1N4148_S00Z
  • Share:

onsemi 1N4148_S00Z

Manufacturer No:
1N4148_S00Z
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE GEN PURP 100V 200MA DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4148_S00Z is a general-purpose, small signal switching diode manufactured by ON Semiconductor. This diode is part of the 1N4148 series and is widely used in various electronic circuits due to its high switching speed and reliability. It is encapsulated in a hermetically sealed leaded glass package, specifically the DO-35 (SOD27) package, which ensures robustness and durability.

Key Specifications

Parameter Value Unit
Diode Configuration Single
Repetitive Reverse Voltage (Vrrm) Max 100 V
Forward Current (If(AV)) 200 mA
Forward Voltage (Vf) Max 1 V
Reverse Recovery Time (trr) Max 4 ns
Forward Surge Current (Ifsm) Max 4 A (for 1 μs)
Operating Temperature Max 175 °C
Diode Case Style DO-35 (SOD27)
No. of Pins 2
Packaging Ammo Pack
Junction Temperature (Tj) Max 175 °C
Storage Temperature Range -65 to +150 °C

Key Features

  • High Switching Speed: The 1N4148_S00Z diode has a maximum reverse recovery time of 4 ns, making it suitable for high-speed switching applications.
  • General Purpose: This diode is designed for general-purpose use and can be used in a variety of circuits, including those involving transistors, MOSFETs, and bipolar transistors.
  • Hermetically Sealed Package: The diode is encapsulated in a hermetically sealed leaded glass package (DO-35/SOD27), which provides excellent reliability and protection against environmental factors.
  • Low Forward Voltage Drop: The diode has a maximum forward voltage drop of 1 V, ensuring efficient operation in low-voltage circuits.
  • High Peak Current Handling: The diode can handle a non-repetitive peak forward surge current of up to 4 A for 1 μs, making it robust against transient conditions.

Applications

  • High-Speed Switching: The 1N4148_S00Z is ideal for applications requiring fast switching times, such as in digital circuits, signal processing, and high-frequency applications.
  • Gate Circuits: It is commonly used in the gate circuits of transistors, MOSFETs, and bipolar transistors to quickly transfer signals from integrated circuits.
  • Rectifier and Clamping Circuits: The diode can be used in rectifier circuits and as a clamping diode to protect against voltage spikes.
  • General Electronic Circuits: It is suitable for use in various general-purpose electronic circuits where a reliable and fast-switching diode is required.

Q & A

  1. What is the maximum repetitive reverse voltage of the 1N4148_S00Z diode?

    The maximum repetitive reverse voltage (Vrrm) is 100 V.

  2. What is the maximum forward current of the 1N4148_S00Z diode?

    The maximum continuous forward current (If(AV)) is 200 mA.

  3. What is the typical forward voltage drop of the 1N4148_S00Z diode?

    The typical forward voltage drop (Vf) is 1 V.

  4. What is the reverse recovery time of the 1N4148_S00Z diode?

    The maximum reverse recovery time (trr) is 4 ns.

  5. What is the maximum junction temperature of the 1N4148_S00Z diode?

    The maximum junction temperature (Tj) is 175°C.

  6. What type of package does the 1N4148_S00Z diode come in?

    The diode is encapsulated in a hermetically sealed leaded glass package, specifically the DO-35 (SOD27) package.

  7. Is the 1N4148_S00Z diode RoHS compliant?

    Yes, the 1N4148_S00Z diode is RoHS compliant.

  8. What are some common applications of the 1N4148_S00Z diode?

    Common applications include high-speed switching, gate circuits, rectifier and clamping circuits, and general electronic circuits.

  9. Can the 1N4148_S00Z diode handle high peak currents?

    Yes, the diode can handle a non-repetitive peak forward surge current of up to 4 A for 1 μs.

  10. What is the storage temperature range for the 1N4148_S00Z diode?

    The storage temperature range is -65°C to +150°C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 10 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:5 µA @ 75 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
480

Please send RFQ , we will respond immediately.

Same Series
1N914-T50A
1N914-T50A
DIODE GEN PURP 100V 200MA DO35
FDLL4448
FDLL4448
DIODE GEN PURP 100V 200MA SOD80
FDLL914
FDLL914
DIODE GEN PURP 100V 200MA SOD80
FDLL914A
FDLL914A
DIODE GEN PURP 100V 200MA SOD80
1N4148_NT50A
1N4148_NT50A
DIODE GEN PURP 100V 200MA DO35
1N4148_S00Z
1N4148_S00Z
DIODE GEN PURP 100V 200MA DO35
1N4148_T26R
1N4148_T26R
DIODE GEN PURP 100V 200MA DO35
1N4448_S00Z
1N4448_S00Z
DIODE GEN PURP 100V 200MA DO35
1N4448TR_S00Z
1N4448TR_S00Z
DIODE GEN PURP 100V 200MA DO35
1N914A_T50R
1N914A_T50R
DIODE GEN PURP 100V 200MA DO35
1N916A_T50R
1N916A_T50R
DIODE GEN PURP 100V 200MA DO35
1N916TR
1N916TR
DIODE GEN PURP 100V 200MA DO35

Related Product By Categories

BAS16L-G3-08
BAS16L-G3-08
Vishay General Semiconductor - Diodes Division
SWITCHING DIODE GENPURP DFN1006-
RB751S40T1G
RB751S40T1G
onsemi
DIODE SCHOTTKY 30V 30MA SOD523
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
BAS16-E3-08
BAS16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
NRVTSA4100ET3G
NRVTSA4100ET3G
onsemi
DIODE SCHOTTKY 100V 4A SMA
STTH108A
STTH108A
STMicroelectronics
DIODE GEN PURP 800V 1A SMA
STPS20L15D
STPS20L15D
STMicroelectronics
DIODE SCHOTTKY 15V 20A TO220AC
MBRF40250TG
MBRF40250TG
onsemi
DIODE SCHOTTKY 250V 40A TO220FP
STPSC8H065DI
STPSC8H065DI
STMicroelectronics
DIODE SCHOTTKY 650V 8A TO220AC
BAS21Q-7-F
BAS21Q-7-F
Diodes Incorporated
DIODE GP SW SOT23
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41

Related Product By Brand

ESD9D5.0ST5G
ESD9D5.0ST5G
onsemi
TVS DIODE 5VWM 13.5VC SOD923
SZBZX84C12LT1G
SZBZX84C12LT1G
onsemi
DIODE ZENER 12V 250MW SOT23-3
NJVMJD31T4G
NJVMJD31T4G
onsemi
TRANS NPN 40V 3A DPAK
FDA28N50F
FDA28N50F
onsemi
MOSFET N-CH 500V 28A TO3PN
NTD3055L170-1G
NTD3055L170-1G
onsemi
MOSFET N-CH 60V 9A IPAK
NB3U1548CDR2G
NB3U1548CDR2G
onsemi
IC CLK BUFFER 160MHZ 8SOIC
NLHV4052DTR2G
NLHV4052DTR2G
onsemi
IC MULTIPLEXER DP4T 16TSSOP
LC709203FXE-01MH
LC709203FXE-01MH
onsemi
IC BATT MON LI-ION 1CELL 9WLCSP
STK672-432AN-E
STK672-432AN-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
UC2842BD
UC2842BD
onsemi
IC REG CTRLR PWM CM 14-SOIC
LM2575D2T-5R4
LM2575D2T-5R4
onsemi
IC REG BUCK 5V 1A D2PAK-5
FOD817B3SD
FOD817B3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD