Overview
The BUK9Y3R0-40E is a logic level N-channel MOSFET designed and manufactured by Nexperia. This component is packaged in the LFPAK56 (Power SO8) package and utilizes TrenchMOS technology. It is specifically qualified to the AEC-Q101 standard, making it suitable for high-performance automotive applications. The MOSFET is known for its ultra-high performance power switching capabilities and is designed to handle thermally demanding environments with a maximum junction temperature of 175 °C.
Key Specifications
| Parameter | Value |
|---|---|
| Type Number | BUK9Y3R0-40E |
| Package | LFPAK56 (Power SO8) - SOT669 |
| Channel Type | N-channel |
| VDS [max] | 40 V |
| RDSon [max] @ VGS = 10 V | 2.5 mΩ |
| RDSon [max] @ VGS = 5 V | 3.0 mΩ |
| Tj [max] | 175 °C |
| ID [max] | 100 A |
| QGD [typ] | 10.7 nC |
| Ptot [max] | 194 W |
| Qr [typ] | 25 nC |
| VGSth [typ] | 1.7 V |
| Automotive Qualified | Yes (AEC-Q101) |
Key Features
- AEC-Q101 Compliant: Qualified for use in high-performance automotive applications.
- Repetitive Avalanche Rated: Ensures robustness against repetitive avalanche conditions.
- High Temperature Rating: Maximum junction temperature of 175 °C, suitable for thermally demanding environments.
- True Logic Level Gate: VGS(th) rating greater than 0.5 V at 175 °C.
- Ultra High Performance Power Switching: Ideal for applications requiring high efficiency and reliability.
Applications
- Automotive Systems: Suitable for 12 V automotive systems.
- Motor Control: Used in motor, lighting, and solenoid control applications.
- Start-Stop Micro-Hybrid Applications: Ideal for start-stop micro-hybrid systems.
- Transmission Control: Used in transmission control systems.
Q & A
- What is the maximum drain-source voltage (VDS) of the BUK9Y3R0-40E?
The maximum drain-source voltage (VDS) is 40 V.
- What is the typical on-resistance (RDSon) at VGS = 5 V?
The typical on-resistance (RDSon) at VGS = 5 V is 3.0 mΩ.
- What is the maximum junction temperature (Tj) of the BUK9Y3R0-40E?
The maximum junction temperature (Tj) is 175 °C.
- Is the BUK9Y3R0-40E qualified for automotive applications?
Yes, it is qualified to the AEC-Q101 standard for use in high-performance automotive applications.
- What is the typical gate-source threshold voltage (VGSth)?
The typical gate-source threshold voltage (VGSth) is 1.7 V.
- What package type is used for the BUK9Y3R0-40E?
The BUK9Y3R0-40E is packaged in the LFPAK56 (Power SO8) package.
- What are some common applications of the BUK9Y3R0-40E?
Common applications include 12 V automotive systems, motor control, start-stop micro-hybrid systems, and transmission control.
- Does the BUK9Y3R0-40E have repetitive avalanche rating?
Yes, it is repetitive avalanche rated.
- What is the maximum continuous drain current (ID) of the BUK9Y3R0-40E?
The maximum continuous drain current (ID) is 100 A.
- How does the BUK9Y3R0-40E perform in thermally demanding environments?
The MOSFET is designed to handle thermally demanding environments with a maximum junction temperature of 175 °C.
