BAS16DXV6T1G
  • Share:

onsemi BAS16DXV6T1G

Manufacturer No:
BAS16DXV6T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 75V 200MA SOT563
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16DXV6T1G is a dual switching diode produced by onsemi, designed for high-speed switching applications. It is packaged in the SOT-563 case, which is extremely small and suitable for space-constrained designs. This diode is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. The device is lead-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

Characteristic Symbol Min Max Unit
Continuous Reverse Voltage VR 100 V
Recurrent Peak Forward Current IF 200 mA
Peak Forward Surge Current (Pulse Width = 10 μs) IFM(surge) 500 mA
Forward Voltage (IF = 1.0 mA) VF 715 mV
Forward Voltage (IF = 10 mA) VF 855 mV
Forward Voltage (IF = 50 mA) VF 1000 mV
Forward Voltage (IF = 150 mA) VF 1250 mV
Reverse Current (VR = 100 V) IR 1.0 μA
Reverse Recovery Time trr 6.0 ns
Capacitance (VR = 0, f = 1.0 MHz) CD 2.0 pF
Junction and Storage Temperature TJ, Tstg -55 +150 °C

Key Features

  • High-Speed Switching: Designed for high-speed switching applications with a reverse recovery time of 6.0 ns.
  • Compact Package: Packaged in the SOT-563 case, which is extremely small and suitable for space-constrained designs.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Environmental Compliance: Lead-free, halogen-free, and RoHS compliant.
  • Qualified Reflow Temperature: Qualified for reflow temperatures up to 260°C.
  • Low Forward Voltage: Forward voltage as low as 715 mV at 1.0 mA.

Applications

  • Automotive Systems: Suitable for automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • High-Speed Switching Circuits: Ideal for high-speed switching applications due to its fast reverse recovery time.
  • Consumer Electronics: Used in various consumer electronic devices where small form factor and high performance are required.
  • Industrial Control Systems: Applicable in industrial control systems that require reliable and fast switching diodes.

Q & A

  1. What is the maximum continuous reverse voltage of the BAS16DXV6T1G?

    The maximum continuous reverse voltage is 100 V.

  2. What is the peak forward surge current of the BAS16DXV6T1G?

    The peak forward surge current is 500 mA for a pulse width of 10 μs.

  3. What is the forward voltage of the BAS16DXV6T1G at 1.0 mA?

    The forward voltage at 1.0 mA is 715 mV.

  4. What is the reverse recovery time of the BAS16DXV6T1G?

    The reverse recovery time is 6.0 ns.

  5. Is the BAS16DXV6T1G RoHS compliant?

    Yes, the BAS16DXV6T1G is RoHS compliant, lead-free, and halogen-free.

  6. What is the junction and storage temperature range of the BAS16DXV6T1G?

    The junction and storage temperature range is -55°C to +150°C.

  7. What package type is used for the BAS16DXV6T1G?

    The BAS16DXV6T1G is packaged in the SOT-563 case.

  8. Is the BAS16DXV6T1G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

  9. What is the qualified reflow temperature for the BAS16DXV6T1G?

    The qualified reflow temperature is up to 260°C.

  10. What is the capacitance of the BAS16DXV6T1G at 1.0 MHz?

    The capacitance is 2.0 pF at 1.0 MHz.

Product Attributes

Diode Configuration:2 Independent
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io) (per Diode):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Operating Temperature - Junction:-55°C ~ 150°C
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
0 Remaining View Similar

In Stock

$0.44
2,093

Please send RFQ , we will respond immediately.

Same Series
SBAS16DXV6T1G
SBAS16DXV6T1G
BAS16DXV6 - DUAL SWITCHING DIODE

Similar Products

Part Number BAS16DXV6T1G BAS16DXV6T5G BAS16DXV6T1
Manufacturer onsemi onsemi onsemi
Product Status Active Obsolete Obsolete
Diode Configuration 2 Independent 2 Independent 2 Independent
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 75 V 75 V
Current - Average Rectified (Io) (per Diode) 200mA (DC) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 6 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package SOT-563 SOT-563 SOT-563

Related Product By Categories

PMEG4010CPA,115
PMEG4010CPA,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V 3HUSON
BAT54A-AQ
BAT54A-AQ
Diotec Semiconductor
SCHOTTKY SOT-23 30V 0.2A
BAV70S/DG/B3135
BAV70S/DG/B3135
NXP USA Inc.
RECTIFIER DIODE
BAS 70-05 E6433
BAS 70-05 E6433
Infineon Technologies
SCHOTTKY DIODE
BYV34-600,127
BYV34-600,127
NXP USA Inc.
NOW WEEN - BYV34-600 - ULTRAFAST
BAT754C,215
BAT754C,215
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 30V SOT23
BAV99SH6327XTSA1
BAV99SH6327XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
STPS61170CW
STPS61170CW
STMicroelectronics
DIODE ARRAY SCHOTTKY 170V TO247
MBRB2060CT-E3/81
MBRB2060CT-E3/81
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 60V TO263AB
SBAV70LT3G
SBAV70LT3G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
BAS40-05-F2-0000HF
BAS40-05-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
SCHOTTKY DIODE 40V 0.2A SOT-23-3
BAV99WE6433BTMA1
BAV99WE6433BTMA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323

Related Product By Brand

SZ1SMA5924BT3G
SZ1SMA5924BT3G
onsemi
DIODE ZENER 9.1V 1.5W SMA
1SMB5927BT3
1SMB5927BT3
onsemi
DIODE ZENER 12V 3W SMB
MPSA42G
MPSA42G
onsemi
TRANS NPN 300V 0.5A TO92
BC547BTAR
BC547BTAR
onsemi
TRANS NPN 45V 0.1A TO92-3
2SK4177-DL-1E
2SK4177-DL-1E
onsemi
MOSFET N-CH 1500V 2A TO263-2
NL27WZ08USG
NL27WZ08USG
onsemi
IC GATE AND 2CH 2-INP US8
NL37WZ04USG
NL37WZ04USG
onsemi
IC INVERTER 3CH 3-INP US8
74HC04DR2G
74HC04DR2G
onsemi
IC INVERTER 6CH 1-INP 14SOIC
NCP1252ADR2G
NCP1252ADR2G
onsemi
IC OFFLINE SWITCH MULT TOP 8SOIC
NCP303160MNTWG
NCP303160MNTWG
onsemi
INTEGRATED DRIVER & MOSFFET
NCV4276CDS50R4G
NCV4276CDS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK-5
NCP584HSN12T1G
NCP584HSN12T1G
onsemi
IC REG LINEAR 1.2V 200MA SOT23-5