Overview
The BAS16DXV6T1 is a dual switching diode produced by ON Semiconductor. This component is designed for high-performance switching applications and is particularly suited for automotive and other environments that require stringent quality and reliability standards. The BAS16DXV6T1 is AEC-Q101 qualified and PPAP capable, ensuring it meets the rigorous demands of automotive and industrial applications. It is also Pb-free, halogen-free, and RoHS compliant, aligning with modern environmental standards.
Key Specifications
| Characteristic | Symbol | Max Unit |
|---|---|---|
| Continuous Reverse Voltage | VR | 100 V |
| Recurrent Peak Forward Current | IF | 200 mA |
| Peak Forward Surge Current (Pulse Width = 10 μs) | IFM(surge) | 500 mA |
| Total Device Dissipation (TA = 25°C, One Junction Heated) | PD | 357 mW |
| Derate above 25°C (One Junction Heated) | - | 2.9 mW/°C |
| Thermal Resistance, Junction-to-Ambient (One Junction Heated) | RθJA | 350 °C/W |
| Total Device Dissipation (TA = 25°C, Both Junctions Heated) | PD | 500 mW |
| Derate above 25°C (Both Junctions Heated) | - | 4.0 mW/°C |
| Thermal Resistance, Junction-to-Ambient (Both Junctions Heated) | RθJA | 250 °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 °C |
| Forward Voltage (IF = 1.0 mA, 10 mA, 50 mA, 150 mA) | VF | 715 mV, 855 mV, 1000 mV, 1250 mV |
| Reverse Current (VR = 100 V, VR = 75 V at TJ = 150°C, VR = 25 V at TJ = 150°C) | IR | 1.0 μA, 50 μA, 30 μA |
| Capacitance (VR = 0, f = 1.0 MHz) | CD | 2.0 pF |
| Reverse Recovery Time (IF = IR = 10 mA, RL = 50 Ω) | trr | 6.0 ns |
| Stored Charge (IF = 10 mA to VR = 6.0 V, RL = 500 Ω) | QS | 45 pC |
| Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) | VFR | 1.75 V |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-free, halogen-free, and RoHS compliant, ensuring environmental compliance.
- High forward surge current capability (500 mA) for handling transient conditions.
- Low forward voltage drop (715 mV to 1250 mV) depending on the forward current.
- Fast reverse recovery time (6.0 ns) and low stored charge (45 pC) for efficient switching.
- Wide operating temperature range (-55°C to +150°C) for diverse application environments.
Applications
- Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification and robust performance.
- Industrial control systems: Used in industrial control circuits where high reliability and fast switching times are critical.
- Consumer electronics: Applies to consumer electronics requiring high-performance switching diodes with low forward voltage drop.
- Power supplies: Utilized in power supply circuits for voltage regulation and protection.
- Communication equipment: Employed in communication devices for signal processing and protection.
Q & A
- What is the maximum continuous reverse voltage of the BAS16DXV6T1?
The maximum continuous reverse voltage is 100 V.
- What is the peak forward surge current of the BAS16DXV6T1?
The peak forward surge current is 500 mA for a pulse width of 10 μs.
- Is the BAS16DXV6T1 RoHS compliant?
Yes, the BAS16DXV6T1 is Pb-free, halogen-free, and RoHS compliant.
- What is the forward voltage drop of the BAS16DXV6T1 at different current levels?
The forward voltage drop ranges from 715 mV at 1.0 mA to 1250 mV at 150 mA.
- What is the reverse recovery time of the BAS16DXV6T1?
The reverse recovery time is 6.0 ns.
- What are the typical applications of the BAS16DXV6T1?
Typical applications include automotive systems, industrial control systems, consumer electronics, power supplies, and communication equipment.
- What is the operating temperature range of the BAS16DXV6T1?
The operating temperature range is -55°C to +150°C.
- Is the BAS16DXV6T1 AEC-Q101 qualified?
Yes, the BAS16DXV6T1 is AEC-Q101 qualified and PPAP capable.
- What is the thermal resistance, junction-to-ambient, for the BAS16DXV6T1?
The thermal resistance, junction-to-ambient, is 350 °C/W for one junction heated and 250 °C/W for both junctions heated.
- What is the stored charge of the BAS16DXV6T1?
The stored charge is 45 pC.
