2SC6097-TL-E
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onsemi 2SC6097-TL-E

Manufacturer No:
2SC6097-TL-E
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 60V 3A TP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2SC6097-TL-E is a high-performance bipolar transistor manufactured by onsemi. This NPN transistor is designed for high current switching applications, featuring low collector-to-emitter saturation voltage (VCE(sat)) and high allowable power dissipation. It is particularly suited for applications requiring high-speed switching and large current capacity.

Key Specifications

Parameter Symbol Conditions Ratings Unit
Collector to Base Voltage VCBO - -100 V
Collector to Emitter Voltage VCES - -100 V
Collector to Emitter Voltage VCEO - -60 V
Emitter to Base Voltage VEBO - -6.5 V
Collector Current IC - -3 A A
Collector Current (Pulse) ICP - -5 A A
Base Current IB - -600 mA mA
Collector Dissipation PC TC = 25°C -0.8 W (15 W at TC = 25°C) W
Junction Temperature Tj - -150 °C °C
Storage Temperature Tstg - -55 to +150 °C °C
DC Current Gain hFE VCE = 2 V, IC = 100 mA 300 - 600 -
Gain-Bandwidth Product fT VCE = 10 V, IC = 500 mA -390 MHz MHz
Collector to Emitter Saturation Voltage VCE(sat) IC = 1 A, IB = 50 mA -100 to 150 mV mV

Key Features

  • Adoption of FBET, MBIT Process
  • Low Collector-to-Emitter Saturation Voltage (VCE(sat))
  • High Allowable Power Dissipation
  • Large Current Capacity
  • High-Speed Switching Capability

Applications

  • DC/DC Converters
  • Relay Drivers
  • Lamp Drivers
  • Motor Drivers
  • Inverter Applications

Q & A

  1. What is the maximum collector current of the 2SC6097-TL-E?

    The maximum collector current is 3 A, with a pulse current of up to 5 A.

  2. What is the collector-to-emitter saturation voltage (VCE(sat)) of the 2SC6097-TL-E?

    The VCE(sat) is typically between 100 mV and 150 mV at IC = 1 A and IB = 50 mA.

  3. What is the gain-bandwidth product (fT) of the 2SC6097-TL-E?

    The gain-bandwidth product is approximately 390 MHz at VCE = 10 V and IC = 500 mA.

  4. What are the typical applications of the 2SC6097-TL-E?

    Typical applications include DC/DC converters, relay drivers, lamp drivers, motor drivers, and inverter applications.

  5. What is the maximum junction temperature for the 2SC6097-TL-E?

    The maximum junction temperature is 150 °C.

  6. What is the storage temperature range for the 2SC6097-TL-E?

    The storage temperature range is -55 °C to +150 °C.

  7. What is the DC current gain (hFE) of the 2SC6097-TL-E?

    The DC current gain is between 300 and 600 at VCE = 2 V and IC = 100 mA.

  8. What package types are available for the 2SC6097-TL-E?

    The transistor is available in SC-64, TO-251, and SC-63, TO-252 packages.

  9. Is the 2SC6097-TL-E lead-free?
  10. What is the typical turn-on time for the 2SC6097-TL-E?

    The typical turn-on time is 35 ns.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:135mV @ 100mA, 1A
Current - Collector Cutoff (Max):1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:300 @ 100mA, 2V
Power - Max:800 mW
Frequency - Transition:390MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:TP
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In Stock

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Same Series
2SC6097-E
2SC6097-E
TRANS NPN 60V 3A TP

Similar Products

Part Number 2SC6097-TL-E 2SC6099-TL-E 2SC6098-TL-E 2SC6017-TL-E
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Not For New Designs Active Obsolete
Transistor Type NPN NPN NPN NPN
Current - Collector (Ic) (Max) 3 A 2 A 2.5 A 10 A
Voltage - Collector Emitter Breakdown (Max) 60 V 100 V 80 V 50 V
Vce Saturation (Max) @ Ib, Ic 135mV @ 100mA, 1A 165mV @ 100mA, 1A 165mV @ 50mA, 1A 360mV @ 250mA, 5A
Current - Collector Cutoff (Max) 1µA (ICBO) 1µA (ICBO) 1µA (ICBO) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100mA, 2V 300 @ 100mA, 5V 300 @ 100mA, 5V 200 @ 1A, 2V
Power - Max 800 mW 800 mW 800 mW 950 mW
Frequency - Transition 390MHz 300MHz 350MHz 200MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Surface Mount Surface Mount Surface Mount
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TP TP-FA TP-FA TP-FA

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