BAS16DXV6T5
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onsemi BAS16DXV6T5

Manufacturer No:
BAS16DXV6T5
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 75V 200MA SOT563
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16DXV6T5 is a dual switching diode produced by ON Semiconductor. This component is designed for general switching applications and is known for its high reliability and performance. The BAS16DXV6T5 is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring stringent quality standards. It is also Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring environmental sustainability.

Key Specifications

Characteristic Symbol Max Unit
Continuous Reverse Voltage VR 75 V
Recurrent Peak Forward Current IF 200 mA
Peak Forward Surge Current (Pulse Width = 10 μs) IFM(surge) 500 mA
Total Device Dissipation (TA = 25°C, One Junction Heated) PD 357 mW
Thermal Resistance, Junction-to-Ambient (One Junction Heated) RJA 350 °C/W
Total Device Dissipation (TA = 25°C, Both Junctions Heated) PD 500 mW
Thermal Resistance, Junction-to-Ambient (Both Junctions Heated) RJA 250 °C/W
Junction and Storage Temperature TJ, Tstg -55 to +150 °C
Forward Voltage (IF = 1.0 mA, 10 mA, 50 mA, 150 mA) VF 715 mV, 866 mV, 1000 mV, 1250 mV
Reverse Current (VR = 75 V, TJ = 150°C, VR = 25 V, TJ = 150°C) IR 1.0 μA, 50 μA, 30 μA
Capacitance (VR = 0, f = 1.0 MHz) CD 2.0 pF
Reverse Recovery Time (IF = IR = 10 mA, RL = 50 Ω) trr 6.0 ns
Stored Charge (IF = 10 mA to VR = 6.0 V, RL = 500 Ω) QS 45 pC
Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) VFR 1.75 V

Key Features

  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other stringent applications.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.
  • High reliability and performance in general switching applications.
  • Low forward voltage drop and low reverse current.
  • Fast reverse recovery time and low stored charge.
  • Compact SOT-563 package with a 2 mm or 4 mm pitch, suitable for space-constrained designs.

Applications

  • Automotive systems requiring high reliability and compliance with automotive standards.
  • General switching applications in consumer electronics.
  • Power supplies and DC-DC converters.
  • Audio and video equipment.
  • Industrial control systems.

Q & A

  1. What is the maximum continuous reverse voltage of the BAS16DXV6T5?

    The maximum continuous reverse voltage is 75 V.

  2. What is the peak forward surge current of the BAS16DXV6T5?

    The peak forward surge current is 500 mA for a pulse width of 10 μs.

  3. What is the thermal resistance, junction-to-ambient for one junction heated?

    The thermal resistance, junction-to-ambient for one junction heated is 350 °C/W.

  4. What is the junction and storage temperature range of the BAS16DXV6T5?

    The junction and storage temperature range is -55 to +150 °C.

  5. What is the forward voltage drop at different current levels?

    The forward voltage drop is 715 mV at 1.0 mA, 866 mV at 10 mA, 1000 mV at 50 mA, and 1250 mV at 150 mA.

  6. What is the reverse recovery time of the BAS16DXV6T5?

    The reverse recovery time is 6.0 ns.

  7. Is the BAS16DXV6T5 RoHS compliant?

    Yes, the BAS16DXV6T5 is Pb-free, halogen-free/BFR-free, and RoHS compliant.

  8. What package types are available for the BAS16DXV6T5?

    The BAS16DXV6T5 is available in the SOT-563 package with a 2 mm or 4 mm pitch.

  9. What are some typical applications of the BAS16DXV6T5?

    Typical applications include automotive systems, general switching in consumer electronics, power supplies, audio and video equipment, and industrial control systems.

  10. Is the BAS16DXV6T5 AEC-Q101 qualified?

    Yes, the BAS16DXV6T5 is AEC-Q101 qualified and PPAP capable.

Product Attributes

Diode Configuration:2 Independent
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io) (per Diode):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Operating Temperature - Junction:-55°C ~ 150°C
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
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Same Series
BAS16DXV6T5
BAS16DXV6T5
DIODE ARRAY GP 75V 200MA SOT563
BAS16DXV6T1
BAS16DXV6T1
DIODE ARRAY GP 75V 200MA SOT563

Similar Products

Part Number BAS16DXV6T5 BAS16DXV6T5G BAS16DXV6T1
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
Diode Configuration 2 Independent 2 Independent 2 Independent
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 75 V 75 V
Current - Average Rectified (Io) (per Diode) 200mA (DC) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 6 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package SOT-563 SOT-563 SOT-563

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