Overview
The BAW56TT1G is a dual high-speed switching diode produced by onsemi, designed for ultra-high speed switching applications. This device is housed in the SOT-416/SC-75 package, which is optimized for low power surface mount applications where board space is limited. The BAW56TT1G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, making it suitable for a wide range of applications, including automotive and other sectors requiring unique site and control change requirements. It is AEC-Q101 qualified and PPAP capable.
Key Specifications
Characteristic | Symbol | Max Unit |
---|---|---|
Reverse Voltage | VR | 70 Vdc |
Forward Current | IF | 200 mAdc |
Peak Forward Surge Current | IFM(surge) | 500 mAdc |
Total Device Dissipation (FR-4 Board, TA = 25°C) | PD | 225 mW (Note 1), 360 mW (Note 2) |
Thermal Resistance, Junction-to-Ambient | RθJA | 555 °C/W (Note 1), 345 °C/W (Note 2) |
Junction and Storage Temperature Range | TJ, Tstg | −55 to +150 °C |
Reverse Breakdown Voltage (IBR = 100 μAdc) | V(BR) | 70 Vdc |
Reverse Voltage Leakage Current (VR = 70 Vdc, TJ = 150°C) | IR | 50 μAdc |
Diode Capacitance (VR = 0, f = 1.0 MHz) | CD | 2.0 pF |
Forward Voltage (IF = 1.0 mAdc) | VF | 0.6 V |
Key Features
- Ultra-high speed switching capabilities, making it suitable for high-frequency applications.
- Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
- AEC-Q101 qualified and PPAP capable, ideal for automotive and other applications requiring strict quality standards.
- Housed in the SOT-416/SC-75 package, optimized for low power surface mount applications.
- Common anode configuration.
- Low forward voltage drop and high reverse voltage rating.
Applications
- Ultra-high speed switching applications.
- Automotive electronics requiring AEC-Q101 qualification and PPAP capability.
- General-purpose switching and rectification in electronic circuits.
- High-frequency signal processing and transmission systems.
- Surface mount applications where board space is limited.
Q & A
- What is the maximum reverse voltage rating of the BAW56TT1G? The maximum reverse voltage rating is 70 Vdc.
- What is the maximum forward current of the BAW56TT1G? The maximum forward current is 200 mAdc.
- Is the BAW56TT1G RoHS compliant? Yes, the BAW56TT1G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
- What package type is the BAW56TT1G housed in? The BAW56TT1G is housed in the SOT-416/SC-75 package.
- What are the typical applications of the BAW56TT1G? The BAW56TT1G is used in ultra-high speed switching applications, automotive electronics, and general-purpose switching and rectification.
- What is the thermal resistance, junction-to-ambient, of the BAW56TT1G? The thermal resistance, junction-to-ambient, is 555 °C/W (Note 1) and 345 °C/W (Note 2).
- What is the maximum junction and storage temperature range of the BAW56TT1G? The maximum junction and storage temperature range is −55 to +150 °C.
- Is the BAW56TT1G AEC-Q101 qualified? Yes, the BAW56TT1G is AEC-Q101 qualified and PPAP capable.
- What is the forward voltage drop of the BAW56TT1G at 1.0 mAdc? The forward voltage drop at 1.0 mAdc is approximately 0.6 V.
- What is the diode capacitance of the BAW56TT1G at 1.0 MHz? The diode capacitance at 1.0 MHz is 2.0 pF.