BC856BM315
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NXP USA Inc. BC856BM315

Manufacturer No:
BC856BM315
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
60 V, 100MA PNP GENERAL PURPOSE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856BM315 is a 60 V, 100 mA PNP general-purpose transistor produced by NXP USA Inc. This component is part of Nexperia's extensive portfolio of bipolar transistors, which are widely used in various electronic designs across different industries. The BC856BM315 is known for its high reliability and performance in general-purpose switching and amplification applications.

Key Specifications

ParameterValue
Type NumberBC856BM
PackageDFN1006-3 (SOT883)
Channel TypePNP
Maximum Collector-Base Voltage (VCEO)60 V
Maximum Collector Current (IC)100 mA
Minimum Current Gain (hFE)220
Maximum Current Gain (hFE)475
Maximum Junction Temperature (TJ)150°C
Automotive QualifiedYes (AEC-Q101 qualified)

Key Features

  • Leadless Ultra Small Package: The BC856BM315 comes in a DFN1006-3 (SOT883) package, which is highly compact and suitable for space-constrained designs.
  • High Reliability: The transistor is AEC-Q101 qualified, ensuring it meets the stringent requirements for automotive applications.
  • Low Power Dissipation: Despite its small size, the transistor has power dissipation comparable to SOT23 packages.
  • General-Purpose Switching and Amplification: Suitable for a wide range of applications requiring general-purpose switching and amplification.

Applications

  • Automotive: Used in various automotive systems due to its AEC-Q101 qualification.
  • Industrial: Suitable for industrial control systems, automation, and other industrial applications.
  • Mobile Applications: Can be used in mobile devices for switching and amplification purposes.
  • Consumer Electronics: Applicable in consumer electronics for general-purpose switching and amplification needs.

Q & A

  1. What is the maximum collector-base voltage of the BC856BM315 transistor?
    The maximum collector-base voltage (VCEO) is 60 V.
  2. What is the package type of the BC856BM315 transistor?
    The package type is DFN1006-3 (SOT883).
  3. Is the BC856BM315 transistor AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified.
  4. What is the maximum collector current of the BC856BM315 transistor?
    The maximum collector current (IC) is 100 mA.
  5. What are the typical applications of the BC856BM315 transistor?
    It is used in automotive, industrial, mobile, and consumer electronics applications.
  6. What is the minimum current gain (hFE) of the BC856BM315 transistor?
    The minimum current gain (hFE) is 220.
  7. What is the maximum junction temperature of the BC856BM315 transistor?
    The maximum junction temperature (TJ) is 150°C.
  8. Does the BC856BM315 transistor have a leadless package?
    Yes, it has a leadless ultra small DFN1006-3 (SOT883) package.
  9. What is the power dissipation of the BC856BM315 transistor compared to other packages?
    The power dissipation is comparable to SOT23 packages.
  10. Is there an NPN complement for the BC856BM315 transistor?
    Yes, the NPN complement is the BC846BM.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number BC856BM315 BC856BMB315
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Transistor Type - -
Current - Collector (Ic) (Max) - -
Voltage - Collector Emitter Breakdown (Max) - -
Vce Saturation (Max) @ Ib, Ic - -
Current - Collector Cutoff (Max) - -
DC Current Gain (hFE) (Min) @ Ic, Vce - -
Power - Max - -
Frequency - Transition - -
Operating Temperature - -
Mounting Type - -
Package / Case - -
Supplier Device Package - -

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