1N4148_S00Z
  • Share:

onsemi 1N4148_S00Z

Manufacturer No:
1N4148_S00Z
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE GEN PURP 100V 200MA DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4148_S00Z is a general-purpose, small signal switching diode manufactured by ON Semiconductor. This diode is part of the 1N4148 series and is widely used in various electronic circuits due to its high switching speed and reliability. It is encapsulated in a hermetically sealed leaded glass package, specifically the DO-35 (SOD27) package, which ensures robustness and durability.

Key Specifications

Parameter Value Unit
Diode Configuration Single
Repetitive Reverse Voltage (Vrrm) Max 100 V
Forward Current (If(AV)) 200 mA
Forward Voltage (Vf) Max 1 V
Reverse Recovery Time (trr) Max 4 ns
Forward Surge Current (Ifsm) Max 4 A (for 1 μs)
Operating Temperature Max 175 °C
Diode Case Style DO-35 (SOD27)
No. of Pins 2
Packaging Ammo Pack
Junction Temperature (Tj) Max 175 °C
Storage Temperature Range -65 to +150 °C

Key Features

  • High Switching Speed: The 1N4148_S00Z diode has a maximum reverse recovery time of 4 ns, making it suitable for high-speed switching applications.
  • General Purpose: This diode is designed for general-purpose use and can be used in a variety of circuits, including those involving transistors, MOSFETs, and bipolar transistors.
  • Hermetically Sealed Package: The diode is encapsulated in a hermetically sealed leaded glass package (DO-35/SOD27), which provides excellent reliability and protection against environmental factors.
  • Low Forward Voltage Drop: The diode has a maximum forward voltage drop of 1 V, ensuring efficient operation in low-voltage circuits.
  • High Peak Current Handling: The diode can handle a non-repetitive peak forward surge current of up to 4 A for 1 μs, making it robust against transient conditions.

Applications

  • High-Speed Switching: The 1N4148_S00Z is ideal for applications requiring fast switching times, such as in digital circuits, signal processing, and high-frequency applications.
  • Gate Circuits: It is commonly used in the gate circuits of transistors, MOSFETs, and bipolar transistors to quickly transfer signals from integrated circuits.
  • Rectifier and Clamping Circuits: The diode can be used in rectifier circuits and as a clamping diode to protect against voltage spikes.
  • General Electronic Circuits: It is suitable for use in various general-purpose electronic circuits where a reliable and fast-switching diode is required.

Q & A

  1. What is the maximum repetitive reverse voltage of the 1N4148_S00Z diode?

    The maximum repetitive reverse voltage (Vrrm) is 100 V.

  2. What is the maximum forward current of the 1N4148_S00Z diode?

    The maximum continuous forward current (If(AV)) is 200 mA.

  3. What is the typical forward voltage drop of the 1N4148_S00Z diode?

    The typical forward voltage drop (Vf) is 1 V.

  4. What is the reverse recovery time of the 1N4148_S00Z diode?

    The maximum reverse recovery time (trr) is 4 ns.

  5. What is the maximum junction temperature of the 1N4148_S00Z diode?

    The maximum junction temperature (Tj) is 175°C.

  6. What type of package does the 1N4148_S00Z diode come in?

    The diode is encapsulated in a hermetically sealed leaded glass package, specifically the DO-35 (SOD27) package.

  7. Is the 1N4148_S00Z diode RoHS compliant?

    Yes, the 1N4148_S00Z diode is RoHS compliant.

  8. What are some common applications of the 1N4148_S00Z diode?

    Common applications include high-speed switching, gate circuits, rectifier and clamping circuits, and general electronic circuits.

  9. Can the 1N4148_S00Z diode handle high peak currents?

    Yes, the diode can handle a non-repetitive peak forward surge current of up to 4 A for 1 μs.

  10. What is the storage temperature range for the 1N4148_S00Z diode?

    The storage temperature range is -65°C to +150°C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 10 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:5 µA @ 75 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
480

Please send RFQ , we will respond immediately.

Same Series
1N914TR
1N914TR
DIODE GEN PURP 100V 200MA DO35
1N914-T50A
1N914-T50A
DIODE GEN PURP 100V 200MA DO35
1N914B
1N914B
DIODE GEN PURP 100V 200MA DO35
1N916
1N916
DIODE GEN PURP 100V 200MA DO35
FDLL4448
FDLL4448
DIODE GEN PURP 100V 200MA SOD80
FDLL914B
FDLL914B
DIODE GEN PURP 100V 200MA SOD80
FDLL4148-D87Z
FDLL4148-D87Z
DIODE GEN PURP 100V 200MA SOD80
1N4148-T50A
1N4148-T50A
DIODE GEN PURP 100V 200MA DO35
1N4148_S62Z
1N4148_S62Z
DIODE GEN PURP 100V 200MA DO35
1N4448TR_S00Z
1N4448TR_S00Z
DIODE GEN PURP 100V 200MA DO35
1N914B_S62Z
1N914B_S62Z
DIODE GEN PURP 100V 200MA DO35
1N914TR_S00Z
1N914TR_S00Z
DIODE GEN PURP 100V 200MA DO35

Related Product By Categories

PMEG2010EA,115
PMEG2010EA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
STPS20SM100ST
STPS20SM100ST
STMicroelectronics
DIODE SCHOTTKY 100V 20A TO220AB
S110FA
S110FA
onsemi
DIODE SCHOTTKY 100V 1A SOD123FA
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
FFSB10120A-F085
FFSB10120A-F085
onsemi
1200V 10A AUTO SIC SBD
BAT54-D87Z
BAT54-D87Z
onsemi
30V SOT23 SCHOTTKY DIODE
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB
BAT54T-HF
BAT54T-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23
BAS316/ZLF
BAS316/ZLF
NXP USA Inc.
DIODE GEN PURP 100V 215MA SOD323

Related Product By Brand

NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
NTB6413ANG
NTB6413ANG
onsemi
MOSFET N-CH 100V 42A D2PAK
ISL9V5036S3ST_SB82026C
ISL9V5036S3ST_SB82026C
onsemi
INTEGRATED CIRCUIT
NCV33274ADR2G
NCV33274ADR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
MC33072ADG
MC33072ADG
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
MC74ACT541DTR2G
MC74ACT541DTR2G
onsemi
IC BUF NON-INVERT 5.5V 20TSSOP
NLV17SZU04DFT2G
NLV17SZU04DFT2G
onsemi
IC INVERTER 1CH 1-INP SC88A
LM2575D2T-5R4
LM2575D2T-5R4
onsemi
IC REG BUCK 5V 1A D2PAK-5
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3
NCV86601BDT50RKG
NCV86601BDT50RKG
onsemi
IC REG LINEAR 5V 150MA DPAK-5
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD