Overview
The 1N4448TR_S00Z is a small signal fast switching diode produced by ON Semiconductor. This diode is designed for high-speed switching applications and is part of the 1N4448 series. It features a DO-35 package and is known for its high conductance and fast recovery time, making it suitable for a variety of electronic circuits.
Key Specifications
| Parameter | Test Condition | Symbol | Value | Unit |
|---|---|---|---|---|
| Repetitive peak reverse voltage | Tamb = 25 °C | VRRM | 100 | V |
| Reverse voltage | Tamb = 25 °C | VR | 75 | V |
| Peak forward surge current | tp = 1 μs | IFSM | 2 | A |
| Repetitive peak forward current | Tamb = 25 °C | IFRM | 500 | mA |
| Forward continuous current | Tamb = 25 °C | IF | 300 | mA |
| Average forward current | VR = 0 | IF(AV) | 150 | mA |
| Power dissipation | l = 4 mm, TL = 45 °C | Ptot | 440 | mW |
| Power dissipation | l = 4 mm, TL ≤ 25 °C | Ptot | 500 | mW |
| Thermal resistance junction to ambient air | l = 4 mm, TL = constant | RthJA | 350 | K/W |
| Junction temperature | Tamb = 25 °C | Tj | 175 | °C |
| Storage temperature range | - | Tstg | -65 to +150 | °C |
| Forward voltage | IF = 5 mA | VF | 0.620 - 0.720 | V |
| Forward voltage | IF = 100 mA | VF | 1 | V |
| Reverse recovery time | - | trr | 4 ns | - |
Key Features
- High-speed switching capability with a reverse recovery time of 4 ns.
- High conductance and low forward voltage drop.
- DO-35 package, suitable for through-hole mounting.
- Repetitive peak reverse voltage (VRRM) of 100 V and reverse voltage (VR) of 75 V.
- Forward continuous current (IF) of 300 mA and average forward current (IF(AV)) of 150 mA.
- Power dissipation of up to 500 mW at ambient temperatures up to 25 °C.
- Thermal resistance junction to ambient air of 350 K/W.
- Junction temperature up to 175 °C and storage temperature range from -65 °C to +150 °C.
- RoHS compliant and lead-free, making it environmentally friendly.
Applications
- High-speed switching circuits.
- General-purpose rectification and switching in electronic devices.
- Audio and video equipment.
- Automotive and industrial control systems.
- Power supplies and DC-DC converters.
- Communication and networking equipment.
Q & A
- What is the maximum repetitive peak reverse voltage of the 1N4448TR_S00Z diode?
The maximum repetitive peak reverse voltage (VRRM) is 100 V.
- What is the forward continuous current rating of this diode?
The forward continuous current (IF) is 300 mA.
- What is the typical forward voltage drop at 5 mA and 100 mA?
The typical forward voltage drop is 0.620 - 0.720 V at 5 mA and 1 V at 100 mA.
- What is the reverse recovery time of the 1N4448TR_S00Z diode?
The reverse recovery time (trr) is 4 ns.
- What is the maximum junction temperature for this diode?
The maximum junction temperature (Tj) is 175 °C.
- Is the 1N4448TR_S00Z diode RoHS compliant?
- What is the storage temperature range for this diode?
The storage temperature range is from -65 °C to +150 °C.
- What is the thermal resistance junction to ambient air for this diode?
The thermal resistance junction to ambient air (RthJA) is 350 K/W.
- What are some common applications of the 1N4448TR_S00Z diode?
- What package type does the 1N4448TR_S00Z diode come in?
