AFT05MP075NR1
  • Share:

NXP USA Inc. AFT05MP075NR1

Manufacturer No:
AFT05MP075NR1
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
FET RF 2CH 40V 520MHZ TO270-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The AFT05MP075NR1 is a high-ruggedness N-channel enhancement-mode lateral MOSFET designed by NXP USA Inc. for mobile two-way radio applications. This RF power transistor operates across a broad frequency range of 136 to 520 MHz, making it ideal for large-signal, common source amplifier applications in mobile radio equipment. The device is characterized by its high gain, ruggedness, and broadband performance, ensuring reliable operation in various radio frequency environments.

Key Specifications

Characteristic Symbol Value Unit
Frequency Range - 136 to 520 MHz -
Output Power (Typical) Pout 70 W W
Operating Voltage VDD 12.5 V V
Drain-Source Voltage VDS -0.5 to +40 Vdc V
Gate-Source Voltage VGS -6.0 to +12 Vdc V
Forward Transconductance (Typical) gfs 7.3 S S
Efficiency (Typical at 136 MHz) ηD 68.0 % %
Gain (Typical at 136 MHz) Gps 21.0 dB dB

Key Features

  • Characterized for operation from 136 to 520 MHz, allowing wide frequency range utilization.
  • Unmatched input and output, enabling broadband performance.
  • High ruggedness and stability enhancements.
  • Integrated ESD protection.
  • Exceptional thermal performance.
  • High linearity suitable for TETRA, SSB, and LTE applications.
  • Available in TO-270WB-4 and TO-270WBG-4 packages.

Applications

  • Mobile two-way radio equipment.
  • Output stages in VHF and UHF band mobile radios.
  • Large-signal, common source amplifier applications.
  • TETRA, SSB, and LTE radio systems.

Q & A

  1. What is the frequency range of the AFT05MP075NR1?

    The AFT05MP075NR1 operates from 136 to 520 MHz.

  2. What is the typical output power of the AFT05MP075NR1?

    The typical output power is 70 W.

  3. What is the operating voltage of the AFT05MP075NR1?

    The operating voltage is 12.5 V.

  4. What are the key features of the AFT05MP075NR1?

    The key features include high ruggedness, integrated ESD protection, exceptional thermal performance, and high linearity.

  5. What are the typical applications of the AFT05MP075NR1?

    Typical applications include mobile two-way radio equipment, output stages in VHF and UHF band mobile radios, and large-signal amplifier applications.

  6. What is the package type of the AFT05MP075NR1?

    The device is available in TO-270WB-4 and TO-270WBG-4 packages.

  7. What is the forward transconductance of the AFT05MP075NR1?

    The typical forward transconductance is 7.3 S.

  8. How efficient is the AFT05MP075NR1 at 136 MHz?

    The efficiency at 136 MHz is typically 68.0 %.

  9. What is the gain of the AFT05MP075NR1 at 136 MHz?

    The gain at 136 MHz is typically 21.0 dB.

  10. Does the AFT05MP075NR1 have integrated ESD protection?

    Yes, the AFT05MP075NR1 has integrated ESD protection.

Product Attributes

Transistor Type:LDMOS (Dual)
Frequency:520MHz
Gain:18.5dB
Voltage - Test:12.5 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:400 mA
Power - Output:70W
Voltage - Rated:40 V
Package / Case:TO-270AB
Supplier Device Package:TO-270 WB-4
0 Remaining View Similar

In Stock

$20.91
42

Please send RFQ , we will respond immediately.

Same Series
RJSSE558202T
RJSSE558202T
CONN MOD JACK 8P8C R/A SHLD
AFT05MP075GNR1
AFT05MP075GNR1
FET RF 2CH 40V 520MHZ TO270-4

Similar Products

Part Number AFT05MP075NR1 AFT05MP075GNR1
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Transistor Type LDMOS (Dual) LDMOS (Dual)
Frequency 520MHz 520MHz
Gain 18.5dB 18.5dB
Voltage - Test 12.5 V 12.5 V
Current Rating (Amps) - -
Noise Figure - -
Current - Test 400 mA 400 mA
Power - Output 70W 70W
Voltage - Rated 40 V 40 V
Package / Case TO-270AB TO-270BB
Supplier Device Package TO-270 WB-4 TO-270 WB-4 Gull

Related Product By Categories

MRF300AN
MRF300AN
NXP USA Inc.
RF MOSFET LDMOS 50V TO247
AFT27S010NT1
AFT27S010NT1
NXP USA Inc.
FET RF NCH 65V 2700MHZ PLD1.5W
BLF278C
BLF278C
Rochester Electronics, LLC
BLF278C - DUAL PUSH-PULL N-CHANN
PD55025S-E
PD55025S-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO10
PD54008L-E
PD54008L-E
STMicroelectronics
TRANSISTOR RF 5X5 POWERFLAT
SD3931-10
SD3931-10
STMicroelectronics
IC RF PWR TRANS HF/VHF/UHF M174
BF909A,215
BF909A,215
NXP USA Inc.
MOSFET N-CH SOT-143B
BF909,215
BF909,215
NXP USA Inc.
MOSFET N-CH 7V 40MA SOT143
BF1212,215
BF1212,215
NXP USA Inc.
MOSFET N-CH DUAL GATE 6V SOT143B
BLF6G38-25,112
BLF6G38-25,112
Ampleon USA Inc.
RF FET LDMOS 65V 15DB SOT608A
MMBFJ309
MMBFJ309
onsemi
RF MOSFET N-CH JFET 10V SOT23-3
NE5550279A-T1-A
NE5550279A-T1-A
CEL
FET RF 30V 900MHZ 79A

Related Product By Brand

PMEG45U10EPD146
PMEG45U10EPD146
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BC807-40QA,147
BC807-40QA,147
NXP USA Inc.
NOW NEXPERIA BC807-40 - SMALL SI
BC817-25/DG215
BC817-25/DG215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BCP53-10T115
BCP53-10T115
NXP USA Inc.
TRANS PNP 80V 1A SOT223
BF909A,215
BF909A,215
NXP USA Inc.
MOSFET N-CH SOT-143B
PMR290UNE,115
PMR290UNE,115
NXP USA Inc.
MOSFET N-CH 20V 700MA SC75
74HCT4851PW/S400118
74HCT4851PW/S400118
NXP USA Inc.
SINGLE-ENDED MUX, 8 CHANNEL
74HC32PW/AUJ
74HC32PW/AUJ
NXP USA Inc.
IC GATE OR 4CH 2-INP 14TSSOP
BZV55-C20135
BZV55-C20135
NXP USA Inc.
NOW NEXPERIA BZV55-C20 - ZENER D
SA614AD,602
SA614AD,602
NXP USA Inc.
IC FM IF SYSTEM LOW PWR 16-SOIC
PCF7900VHN/C0L,118
PCF7900VHN/C0L,118
NXP USA Inc.
RF TX IC UHF 315/434MHZ 16VFQFN
LM75ADP/DG,118
LM75ADP/DG,118
NXP USA Inc.
SENSOR DIGITAL -55C-125C 8TSSOP