BAS16DXV6T1G
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onsemi BAS16DXV6T1G

Manufacturer No:
BAS16DXV6T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 75V 200MA SOT563
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The BAS16DXV6T1G is a dual switching diode produced by onsemi, designed for high-speed switching applications. It is packaged in the SOT-563 case, which is extremely small and suitable for space-constrained designs. This diode is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. The device is lead-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

Characteristic Symbol Min Max Unit
Continuous Reverse Voltage VR 100 V
Recurrent Peak Forward Current IF 200 mA
Peak Forward Surge Current (Pulse Width = 10 μs) IFM(surge) 500 mA
Forward Voltage (IF = 1.0 mA) VF 715 mV
Forward Voltage (IF = 10 mA) VF 855 mV
Forward Voltage (IF = 50 mA) VF 1000 mV
Forward Voltage (IF = 150 mA) VF 1250 mV
Reverse Current (VR = 100 V) IR 1.0 μA
Reverse Recovery Time trr 6.0 ns
Capacitance (VR = 0, f = 1.0 MHz) CD 2.0 pF
Junction and Storage Temperature TJ, Tstg -55 +150 °C

Key Features

  • High-Speed Switching: Designed for high-speed switching applications with a reverse recovery time of 6.0 ns.
  • Compact Package: Packaged in the SOT-563 case, which is extremely small and suitable for space-constrained designs.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Environmental Compliance: Lead-free, halogen-free, and RoHS compliant.
  • Qualified Reflow Temperature: Qualified for reflow temperatures up to 260°C.
  • Low Forward Voltage: Forward voltage as low as 715 mV at 1.0 mA.

Applications

  • Automotive Systems: Suitable for automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • High-Speed Switching Circuits: Ideal for high-speed switching applications due to its fast reverse recovery time.
  • Consumer Electronics: Used in various consumer electronic devices where small form factor and high performance are required.
  • Industrial Control Systems: Applicable in industrial control systems that require reliable and fast switching diodes.

Q & A

  1. What is the maximum continuous reverse voltage of the BAS16DXV6T1G?

    The maximum continuous reverse voltage is 100 V.

  2. What is the peak forward surge current of the BAS16DXV6T1G?

    The peak forward surge current is 500 mA for a pulse width of 10 μs.

  3. What is the forward voltage of the BAS16DXV6T1G at 1.0 mA?

    The forward voltage at 1.0 mA is 715 mV.

  4. What is the reverse recovery time of the BAS16DXV6T1G?

    The reverse recovery time is 6.0 ns.

  5. Is the BAS16DXV6T1G RoHS compliant?

    Yes, the BAS16DXV6T1G is RoHS compliant, lead-free, and halogen-free.

  6. What is the junction and storage temperature range of the BAS16DXV6T1G?

    The junction and storage temperature range is -55°C to +150°C.

  7. What package type is used for the BAS16DXV6T1G?

    The BAS16DXV6T1G is packaged in the SOT-563 case.

  8. Is the BAS16DXV6T1G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

  9. What is the qualified reflow temperature for the BAS16DXV6T1G?

    The qualified reflow temperature is up to 260°C.

  10. What is the capacitance of the BAS16DXV6T1G at 1.0 MHz?

    The capacitance is 2.0 pF at 1.0 MHz.

Product Attributes

Diode Configuration:2 Independent
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io) (per Diode):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Operating Temperature - Junction:-55°C ~ 150°C
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
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Same Series
SBAS16DXV6T1G
SBAS16DXV6T1G
BAS16DXV6 - DUAL SWITCHING DIODE

Similar Products

Part Number BAS16DXV6T1G BAS16DXV6T5G BAS16DXV6T1
Manufacturer onsemi onsemi onsemi
Product Status Active Obsolete Obsolete
Diode Configuration 2 Independent 2 Independent 2 Independent
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 75 V 75 V
Current - Average Rectified (Io) (per Diode) 200mA (DC) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 6 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package SOT-563 SOT-563 SOT-563

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