PHPT60415PY115
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NXP USA Inc. PHPT60415PY115

Manufacturer No:
PHPT60415PY115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
POWER BIPOLAR TRANSISTOR, PNP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PHPT60415PY115 is a high-power bipolar transistor produced by NXP USA Inc. This PNP transistor is designed to operate at high voltages and currents, making it suitable for a variety of power management and high-energy applications. It is packaged in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package, which offers high thermal power dissipation capability and reduced Printed Circuit Board (PCB) requirements compared to transistors in DPAK packages.

Key Specifications

ParameterConditionsMinTypMaxUnit
Collector-Base Voltage (VCBO)Open Emitter---40V
Collector-Emitter Voltage (VCEO)Open Base---40V
Emitter-Base Voltage (VEBO)Open Collector---8V
Collector Current (IC)----15A
Peak Collector Current (ICM)Single Pulse; tp ≤ 1 ms---30A
Base Current (IB)----1.5A
Peak Base Current (IBM)Pulsed; tp ≤ 1 ms---3A
Total Power Dissipation (Ptot)Tamb ≤ 25 °C---25W
Junction Temperature (Tj)---175°C
Ambient Temperature (Tamb)--55-175°C
Storage Temperature (Tstg)--65-175°C

Key Features

  • High-power bipolar transistor with a maximum collector-emitter voltage of 40 V and a maximum collector current of 15 A.
  • PNP type in SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
  • High thermal power dissipation capability.
  • Suitable for high temperature applications up to 175 °C.
  • Reduced PCB requirements compared to transistors in DPAK packages.
  • High energy efficiency due to less heat generation.
  • AEC-Q101 qualified, making it suitable for automotive applications.

Applications

  • Power management.
  • Load switch.
  • Linear mode voltage regulator.
  • Backlighting applications.
  • Motor drive.
  • Relay replacement.

Q & A

  1. What is the maximum collector-emitter voltage of the PHPT60415PY115?
    The maximum collector-emitter voltage is 40 V.
  2. What is the maximum collector current of the PHPT60415PY115?
    The maximum collector current is 15 A.
  3. What package type is used for the PHPT60415PY115?
    The transistor is packaged in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
  4. What is the junction temperature range for the PHPT60415PY115?
    The junction temperature range is from -55 °C to 175 °C.
  5. Is the PHPT60415PY115 AEC-Q101 qualified?
  6. What are some common applications of the PHPT60415PY115?
  7. What is the storage temperature range for the PHPT60415PY115?
    The storage temperature range is from -65 °C to 175 °C.
  8. How does the PHPT60415PY115 compare to transistors in DPAK packages in terms of PCB requirements?
  9. What is the peak base current for the PHPT60415PY115?
    The peak base current is -3 A when pulsed with tp ≤ 1 ms.
  10. What is the total power dissipation for the PHPT60415PY115 at ambient temperatures up to 25 °C?
    The total power dissipation is up to 25 W at ambient temperatures up to 25 °C.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number PHPT60415PY115 PHPT60410PY115 PHPT60415NY115 PHPT60415PY,115
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
Transistor Type - - - -
Current - Collector (Ic) (Max) - - - -
Voltage - Collector Emitter Breakdown (Max) - - - -
Vce Saturation (Max) @ Ib, Ic - - - -
Current - Collector Cutoff (Max) - - - -
DC Current Gain (hFE) (Min) @ Ic, Vce - - - -
Power - Max - - - -
Frequency - Transition - - - -
Operating Temperature - - - -
Mounting Type - - - -
Package / Case - - - -
Supplier Device Package - - - -

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