BC847C/DG/B2215
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NXP USA Inc. BC847C/DG/B2215

Manufacturer No:
BC847C/DG/B2215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847C/DG/B2215 is a 45 V, 100 mA NPN general-purpose transistor produced by NXP USA Inc. This transistor is designed for use in a variety of electronic applications, offering high reliability and performance in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. It is part of the BC847 series, known for its versatility and wide range of applications across different industries.

Key Specifications

ParameterConditionsMinTypMaxUnit
VCEO (Collector-Emitter Voltage)Open base--45V
IC (Collector Current)---100mA
hFE (DC Current Gain)VCE = 5 V; IC = 2 mA420520800-
VCEsat (Collector-Emitter Saturation Voltage)IC = 100 mA; IB = 5 mA--200mV
VBEsat (Base-Emitter Saturation Voltage)IC = 10 mA; IB = 0.5 mA--700mV
TJ (Junction Temperature)---150°C

Key Features

  • High DC current gain (hFE) with three groups: A (110-220), B (200-450), and C (420-800).
  • Low collector-emitter saturation voltage (VCEsat) and base-emitter saturation voltage (VBEsat).
  • Compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, suitable for space-saving designs.
  • Wide operating temperature range up to 150°C.
  • RoHS compliant and suitable for reflow and wave soldering processes.

Applications

The BC847C/DG/B2215 transistor is versatile and can be used in a wide range of applications across various industries, including:

  • Automotive systems for general-purpose switching and amplification.
  • Industrial control systems for signal amplification and switching.
  • Consumer electronics for audio and video circuits.
  • Mobile and wearable devices where space and efficiency are critical.
  • Power and computing systems requiring reliable and efficient transistor performance.

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the BC847C/DG/B2215 transistor?
    The maximum collector-emitter voltage (VCEO) is 45 V.
  2. What is the typical DC current gain (hFE) of the BC847C/DG/B2215 transistor?
    The typical DC current gain (hFE) is 520 for group C at VCE = 5 V and IC = 2 mA.
  3. What is the package type of the BC847C/DG/B2215 transistor?
    The package type is SOT23 (TO-236AB).
  4. What is the maximum junction temperature (TJ) for the BC847C/DG/B2215 transistor?
    The maximum junction temperature (TJ) is 150°C.
  5. Is the BC847C/DG/B2215 transistor RoHS compliant?
    Yes, the BC847C/DG/B2215 transistor is RoHS compliant.
  6. What are the typical applications of the BC847C/DG/B2215 transistor?
    The transistor is used in automotive, industrial, consumer electronics, mobile, and power systems.
  7. What is the collector-emitter saturation voltage (VCEsat) of the BC847C/DG/B2215 transistor?
    The collector-emitter saturation voltage (VCEsat) is typically 200 mV at IC = 100 mA and IB = 5 mA).
  8. How many leads does the SOT23 package of the BC847C/DG/B2215 transistor have?
    The SOT23 package has 3 leads).
  9. What is the base-emitter saturation voltage (VBEsat) of the BC847C/DG/B2215 transistor?
    The base-emitter saturation voltage (VBEsat) is typically 700 mV at IC = 10 mA and IB = 0.5 mA).
  10. Can the BC847C/DG/B2215 transistor be used in high-temperature environments?
    Yes, it can operate up to a junction temperature of 150°C).

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number BC847C/DG/B2215 BC847C/DG/B3215
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Transistor Type - NPN
Current - Collector (Ic) (Max) - 100 mA
Voltage - Collector Emitter Breakdown (Max) - 45 V
Vce Saturation (Max) @ Ib, Ic - 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) - 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce - 420 @ 2mA, 5V
Power - Max - 250 mW
Frequency - Transition - 100MHz
Operating Temperature - 150°C (TJ)
Mounting Type - Surface Mount
Package / Case - TO-236-3, SC-59, SOT-23-3
Supplier Device Package - TO-236AB

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