1N4148_S00Z
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onsemi 1N4148_S00Z

Manufacturer No:
1N4148_S00Z
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE GEN PURP 100V 200MA DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4148_S00Z is a general-purpose, small signal switching diode manufactured by ON Semiconductor. This diode is part of the 1N4148 series and is widely used in various electronic circuits due to its high switching speed and reliability. It is encapsulated in a hermetically sealed leaded glass package, specifically the DO-35 (SOD27) package, which ensures robustness and durability.

Key Specifications

Parameter Value Unit
Diode Configuration Single
Repetitive Reverse Voltage (Vrrm) Max 100 V
Forward Current (If(AV)) 200 mA
Forward Voltage (Vf) Max 1 V
Reverse Recovery Time (trr) Max 4 ns
Forward Surge Current (Ifsm) Max 4 A (for 1 μs)
Operating Temperature Max 175 °C
Diode Case Style DO-35 (SOD27)
No. of Pins 2
Packaging Ammo Pack
Junction Temperature (Tj) Max 175 °C
Storage Temperature Range -65 to +150 °C

Key Features

  • High Switching Speed: The 1N4148_S00Z diode has a maximum reverse recovery time of 4 ns, making it suitable for high-speed switching applications.
  • General Purpose: This diode is designed for general-purpose use and can be used in a variety of circuits, including those involving transistors, MOSFETs, and bipolar transistors.
  • Hermetically Sealed Package: The diode is encapsulated in a hermetically sealed leaded glass package (DO-35/SOD27), which provides excellent reliability and protection against environmental factors.
  • Low Forward Voltage Drop: The diode has a maximum forward voltage drop of 1 V, ensuring efficient operation in low-voltage circuits.
  • High Peak Current Handling: The diode can handle a non-repetitive peak forward surge current of up to 4 A for 1 μs, making it robust against transient conditions.

Applications

  • High-Speed Switching: The 1N4148_S00Z is ideal for applications requiring fast switching times, such as in digital circuits, signal processing, and high-frequency applications.
  • Gate Circuits: It is commonly used in the gate circuits of transistors, MOSFETs, and bipolar transistors to quickly transfer signals from integrated circuits.
  • Rectifier and Clamping Circuits: The diode can be used in rectifier circuits and as a clamping diode to protect against voltage spikes.
  • General Electronic Circuits: It is suitable for use in various general-purpose electronic circuits where a reliable and fast-switching diode is required.

Q & A

  1. What is the maximum repetitive reverse voltage of the 1N4148_S00Z diode?

    The maximum repetitive reverse voltage (Vrrm) is 100 V.

  2. What is the maximum forward current of the 1N4148_S00Z diode?

    The maximum continuous forward current (If(AV)) is 200 mA.

  3. What is the typical forward voltage drop of the 1N4148_S00Z diode?

    The typical forward voltage drop (Vf) is 1 V.

  4. What is the reverse recovery time of the 1N4148_S00Z diode?

    The maximum reverse recovery time (trr) is 4 ns.

  5. What is the maximum junction temperature of the 1N4148_S00Z diode?

    The maximum junction temperature (Tj) is 175°C.

  6. What type of package does the 1N4148_S00Z diode come in?

    The diode is encapsulated in a hermetically sealed leaded glass package, specifically the DO-35 (SOD27) package.

  7. Is the 1N4148_S00Z diode RoHS compliant?

    Yes, the 1N4148_S00Z diode is RoHS compliant.

  8. What are some common applications of the 1N4148_S00Z diode?

    Common applications include high-speed switching, gate circuits, rectifier and clamping circuits, and general electronic circuits.

  9. Can the 1N4148_S00Z diode handle high peak currents?

    Yes, the diode can handle a non-repetitive peak forward surge current of up to 4 A for 1 μs.

  10. What is the storage temperature range for the 1N4148_S00Z diode?

    The storage temperature range is -65°C to +150°C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 10 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:5 µA @ 75 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
Operating Temperature - Junction:-55°C ~ 175°C
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