PDTC114EE/DG115
  • Share:

NXP USA Inc. PDTC114EE/DG115

Manufacturer No:
PDTC114EE/DG115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PDTC114EE,115 is a pre-biased NPN silicon transistor produced by NXP USA Inc. This transistor is designed for general-purpose switching and amplification applications in digital circuits. It features built-in bias resistors, which simplify circuit design and reduce the component count, thereby lowering pick and place costs. The PDTC114EE,115 is widely used in automotive, industrial, and consumer electronics where protection of sensitive circuitry from transient voltage spikes is essential.

Key Specifications

Parameter Value Unit
Transistor Type NPN - Pre-Biased -
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA -
Current - Collector (Ic) (Max) 100 mA
Power - Max 150 mW
Resistor - Emitter Base (R2) (Ohms) 10k -
Resistor - Base (R1) (Ohms) 10k -
Frequency - Transition 230 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V -
Package / Case SC-75, SOT-416 -
Mounting Type Surface Mount -

Key Features

  • Built-in bias resistors, simplifying circuit design and reducing component count.
  • Reduction of pick and place costs due to the integrated resistors.
  • High current sink capability.
  • Low collector-emitter saturation voltage.
  • High DC current gain (hFE).
  • Surface-mount SC-75 (SOT-416) package, suitable for automated placement.

Applications

The PDTC114EE,115 is commonly used in various applications, including:

  • Automotive electronics for protection against transient voltage spikes.
  • Industrial electronics for general-purpose switching and amplification.
  • Consumer electronics for ESD protection, overvoltage protection, and voltage clamping.

Q & A

  1. Q: What is the maximum collector current of the PDTC114EE,115?

    A: The maximum collector current is 100 mA.

  2. Q: What is the maximum collector-emitter voltage of the PDTC114EE,115?

    A: The maximum collector-emitter voltage is 50 V.

  3. Q: What type of package does the PDTC114EE,115 come in?

    A: It comes in a surface-mount SC-75 (SOT-416) package.

  4. Q: What are the built-in resistors in the PDTC114EE,115?

    A: The PDTC114EE,115 has built-in emitter-base and base resistors, both 10 kΩ.

  5. Q: What is the transition frequency of the PDTC114EE,115?

    A: The transition frequency is 230 MHz.

  6. Q: What is the DC current gain (hFE) of the PDTC114EE,115?

    A: The minimum DC current gain (hFE) is 30 at 5 mA and 5 V.

  7. Q: What are the typical applications of the PDTC114EE,115?

    A: It is used in automotive, industrial, and consumer electronics for switching, amplification, ESD protection, overvoltage protection, and voltage clamping.

  8. Q: Is the PDTC114EE,115 RoHS compliant?

    A: Yes, the PDTC114EE,115 is RoHS compliant.

  9. Q: How can I obtain detailed information about the PDTC114EE,115, such as datasheets and application notes?

    A: You can find comprehensive details, including datasheets and application notes, on the official NXP Semiconductors website or through authorized distributors like Ovaga Technologies and Ariat-Tech.

  10. Q: What is the warranty period for the PDTC114EE,115?

    A: The warranty period is typically 1 year, covering defects in materials and workmanship under normal use.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
445

Please send RFQ , we will respond immediately.

Same Series
DD15S20JVL0/AA
DD15S20JVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV50/AA
DD15S20LV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVLX
DD15S20LVLX
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WES/AA
DD15S20WES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HT20/AA
CBC13W3S10HT20/AA
CONN D-SUB RCPT 13POS CRIMP
DD26M20HE0/AA
DD26M20HE0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26M20HE30/AA
DD26M20HE30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S10HE2X/AA
DD26S10HE2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD44S32S500X
DD44S32S500X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60TX/AA
DD44S32S60TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number PDTC114EE/DG115 PDTA114EE/DG115
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Transistor Type - -
Current - Collector (Ic) (Max) - -
Voltage - Collector Emitter Breakdown (Max) - -
Vce Saturation (Max) @ Ib, Ic - -
Current - Collector Cutoff (Max) - -
DC Current Gain (hFE) (Min) @ Ic, Vce - -
Power - Max - -
Frequency - Transition - -
Operating Temperature - -
Mounting Type - -
Package / Case - -
Supplier Device Package - -

Related Product By Categories

TIP35CW
TIP35CW
STMicroelectronics
TRANS NPN 100V 25A TO247-3
BCP56-10
BCP56-10
Diotec Semiconductor
TRANS NPN 80V 1A SOT223
MMBT5088LT1G
MMBT5088LT1G
onsemi
TRANS NPN 30V 0.05A SOT23-3
MMBT2907ALT1G
MMBT2907ALT1G
onsemi
TRANS PNP 60V 0.6A SOT23-3
SMMBT2222ALT3G
SMMBT2222ALT3G
onsemi
TRANS NPN 40V 0.6A SOT23-3
BD140G
BD140G
onsemi
TRANS PNP 80V 1.5A TO126
BLF278
BLF278
Ampleon USA Inc.
RF PFET, 2-ELEMENT, VERY HIGH FR
BC856AQBZ
BC856AQBZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BCX5616QTC
BCX5616QTC
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT89 T&
MMBT3904T-7
MMBT3904T-7
Diodes Incorporated
TRANS NPN 40V 0.2A SOT523
BC859CLT1
BC859CLT1
onsemi
TRANS PNP 30V 0.1A SOT23-3
BC846B/DG/B4R
BC846B/DG/B4R
Nexperia USA Inc.
TRANS NPN 65V 0.1A TO236AB

Related Product By Brand

BAP51-02,315
BAP51-02,315
NXP USA Inc.
RF DIODE PIN 60V 715MW SOD523
BAS56/DG/B2215
BAS56/DG/B2215
NXP USA Inc.
BAS56 - RECTIFIER DIODE
PMEG4030ER/DG/B2,1
PMEG4030ER/DG/B2,1
NXP USA Inc.
PMEG4030ER/DG/B2,1
BB178,335
BB178,335
NXP USA Inc.
DIODE VHF VAR CAP 32V SOD523
A2T18H455W23NR6
A2T18H455W23NR6
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
BUK98150-55A,135
BUK98150-55A,135
NXP USA Inc.
MOSFET N-CH 55V 5.5A SOT-223
IP4786CZ32518
IP4786CZ32518
NXP USA Inc.
IP4786CZ32S - CONSUMER CIRCUIT
74HC240D/C118
74HC240D/C118
NXP USA Inc.
IC BUFFER INVERT 6V 20SO
PCA9420UKZ
PCA9420UKZ
NXP USA Inc.
POWER MANAGEMENT IC FOR LOW-POWE
MMPF0200NPAZES
MMPF0200NPAZES
NXP USA Inc.
IC REG CONV I.MX6 11OUT 56QFN
MMDS09254HT1
MMDS09254HT1
NXP USA Inc.
ADVANCED DOHERTY ALIGNMENT MODUL
MPXAZ6115AP
MPXAZ6115AP
NXP USA Inc.
PRESSURE SENSOR ABSOLUTE 8-SOP