BUK9Y3R0-40E/CX
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NXP USA Inc. BUK9Y3R0-40E/CX

Manufacturer No:
BUK9Y3R0-40E/CX
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH LFPAK
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The BUK9Y3R0-40E/CX, produced by NXP USA Inc. (now known as Nexperia), is a high-performance N-channel MOSFET designed for demanding automotive and industrial applications. This device utilizes TrenchMOS technology and is packaged in the LFPAK56 (Power SO8) format. It is AEC-Q101 compliant, ensuring its suitability for high-reliability automotive systems. The MOSFET features a low on-resistance of 3.0 mΩ and a maximum drain-source voltage of 40 V, making it ideal for applications requiring efficient power switching and control.

Key Specifications

Parameter Value Unit
Type Number BUK9Y3R0-40E -
Package LFPAK56; Power-SO8 (SOT669) -
Channel Type N-channel -
Number of Transistors 1 -
VDS (max) 40 V
RDSon (max) @ VGS = 10 V 2.5
RDSon (max) @ VGS = 5 V 3.0
Tj (max) 175 °C
ID (max) 100 A
QGD (typ) 10.7 nC
Ptot (max) 194 W
Qr (typ) 25 nC
VGSth (typ) 1.7 V
Automotive Qualified Yes -
Ciss (typ) 4471 pF
Coss (typ) 563 pF

Key Features

  • AEC-Q101 Compliant: Designed and qualified to meet the stringent requirements of the automotive industry.
  • Low On-Resistance: 3.0 mΩ at VGS = 5 V, ensuring high efficiency in power switching applications.
  • High Temperature Rating: Maximum junction temperature of 175 °C, suitable for thermally demanding environments.
  • True Logic Level Gate: VGS(th) rating of greater than 0.5 V at 175 °C, facilitating easy control from logic circuits.
  • Repetitive Avalanche Rated: Enhanced ruggedness and reliability in applications subject to repetitive avalanche conditions.

Applications

  • Automotive Systems: Suitable for 12 V automotive systems, including motors, lighting, and solenoid control.
  • Start-Stop Micro-Hybrid Applications: Ideal for the efficient management of power in start-stop systems.
  • Transmission Control: Used in transmission control systems due to its high performance and reliability.
  • Ultra High Performance Power Switching: Applicable in various high-performance power switching applications.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BUK9Y3R0-40E?

    The maximum drain-source voltage (VDS) is 40 V.

  2. What is the on-resistance (RDSon) at VGS = 5 V?

    The on-resistance (RDSon) at VGS = 5 V is 3.0 mΩ.

  3. Is the BUK9Y3R0-40E AEC-Q101 compliant?

    Yes, the BUK9Y3R0-40E is AEC-Q101 compliant.

  4. What is the maximum junction temperature (Tj) of the BUK9Y3R0-40E?

    The maximum junction temperature (Tj) is 175 °C.

  5. What is the typical gate-source threshold voltage (VGSth)?

    The typical gate-source threshold voltage (VGSth) is 1.7 V.

  6. What are some common applications of the BUK9Y3R0-40E?

    Common applications include 12 V automotive systems, start-stop micro-hybrid applications, transmission control, and ultra high performance power switching.

  7. What package type is the BUK9Y3R0-40E available in?

    The BUK9Y3R0-40E is available in the LFPAK56 (Power SO8) package.

  8. Is the BUK9Y3R0-40E repetitive avalanche rated?

    Yes, the BUK9Y3R0-40E is repetitive avalanche rated.

  9. What is the maximum continuous drain current (ID)?

    The maximum continuous drain current (ID) is 100 A.

  10. What is the typical input capacitance (Ciss)?

    The typical input capacitance (Ciss) is 4471 pF.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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