Overview
The BC847C/DG/B2215 is a 45 V, 100 mA NPN general-purpose transistor produced by NXP USA Inc. This transistor is designed for use in a variety of electronic applications, offering high reliability and performance in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. It is part of the BC847 series, known for its versatility and wide range of applications across different industries.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VCEO (Collector-Emitter Voltage) | Open base | - | - | 45 | V |
| IC (Collector Current) | - | - | - | 100 | mA |
| hFE (DC Current Gain) | VCE = 5 V; IC = 2 mA | 420 | 520 | 800 | - |
| VCEsat (Collector-Emitter Saturation Voltage) | IC = 100 mA; IB = 5 mA | - | - | 200 | mV |
| VBEsat (Base-Emitter Saturation Voltage) | IC = 10 mA; IB = 0.5 mA | - | - | 700 | mV |
| TJ (Junction Temperature) | - | - | - | 150 | °C |
Key Features
- High DC current gain (hFE) with three groups: A (110-220), B (200-450), and C (420-800).
- Low collector-emitter saturation voltage (VCEsat) and base-emitter saturation voltage (VBEsat).
- Compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, suitable for space-saving designs.
- Wide operating temperature range up to 150°C.
- RoHS compliant and suitable for reflow and wave soldering processes.
Applications
The BC847C/DG/B2215 transistor is versatile and can be used in a wide range of applications across various industries, including:
- Automotive systems for general-purpose switching and amplification.
- Industrial control systems for signal amplification and switching.
- Consumer electronics for audio and video circuits.
- Mobile and wearable devices where space and efficiency are critical.
- Power and computing systems requiring reliable and efficient transistor performance.
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the BC847C/DG/B2215 transistor?
The maximum collector-emitter voltage (VCEO) is 45 V. - What is the typical DC current gain (hFE) of the BC847C/DG/B2215 transistor?
The typical DC current gain (hFE) is 520 for group C at VCE = 5 V and IC = 2 mA. - What is the package type of the BC847C/DG/B2215 transistor?
The package type is SOT23 (TO-236AB). - What is the maximum junction temperature (TJ) for the BC847C/DG/B2215 transistor?
The maximum junction temperature (TJ) is 150°C. - Is the BC847C/DG/B2215 transistor RoHS compliant?
Yes, the BC847C/DG/B2215 transistor is RoHS compliant. - What are the typical applications of the BC847C/DG/B2215 transistor?
The transistor is used in automotive, industrial, consumer electronics, mobile, and power systems. - What is the collector-emitter saturation voltage (VCEsat) of the BC847C/DG/B2215 transistor?
The collector-emitter saturation voltage (VCEsat) is typically 200 mV at IC = 100 mA and IB = 5 mA). - How many leads does the SOT23 package of the BC847C/DG/B2215 transistor have?
The SOT23 package has 3 leads). - What is the base-emitter saturation voltage (VBEsat) of the BC847C/DG/B2215 transistor?
The base-emitter saturation voltage (VBEsat) is typically 700 mV at IC = 10 mA and IB = 0.5 mA). - Can the BC847C/DG/B2215 transistor be used in high-temperature environments?
Yes, it can operate up to a junction temperature of 150°C).
