Overview
The 2N6491G is a 15 A, 80 V PNP Bipolar Power Transistor designed for use in general-purpose amplifier and switching applications. This transistor is part of a family of complementary devices that include the 2N6487, 2N6488 (NPN), and 2N6490, 2N6491 (PNP). It is manufactured by onsemi and is known for its high current gain and bandwidth product, making it suitable for a wide range of applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 80 | Vdc |
| Collector-Base Voltage | VCB | 90 | Vdc |
| Emitter-Base Voltage | VEB | 5.0 | Vdc |
| Collector Current - Continuous | IC | 15 | Adc |
| Base Current | IB | 5.0 | Adc |
| Total Power Dissipation @ TC = 25°C | PD | 75 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | −65 to +150 | °C |
| DC Current Gain @ IC = 5.0 Adc, VCE = 4.0 Vdc | hFE | 20-150 | |
| Collector-Emitter Saturation Voltage @ IC = 5.0 Adc, IB = 0.5 Adc | VCE(sat) | 1.3 | Vdc |
| Base-Emitter On Voltage @ IC = 5.0 Adc, VCE = 4.0 Vdc | VBE(on) | 1.3 | Vdc |
| Current-Gain - Bandwidth Product @ IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 MHz | fT | 5.0 | MHz |
Key Features
- High DC Current Gain: The 2N6491G has a specified DC current gain (hFE) ranging from 20 to 150 at IC = 5.0 Adc and a minimum of 5.0 at IC = 15 Adc.
- High Current Gain - Bandwidth Product: With a minimum current-gain - bandwidth product (fT) of 5.0 MHz at IC = 1.0 Adc, this transistor is suitable for high-frequency applications.
- TO-220 Compact Package: The transistor is packaged in a TO-220AB compact package, which is Pb-free and RoHS compliant.
- High Collector-Emitter Voltage: The 2N6491G has a collector-emitter voltage (VCEO) of 80 Vdc, making it robust for various power applications.
- Low Collector-Emitter Saturation Voltage: The transistor features a low collector-emitter saturation voltage (VCE(sat)) of 1.3 Vdc, which is beneficial for reducing power losses in switching applications.
Applications
The 2N6491G is designed for use in general-purpose amplifier and switching applications. Some common uses include:
- Power Amplifiers: Due to its high current gain and low saturation voltage, it is suitable for power amplifier circuits.
- Switching Circuits: The transistor's high current handling and bandwidth make it ideal for switching applications such as motor control, power supplies, and relay drivers.
- Automotive Systems: Its robustness and high voltage handling capabilities make it a good choice for automotive systems where reliability and performance are critical.
- Industrial Control Systems: It can be used in various industrial control systems that require high current and voltage handling.
Q & A
- What is the collector-emitter voltage rating of the 2N6491G transistor?
The collector-emitter voltage (VCEO) rating of the 2N6491G transistor is 80 Vdc.
- What is the maximum continuous collector current of the 2N6491G?
The maximum continuous collector current (IC) of the 2N6491G is 15 Adc.
- What is the typical DC current gain of the 2N6491G at IC = 5.0 Adc?
The typical DC current gain (hFE) of the 2N6491G at IC = 5.0 Adc is between 20 and 150.
- What is the collector-emitter saturation voltage of the 2N6491G?
The collector-emitter saturation voltage (VCE(sat)) of the 2N6491G is 1.3 Vdc at IC = 5.0 Adc and IB = 0.5 Adc.
- Is the 2N6491G Pb-free and RoHS compliant?
Yes, the 2N6491G is Pb-free and RoHS compliant.
- What is the operating junction temperature range of the 2N6491G?
The operating and storage junction temperature range of the 2N6491G is −65 to +150°C.
- What is the current-gain - bandwidth product of the 2N6491G?
The current-gain - bandwidth product (fT) of the 2N6491G is 5.0 MHz at IC = 1.0 Adc and VCE = 4.0 Vdc.
- In what package is the 2N6491G available?
The 2N6491G is available in a TO-220AB compact package.
- What are some common applications of the 2N6491G transistor?
The 2N6491G is commonly used in general-purpose amplifier and switching applications, including power amplifiers, switching circuits, automotive systems, and industrial control systems.
- How does the 2N6491G handle thermal dissipation?
The 2N6491G has a thermal resistance, junction-to-case (RJC) of 1.67°C/W and junction-to-ambient (RJA) of 70°C/W. It also has specific power derating curves to ensure reliable operation at high temperatures.
