7V
Base-Emitter On Voltage (IC = -500 mA, VCE = -1.0 V)VBE(on)-1.2V
Current Gain Bandwidth Product (IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz)fT100MHz
Output Capacitance (VCB = -10 V, f = 1 MHz)Cobo12pF

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.
  • High DC current gain (hFE) ranging from 160 to 400.
  • Low collector-emitter saturation voltage (VCE(sat)) of -0.7 V.
  • Low base-emitter on voltage (VBE(on)) of -1.2 V.
  • High current gain bandwidth product (fT) of 100 MHz.

Applications

  • Switching and amplifier stages.
  • AF-driver stages and low power output stages.
  • Automotive and other applications requiring unique site and control change requirements.

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BC80725MTF transistor? The collector-emitter voltage (VCEO) is -45 V.
  2. What is the maximum collector current (IC) for the BC80725MTF? The maximum collector current (IC) is -800 mA.
  3. Is the BC80725MTF RoHS compliant? Yes, the BC80725MTF is Pb-free, halogen-free/BFR-free, and RoHS compliant.
  4. What is the typical DC current gain (hFE) of the BC80725MTF? The typical DC current gain (hFE) ranges from 160 to 400.
  5. What is the collector-emitter saturation voltage (VCE(sat)) of the BC80725MTF? The collector-emitter saturation voltage (VCE(sat)) is -0.7 V.
  6. What is the base-emitter on voltage (VBE(on)) of the BC80725MTF? The base-emitter on voltage (VBE(on)) is -1.2 V.
  7. What is the current gain bandwidth product (fT) of the BC80725MTF? The current gain bandwidth product (fT) is 100 MHz.
  8. What package type is the BC80725MTF available in? The BC80725MTF is available in the SOT-23 3L package.
  9. Is the BC80725MTF suitable for automotive applications? Yes, the BC80725MTF is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
  10. What are some common applications of the BC80725MTF transistor? Common applications include switching and amplifier stages, AF-driver stages, and low power output stages).

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):800 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
Power - Max:310 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
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Same Series
BC80840MTF
BC80840MTF
TRANS PNP 25V 0.8A SOT23-3

Similar Products

Part Number BC80725MTF BC80825MTF
Manufacturer onsemi Fairchild Semiconductor
Product Status Obsolete Obsolete
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 800 mA 800 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 25 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V 160 @ 100mA, 1V
Power - Max 310 mW 310 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3

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