Overview
The PDTC114EE,115 is a pre-biased NPN silicon transistor produced by NXP USA Inc. This transistor is designed for general-purpose switching and amplification applications in digital circuits. It features built-in bias resistors, which simplify circuit design and reduce the component count, thereby lowering pick and place costs. The PDTC114EE,115 is widely used in automotive, industrial, and consumer electronics where protection of sensitive circuitry from transient voltage spikes is essential.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Transistor Type | NPN - Pre-Biased | - |
Voltage - Collector Emitter Breakdown (Max) | 50 | V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA | - |
Current - Collector (Ic) (Max) | 100 | mA |
Power - Max | 150 | mW |
Resistor - Emitter Base (R2) (Ohms) | 10k | - |
Resistor - Base (R1) (Ohms) | 10k | - |
Frequency - Transition | 230 | MHz |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V | - |
Package / Case | SC-75, SOT-416 | - |
Mounting Type | Surface Mount | - |
Key Features
- Built-in bias resistors, simplifying circuit design and reducing component count.
- Reduction of pick and place costs due to the integrated resistors.
- High current sink capability.
- Low collector-emitter saturation voltage.
- High DC current gain (hFE).
- Surface-mount SC-75 (SOT-416) package, suitable for automated placement.
Applications
The PDTC114EE,115 is commonly used in various applications, including:
- Automotive electronics for protection against transient voltage spikes.
- Industrial electronics for general-purpose switching and amplification.
- Consumer electronics for ESD protection, overvoltage protection, and voltage clamping.
Q & A
- Q: What is the maximum collector current of the PDTC114EE,115?
A: The maximum collector current is 100 mA.
- Q: What is the maximum collector-emitter voltage of the PDTC114EE,115?
A: The maximum collector-emitter voltage is 50 V.
- Q: What type of package does the PDTC114EE,115 come in?
A: It comes in a surface-mount SC-75 (SOT-416) package.
- Q: What are the built-in resistors in the PDTC114EE,115?
A: The PDTC114EE,115 has built-in emitter-base and base resistors, both 10 kΩ.
- Q: What is the transition frequency of the PDTC114EE,115?
A: The transition frequency is 230 MHz.
- Q: What is the DC current gain (hFE) of the PDTC114EE,115?
A: The minimum DC current gain (hFE) is 30 at 5 mA and 5 V.
- Q: What are the typical applications of the PDTC114EE,115?
A: It is used in automotive, industrial, and consumer electronics for switching, amplification, ESD protection, overvoltage protection, and voltage clamping.
- Q: Is the PDTC114EE,115 RoHS compliant?
A: Yes, the PDTC114EE,115 is RoHS compliant.
- Q: How can I obtain detailed information about the PDTC114EE,115, such as datasheets and application notes?
A: You can find comprehensive details, including datasheets and application notes, on the official NXP Semiconductors website or through authorized distributors like Ovaga Technologies and Ariat-Tech.
- Q: What is the warranty period for the PDTC114EE,115?
A: The warranty period is typically 1 year, covering defects in materials and workmanship under normal use.