1N4148_S00Z
  • Share:

onsemi 1N4148_S00Z

Manufacturer No:
1N4148_S00Z
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE GEN PURP 100V 200MA DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4148_S00Z is a general-purpose, small signal switching diode manufactured by ON Semiconductor. This diode is part of the 1N4148 series and is widely used in various electronic circuits due to its high switching speed and reliability. It is encapsulated in a hermetically sealed leaded glass package, specifically the DO-35 (SOD27) package, which ensures robustness and durability.

Key Specifications

Parameter Value Unit
Diode Configuration Single
Repetitive Reverse Voltage (Vrrm) Max 100 V
Forward Current (If(AV)) 200 mA
Forward Voltage (Vf) Max 1 V
Reverse Recovery Time (trr) Max 4 ns
Forward Surge Current (Ifsm) Max 4 A (for 1 μs)
Operating Temperature Max 175 °C
Diode Case Style DO-35 (SOD27)
No. of Pins 2
Packaging Ammo Pack
Junction Temperature (Tj) Max 175 °C
Storage Temperature Range -65 to +150 °C

Key Features

  • High Switching Speed: The 1N4148_S00Z diode has a maximum reverse recovery time of 4 ns, making it suitable for high-speed switching applications.
  • General Purpose: This diode is designed for general-purpose use and can be used in a variety of circuits, including those involving transistors, MOSFETs, and bipolar transistors.
  • Hermetically Sealed Package: The diode is encapsulated in a hermetically sealed leaded glass package (DO-35/SOD27), which provides excellent reliability and protection against environmental factors.
  • Low Forward Voltage Drop: The diode has a maximum forward voltage drop of 1 V, ensuring efficient operation in low-voltage circuits.
  • High Peak Current Handling: The diode can handle a non-repetitive peak forward surge current of up to 4 A for 1 μs, making it robust against transient conditions.

Applications

  • High-Speed Switching: The 1N4148_S00Z is ideal for applications requiring fast switching times, such as in digital circuits, signal processing, and high-frequency applications.
  • Gate Circuits: It is commonly used in the gate circuits of transistors, MOSFETs, and bipolar transistors to quickly transfer signals from integrated circuits.
  • Rectifier and Clamping Circuits: The diode can be used in rectifier circuits and as a clamping diode to protect against voltage spikes.
  • General Electronic Circuits: It is suitable for use in various general-purpose electronic circuits where a reliable and fast-switching diode is required.

Q & A

  1. What is the maximum repetitive reverse voltage of the 1N4148_S00Z diode?

    The maximum repetitive reverse voltage (Vrrm) is 100 V.

  2. What is the maximum forward current of the 1N4148_S00Z diode?

    The maximum continuous forward current (If(AV)) is 200 mA.

  3. What is the typical forward voltage drop of the 1N4148_S00Z diode?

    The typical forward voltage drop (Vf) is 1 V.

  4. What is the reverse recovery time of the 1N4148_S00Z diode?

    The maximum reverse recovery time (trr) is 4 ns.

  5. What is the maximum junction temperature of the 1N4148_S00Z diode?

    The maximum junction temperature (Tj) is 175°C.

  6. What type of package does the 1N4148_S00Z diode come in?

    The diode is encapsulated in a hermetically sealed leaded glass package, specifically the DO-35 (SOD27) package.

  7. Is the 1N4148_S00Z diode RoHS compliant?

    Yes, the 1N4148_S00Z diode is RoHS compliant.

  8. What are some common applications of the 1N4148_S00Z diode?

    Common applications include high-speed switching, gate circuits, rectifier and clamping circuits, and general electronic circuits.

  9. Can the 1N4148_S00Z diode handle high peak currents?

    Yes, the diode can handle a non-repetitive peak forward surge current of up to 4 A for 1 μs.

  10. What is the storage temperature range for the 1N4148_S00Z diode?

    The storage temperature range is -65°C to +150°C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 10 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:5 µA @ 75 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
480

Please send RFQ , we will respond immediately.

Same Series
1N914-T50A
1N914-T50A
DIODE GEN PURP 100V 200MA DO35
FDLL4148
FDLL4148
DIODE GEN PURP 100V 200MA SOD80
FDLL4448-D87Z
FDLL4448-D87Z
DIODE GEN PURP 100V 200MA LL34
FDLL914
FDLL914
DIODE GEN PURP 100V 200MA SOD80
1N4148_NT50A
1N4148_NT50A
DIODE GEN PURP 100V 200MA DO35
1N4148_S00Z
1N4148_S00Z
DIODE GEN PURP 100V 200MA DO35
1N914_T26A
1N914_T26A
DIODE GEN PURP 100V 200MA DO35
1N914_T50R
1N914_T50R
DIODE GEN PURP 100V 200MA DO35
1N914B_T50A
1N914B_T50A
DIODE GEN PURP 100V 200MA DO35
1N914B_T50R
1N914B_T50R
DIODE GEN PURP 100V 200MA DO35
1N914TR_S00Z
1N914TR_S00Z
DIODE GEN PURP 100V 200MA DO35
1N916_T50R
1N916_T50R
DIODE GEN PURP 100V 200MA DO35

Related Product By Categories

BAS16THVL
BAS16THVL
Nexperia USA Inc.
BAS16TH/SOT23/TO-236AB
BAS16-E3-08
BAS16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
STPS5L60SY
STPS5L60SY
STMicroelectronics
DIODE SCHOTTKY 60V 5A SMC
BAS21WQ-7-F
BAS21WQ-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
PMEG4010ER-QX
PMEG4010ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
NRVBA210LNT3G
NRVBA210LNT3G
onsemi
DIODE SCHOTTKY 2A 10V SMA2
BAV21W-7
BAV21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
BAS16XV2T1
BAS16XV2T1
onsemi
DIODE SWITCH 200MA 75V SOD523
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
SS16HE3/61T
SS16HE3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 1A DO214AC
1N4001GPHE3/54
1N4001GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD

Related Product By Brand

BAV70_D87Z
BAV70_D87Z
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
SZMMBZ5226BLT1G
SZMMBZ5226BLT1G
onsemi
DIODE ZENER 3.3V 225MW SOT23-3
MMSZ5233BT1G
MMSZ5233BT1G
onsemi
DIODE ZENER 6V 500MW SOD123
MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
NJW21193G
NJW21193G
onsemi
TRANS PNP 250V 16A TO3P-3L
DTC114TM3T5G
DTC114TM3T5G
onsemi
TRANS PREBIAS NPN 50V SOT723
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
MC74HCT125ADR2G
MC74HCT125ADR2G
onsemi
IC BUFFER NON-INVERT 6V 14SOIC
M74VHC1GT04DFT1G
M74VHC1GT04DFT1G
onsemi
IC INVERTER 1CH 1-INP SC88A
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
NCP1566MNTXG
NCP1566MNTXG
onsemi
IC PWM CTLR ACT CLAMP 24QFN
FODM217CR2V
FODM217CR2V
onsemi
OPTOCOUPLER PHOTOTRANS MFP4