2N6488G
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onsemi 2N6488G

Manufacturer No:
2N6488G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 80V 15A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N6488G is a high-performance NPN bipolar power transistor manufactured by onsemi. This transistor is designed for general-purpose amplifier and switching applications. It is part of the 2N6487 and 2N6488 series, which are complementary devices to the PNP transistors 2N6490 and 2N6491. The 2N6488G is known for its high DC current gain, high current gain-bandwidth product, and its compact TO-220AB package, making it suitable for a variety of power management and industrial applications.

Key Specifications

Parameter Value Unit
Polarity NPN
Maximum Collector-Emitter Voltage (Vce) 80 Vdc
Maximum Collector-Base Voltage (Vcb) 90 Vdc
Maximum Emitter-Base Voltage (Veb) 5 Vdc
Maximum Collector Current (Ic) 15 A
Maximum Power Dissipation (Pd) 75 W
Transition Frequency (ft) 5 MHz
Forward Current Transfer Ratio (hFE) 20-150 @ Ic = 5 A, 5 @ Ic = 15 A
Operating Junction Temperature (Tj) -65 to +150 °C
Package Type TO-220AB

Key Features

  • High DC Current Gain: The 2N6488G has a specified DC current gain (hFE) ranging from 20 to 150 at different collector currents, ensuring high performance in amplifier and switching applications.
  • High Current Gain-Bandwidth Product: With a transition frequency (ft) of 5 MHz, this transistor offers a high current gain-bandwidth product, making it suitable for high-frequency applications.
  • Compact TO-220AB Package: The transistor is housed in a TO-220AB package, which is compact and suitable for various power management and industrial applications.
  • Pb-Free and RoHS Compliant: The 2N6488G is available in Pb-free packages and is RoHS compliant, ensuring environmental sustainability and compliance with regulatory standards.

Applications

The 2N6488G is designed for use in various applications, including:

  • General-Purpose Amplifier Applications: Its high DC current gain and high current gain-bandwidth product make it suitable for general-purpose amplifier applications.
  • Switching Applications: The transistor's high collector current and low saturation voltage make it ideal for switching applications in power management systems.
  • Industrial Applications: It is widely used in industrial settings due to its robust performance and reliability in handling high currents and voltages.
  • Power Management: The 2N6488G is used in power management circuits where high current handling and efficient switching are required.

Q & A

  1. What is the maximum collector-emitter voltage of the 2N6488G transistor?

    The maximum collector-emitter voltage (Vce) of the 2N6488G transistor is 80 Vdc.

  2. What is the maximum collector current of the 2N6488G transistor?

    The maximum collector current (Ic) of the 2N6488G transistor is 15 A.

  3. What is the transition frequency (ft) of the 2N6488G transistor?

    The transition frequency (ft) of the 2N6488G transistor is 5 MHz.

  4. What is the operating junction temperature range of the 2N6488G transistor?

    The operating junction temperature range of the 2N6488G transistor is -65 to +150 °C.

  5. Is the 2N6488G transistor Pb-free and RoHS compliant?

    Yes, the 2N6488G transistor is available in Pb-free packages and is RoHS compliant.

  6. What type of package does the 2N6488G transistor use?

    The 2N6488G transistor is housed in a TO-220AB package.

  7. What are the typical applications of the 2N6488G transistor?

    The 2N6488G transistor is typically used in general-purpose amplifier, switching, industrial, and power management applications.

  8. What is the forward current transfer ratio (hFE) of the 2N6488G transistor?

    The forward current transfer ratio (hFE) of the 2N6488G transistor ranges from 20 to 150 at different collector currents.

  9. What is the maximum power dissipation of the 2N6488G transistor?

    The maximum power dissipation (Pd) of the 2N6488G transistor is 75 W.

  10. Are there any complementary devices to the 2N6488G transistor?

    Yes, the complementary devices to the 2N6488G (NPN) transistor are the 2N6490 and 2N6491 (PNP) transistors.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):15 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:3.5V @ 5A, 15A
Current - Collector Cutoff (Max):1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 5A, 4V
Power - Max:1.8 W
Frequency - Transition:5MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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Same Series
2N6487
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TRANS NPN 60V 15A TO220AB
2N6490
2N6490
TRANS PNP 60V 15A TO220AB
2N6491
2N6491
TRANS PNP 80V 15A TO220AB
2N6487G
2N6487G
TRANS NPN 60V 15A TO220
2N6488
2N6488
TRANS NPN 80V 15A TO220
2N6490G
2N6490G
TRANS PNP 60V 15A TO220
2N6488G
2N6488G
TRANS NPN 80V 15A TO220

Similar Products

Part Number 2N6488G 2N6288G 2N6388G 2N6487G 2N6488
Manufacturer onsemi onsemi onsemi onsemi NTE Electronics, Inc
Product Status Active Active Active Active Active
Transistor Type NPN NPN NPN - Darlington NPN NPN
Current - Collector (Ic) (Max) 15 A 7 A 10 A 15 A 15 A
Voltage - Collector Emitter Breakdown (Max) 80 V 30 V 80 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 3.5V @ 5A, 15A 3.5V @ 3A, 7A 3V @ 100mA, 10A 3.5V @ 5A, 15A 3.5V @ 5A, 15A
Current - Collector Cutoff (Max) 1mA 1mA 1mA 1mA 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5A, 4V 30 @ 3A, 4V 1000 @ 5A, 3V 20 @ 5A, 4V 20 @ 5A, 4V
Power - Max 1.8 W 40 W 2 W 1.8 W 1.8 W
Frequency - Transition 5MHz 4MHz - 5MHz 5MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220

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