BLF574XR112
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NXP USA Inc. BLF574XR112

Manufacturer No:
BLF574XR112
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
POWER LDMOS TRANSISTOR, SOT1214
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF574XR112 is a high-performance LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by NXP USA Inc., now part of Ampleon. This transistor is optimized for broadcast and industrial applications, operating in the frequency range from HF to 500 MHz. It is known for its exceptional ruggedness, high efficiency, and excellent thermal stability, making it suitable for demanding environments.

Key Specifications

Parameter Conditions Min Typ/Nom Max Unit
Frequency Range 5 MHz 500 MHz MHz
Nominal Output Power at 1 dB Gain Compression (P L(1dB)) 600 W W
Power Gain (G p) P L = 600 W; V DS = 50 V 24 dB dB
Drain Efficiency (η D) P L = 600 W; V DS = 50 V; f = 225 MHz; I Dq = 100 mA 74.7 % %
Supply Voltage (V DS) 50 V V
Drain Current (I Dq) 1000 mA mA
Package SOT1214A (SOT1214A)

Key Features

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness, capable of withstanding severe load mismatches
  • High efficiency, with a typical drain efficiency of 74.7% at 225 MHz
  • Excellent thermal stability
  • Designed for broadband operation from HF to 500 MHz
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Applications

  • Industrial, scientific, and medical (ISM) applications
  • Broadcast transmitter applications
  • Other high-power RF applications requiring robust and efficient performance

Q & A

  1. What is the BLF574XR112 used for?

    The BLF574XR112 is used in broadcast and industrial applications, particularly in the HF to 500 MHz frequency range.

  2. What is the nominal output power of the BLF574XR112?

    The nominal output power at 1 dB gain compression is 600 W.

  3. What is the typical power gain of the BLF574XR112?

    The typical power gain is 24 dB at P L = 600 W and V DS = 50 V.

  4. What is the drain efficiency of the BLF574XR112?

    The typical drain efficiency is 74.7% at 225 MHz with I Dq = 100 mA.

  5. What is the supply voltage for the BLF574XR112?

    The supply voltage (V DS) is 50 V.

  6. What package type does the BLF574XR112 use?

    The package type is SOT1214A.

  7. Is the BLF574XR112 rugged and reliable?

    Yes, it is known for its excellent ruggedness and ability to withstand severe load mismatches.

  8. Is the BLF574XR112 compliant with environmental regulations?

    Yes, it is compliant to Directive 2002/95/EC regarding Restriction of Hazardous Substances.

  9. What are the typical applications of the BLF574XR112?

    Typical applications include industrial, scientific, and medical (ISM) applications and broadcast transmitter applications.

  10. Where can I find detailed documentation for the BLF574XR112?

    Detailed documentation, including datasheets and application notes, can be found on the Ampleon website or through authorized distributors.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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In Stock

$177.58
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