2SC3647T-TD-E
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onsemi 2SC3647T-TD-E

Manufacturer No:
2SC3647T-TD-E
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 100V 2A PCP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2SC3647T-TD-E is a single NPN bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for general-purpose applications and is known for its reliability and performance. It is packaged in the SOT-89 format, which is a surface-mount device (SMD) package, making it suitable for modern electronic designs where space efficiency is crucial.

Key Specifications

ParameterValue
PolarityNPN
Collector-Base Voltage (Vcbo)100 V
Collector-Emitter Voltage (Vceo)100 V
Emitter-Base Voltage (Vebo)5 V
Collector Current (Ic)2 A
Base Current (Ib)200 mA
Power Dissipation (Pd)1.25 W
Operating Temperature Range-55°C to 150°C
Package TypeSOT-89

Key Features

  • High collector current of up to 2 A, making it suitable for power applications.
  • High collector-emitter voltage of 100 V, providing robust performance in various circuits.
  • Compact SOT-89 package, ideal for space-constrained designs.
  • Wide operating temperature range from -55°C to 150°C, ensuring reliability in diverse environments.
  • Low noise and high gain, making it suitable for amplifier and switching applications.

Applications

The 2SC3647T-TD-E transistor is versatile and can be used in a variety of applications, including:

  • Amplifier circuits: Due to its high gain and low noise characteristics.
  • Switching circuits: Benefiting from its high collector current and voltage ratings.
  • Power supplies: For applications requiring reliable and efficient power management.
  • Automotive and industrial control systems: Where high reliability and performance are essential.

Q & A

  1. What is the polarity of the 2SC3647T-TD-E transistor?
    The 2SC3647T-TD-E is an NPN bipolar junction transistor.
  2. What is the maximum collector current of the 2SC3647T-TD-E?
    The maximum collector current is 2 A.
  3. What is the package type of the 2SC3647T-TD-E?
    The package type is SOT-89.
  4. What is the operating temperature range of the 2SC3647T-TD-E?
    The operating temperature range is from -55°C to 150°C.
  5. What are some common applications of the 2SC3647T-TD-E?
    Common applications include amplifier circuits, switching circuits, power supplies, and automotive and industrial control systems.
  6. What is the maximum collector-emitter voltage of the 2SC3647T-TD-E?
    The maximum collector-emitter voltage is 100 V.
  7. What is the power dissipation of the 2SC3647T-TD-E?
    The power dissipation is 1.25 W.
  8. Is the 2SC3647T-TD-E suitable for high-power applications?
    Yes, it is suitable for high-power applications due to its high collector current and voltage ratings.
  9. Where can I purchase the 2SC3647T-TD-E?
    You can purchase the 2SC3647T-TD-E from distributors such as Mouser, Digi-Key, and Farnell.
  10. What is the material of the 2SC3647T-TD-E transistor?
    The material of the transistor is Silicon (Si).

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 100mA, 1A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 5V
Power - Max:500 mW
Frequency - Transition:120MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:PCP
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$0.61
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Similar Products

Part Number 2SC3647T-TD-E 2SC3648T-TD-E 2SC3649T-TD-E 2SC3646T-TD-E 2SC3647S-TD-E
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Transistor Type NPN NPN NPN NPN NPN
Current - Collector (Ic) (Max) 2 A 700 mA 1.5 A 1 A 2 A
Voltage - Collector Emitter Breakdown (Max) 100 V 160 V 160 V 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 100mA, 1A 400mV @ 25mA, 250mA 450mV @ 50mA, 500mA 400mV @ 40mA, 400mA 400mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 1µA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V 100 @ 100mA, 5V 100 @ 100mA, 5V 100 @ 100mA, 5V 100 @ 100mA, 5V
Power - Max 500 mW 500 mW 500 mW 500 mW 500 mW
Frequency - Transition 120MHz 120MHz 120MHz 120MHz 120MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA
Supplier Device Package PCP PCP PCP PCP PCP

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