Overview
The BUK9Y59-60E/GFX is a high-performance N-channel MOSFET produced by NXP USA Inc. This device is part of the TrenchMOS technology family and is packaged in the LFPAK56 (Power SO8) package. It is designed to offer excellent electrical and thermal performance, making it suitable for a variety of applications, particularly in the automotive sector. The MOSFET is automotive qualified, ensuring reliability and durability in demanding environments.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Vds - Drain-Source Breakdown Voltage | 60 | V |
| Id - Continuous Drain Current | 16.7 | A |
| Rds On - Drain-Source Resistance | 59 | mΩ |
| Vgs - Gate-Source Threshold Voltage | 1 to 2.5 | V |
| Package | LFPAK56 (Power SO8) |
Key Features
- TrenchMOS Technology: Offers low on-state resistance and high current handling capabilities.
- Logic Level Gate Drive: Compatible with standard logic levels, making it easy to integrate into various systems.
- Automotive Qualified: Meets stringent automotive standards for reliability and performance.
- LFPAK56 Package: Provides excellent thermal performance and a compact footprint.
- Electrothermal Model: Available for detailed thermal and electrical simulations.
Applications
- Automotive Systems: Suitable for use in automotive applications such as power steering, braking systems, and other high-power electronic controls.
- Industrial Power Systems: Used in industrial power supplies, motor control, and other high-current applications.
- Consumer Electronics: Can be used in high-power consumer electronics such as power adapters and battery chargers.
Q & A
- What is the drain-source breakdown voltage of the BUK9Y59-60E/GFX MOSFET?
The drain-source breakdown voltage is 60 V.
- What is the continuous drain current rating of this MOSFET?
The continuous drain current rating is 16.7 A.
- What is the typical on-state resistance (Rds On) of the BUK9Y59-60E/GFX?
The typical on-state resistance is 59 mΩ.
- In what package is the BUK9Y59-60E/GFX MOSFET available?
The MOSFET is available in the LFPAK56 (Power SO8) package.
- Is the BUK9Y59-60E/GFX MOSFET automotive qualified?
Yes, it is automotive qualified.
- What technology is used in the BUK9Y59-60E/GFX MOSFET?
The MOSFET uses TrenchMOS technology.
- What are some common applications for the BUK9Y59-60E/GFX MOSFET?
Common applications include automotive systems, industrial power systems, and high-power consumer electronics.
- What is the gate-source threshold voltage range for this MOSFET?
The gate-source threshold voltage range is 1 to 2.5 V.
- Is an electrothermal model available for the BUK9Y59-60E/GFX MOSFET?
Yes, an electrothermal model is available for detailed simulations.
- Why is the LFPAK56 package beneficial for this MOSFET?
The LFPAK56 package provides excellent thermal performance and a compact footprint.
