AFT09S282NR3
  • Share:

NXP USA Inc. AFT09S282NR3

Manufacturer No:
AFT09S282NR3
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
FET RF 70V 960MHZ OM-780-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The AFT09S282NR3 is an 80-watt RF power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor manufactured by NXP USA Inc. Although this component is currently obsolete and no longer in production, it was designed to serve specific high-power RF applications. The transistor is part of NXP's portfolio of RF power devices, known for their high reliability and performance in demanding environments.

Key Specifications

ParameterValue
Power Output80 Watts
Frequency Range720 to 960 MHz
Device TypeLDMOS Transistor
Package TypeNot specified (refer to datasheet for details)
StatusObsolete

Key Features

  • High power output of 80 watts, making it suitable for high-power RF applications.
  • Operates within the frequency range of 720 to 960 MHz, which is ideal for cellular base station applications.
  • LDMOS technology provides high efficiency and reliability.
  • Designed for use in demanding RF environments.

Applications

The AFT09S282NR3 is primarily designed for cellular base station applications. Its high power output and specific frequency range make it suitable for use in wireless communication systems, particularly in the GSM and UMTS frequency bands.

Q & A

  1. What is the power output of the AFT09S282NR3? The power output of the AFT09S282NR3 is 80 watts.
  2. What is the frequency range of the AFT09S282NR3? The frequency range is 720 to 960 MHz.
  3. What type of device is the AFT09S282NR3? It is an LDMOS transistor.
  4. Is the AFT09S282NR3 still in production? No, the AFT09S282NR3 is obsolete and no longer manufactured.
  5. What are the primary applications of the AFT09S282NR3? It is primarily used in cellular base station applications.
  6. Why is LDMOS technology used in the AFT09S282NR3? LDMOS technology is used for its high efficiency and reliability in high-power RF applications.
  7. Where can I find substitutes for the AFT09S282NR3? You can find substitutes on websites like Digi-Key, Mouser, or through other electronic component distributors.
  8. What is the significance of the frequency range 720 to 960 MHz? This frequency range is significant for GSM and UMTS cellular base station applications.
  9. Can I still purchase the AFT09S282NR3? Although it is obsolete, you may still find it through some distributors or secondary markets, but availability is limited.
  10. Where can I find detailed specifications of the AFT09S282NR3? Detailed specifications can be found in the datasheet available on NXP's official website or through other reliable electronic component distributors.

Product Attributes

Transistor Type:LDMOS
Frequency:960MHz
Gain:20dB
Voltage - Test:28 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:1.4 A
Power - Output:80W
Voltage - Rated:70 V
Package / Case:OM-780-2
Supplier Device Package:OM-780-2
0 Remaining View Similar

In Stock

$209.24
5

Please send RFQ , we will respond immediately.

Related Product By Categories

BLF647P,112
BLF647P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121A
BLF888A,112
BLF888A,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539A
BLF884P,112
BLF884P,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT1121A
PD55003TR-E
PD55003TR-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
MRF101AN-START
MRF101AN-START
NXP USA Inc.
MRF101AN RF ESSENTIALS COMPONENT
SD2941-10W
SD2941-10W
STMicroelectronics
IC TRANS RF HF/VHF/UHF M174
BLF8G10LS-160,112
BLF8G10LS-160,112
NXP USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
BLF888,112
BLF888,112
Ampleon USA Inc.
RF FET LDMOS 104V 19DB SOT979A
BLF878,112
BLF878,112
Ampleon USA Inc.
RF FET LDMOS 89V 21DB SOT979A
BLF6G22-45,135
BLF6G22-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT608A
PD54003L-E
PD54003L-E
STMicroelectronics
TRANSISTOR RF 5X5 POWERFLAT
NE5550279A-T1-A
NE5550279A-T1-A
CEL
FET RF 30V 900MHZ 79A

Related Product By Brand

LPC1114FHN33/202,5
LPC1114FHN33/202,5
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 32HVQFN
LS1043AXE8QQB
LS1043AXE8QQB
NXP USA Inc.
QORIQ 4XCPU 64-BIT ARM ARCH 1.
MCIMX6U6AVM08ADR
MCIMX6U6AVM08ADR
NXP USA Inc.
I.MX6 ROM PERF ENHAN
TDA7052BT/N1,112
TDA7052BT/N1,112
NXP USA Inc.
IC AMP CLASS AB MONO 550MW 8SO
74HC32PW/AUJ
74HC32PW/AUJ
NXP USA Inc.
IC GATE OR 4CH 2-INP 14TSSOP
MMPF0100F1AEPR2
MMPF0100F1AEPR2
NXP USA Inc.
IC REG CONV I.MX6 12OUT 56HVQFN
MMPF0200NPAZES
MMPF0200NPAZES
NXP USA Inc.
IC REG CONV I.MX6 11OUT 56QFN
MC34716EP
MC34716EP
NXP USA Inc.
IC REG CONV DDR 2OUT 26QFN
SPC5607BF1MLU6557
SPC5607BF1MLU6557
NXP USA Inc.
MICROCONTROLLER 32-BIT, POWER AR
BGU7258X
BGU7258X
NXP USA Inc.
IC RF AMP ISM 5GHZ-6GHZ 6HXSON
MPX53GP
MPX53GP
NXP USA Inc.
SENSOR GAUGE PRESSURE 7 PSI MAX
MPXHZ6115AC6T1
MPXHZ6115AC6T1
NXP USA Inc.
SENSOR ABS PRESS 16.7PSI MAX