BC847C/DG/B3215
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NXP USA Inc. BC847C/DG/B3215

Manufacturer No:
BC847C/DG/B3215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
TRANS NPN 45V 0.1A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847C/DG/B3215 is a general-purpose NPN bipolar transistor produced by NXP USA Inc. This transistor is part of the BC847 series, known for its versatility and reliability in various electronic applications. It is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for compact and efficient designs.

Key Specifications

Parameter Conditions Min Typ Max Unit
VCEO (Collector-Emitter Voltage) Open base - - 45 V
IC (Collector Current) - - - 100 mA
hFE (DC Current Gain) VCE = 5 V; IC = 2 mA 110 180-290-520 800 -
VCBO (Collector-Base Voltage) Open emitter - - 50 V
VEBO (Emitter-Base Voltage) Open collector - - 6 V
ICM (Peak Collector Current) Single pulse; tp ≤ 1 ms - - 200 mA
IBM (Peak Base Current) Single pulse; tp ≤ 1 ms - - 100 mA
Ptot (Total Power Dissipation) Tamb ≤ 25 °C - - 250 mW
Tj (Junction Temperature) - - - 150 °C
Tamb (Ambient Temperature) - -65 - 150 °C

Key Features

  • General-Purpose Transistor: Suitable for a wide range of applications including switching and amplification.
  • High Voltage and Current Ratings: Collector-emitter voltage (VCEO) of 45 V and collector current (IC) of 100 mA.
  • Compact Packaging: Available in SOT23 (TO-236AB) SMD plastic package, ideal for space-constrained designs.
  • Three Gain Selections: Available in different gain groups (A, B, C) to cater to various application requirements.
  • Wide Operating Temperature Range: Ambient temperature range from -65 °C to 150 °C.

Applications

  • Automotive Systems: Used in various automotive applications due to its robustness and reliability.
  • Industrial Control Systems: Suitable for industrial control circuits requiring high reliability and efficiency.
  • Consumer Electronics: Found in consumer electronics such as audio amplifiers, switching circuits, and general-purpose amplification.
  • Power and Computing Systems: Used in power management and computing systems where compact and efficient components are necessary.

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BC847C transistor?

    The collector-emitter voltage (VCEO) of the BC847C transistor is 45 V.

  2. What is the maximum collector current (IC) of the BC847C transistor?

    The maximum collector current (IC) of the BC847C transistor is 100 mA.

  3. What are the different gain groups available for the BC847C transistor?

    The BC847C transistor is available in three gain groups: A, B, and C.

  4. What is the package type of the BC847C transistor?

    The BC847C transistor is packaged in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  5. What is the operating temperature range of the BC847C transistor?

    The operating temperature range of the BC847C transistor is from -65 °C to 150 °C.

  6. What are some common applications of the BC847C transistor?

    The BC847C transistor is commonly used in automotive systems, industrial control systems, consumer electronics, and power and computing systems.

  7. What is the peak collector current (ICM) of the BC847C transistor?

    The peak collector current (ICM) of the BC847C transistor is 200 mA for a single pulse with tp ≤ 1 ms.

  8. What is the total power dissipation (Ptot) of the BC847C transistor?

    The total power dissipation (Ptot) of the BC847C transistor is 250 mW at an ambient temperature of 25 °C.

  9. Is the BC847C transistor RoHS compliant?

    Yes, the BC847C transistor is RoHS compliant.

  10. Where can I find detailed technical information for the BC847C transistor?

    Detailed technical information for the BC847C transistor can be found in the datasheet available from NXP Semiconductors or authorized distributors.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Similar Products

Part Number BC847C/DG/B3215 BC847C/DG/B2215 BC847C/DG/B3,215
Manufacturer NXP USA Inc. NXP USA Inc. Nexperia USA Inc.
Product Status Active Active Obsolete
Transistor Type NPN - NPN
Current - Collector (Ic) (Max) 100 mA - 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V - 45 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA - 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) - 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V - 420 @ 2mA, 5V
Power - Max 250 mW - 250 mW
Frequency - Transition 100MHz - 100MHz
Operating Temperature 150°C (TJ) - 150°C (TJ)
Mounting Type Surface Mount - Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 - TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB - TO-236AB

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